Fast Page DRAM, 256KX4, 70ns, CMOS, PZIP20
| 参数名称 | 属性值 |
| 厂商名称 | SIEMENS |
| 包装说明 | , |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 访问模式 | FAST PAGE |
| 最长访问时间 | 70 ns |
| 其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH |
| JESD-30 代码 | R-PZIP-T20 |
| 内存密度 | 1048576 bit |
| 内存集成电路类型 | FAST PAGE DRAM |
| 内存宽度 | 4 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 20 |
| 字数 | 262144 words |
| 字数代码 | 256000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 256KX4 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 认证状态 | Not Qualified |
| 刷新周期 | 512 |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | ZIG-ZAG |
| HYB514256BZL-70 | HYB514256BZ-60 | HYB514256BZ-70 | HYB514256BZL-60 | HYB514256B-80 | HYB514256BJ-80 | HYB514256BZ-80 | |
|---|---|---|---|---|---|---|---|
| 描述 | Fast Page DRAM, 256KX4, 70ns, CMOS, PZIP20 | Fast Page DRAM, 256KX4, 60ns, CMOS, PZIP20 | Fast Page DRAM, 256KX4, 70ns, CMOS, PZIP20 | Fast Page DRAM, 256KX4, 60ns, CMOS, PZIP20 | Fast Page DRAM, 256KX4, 80ns, CMOS, PDIP20 | Fast Page DRAM, 256KX4, 80ns, CMOS, PDSO20 | Fast Page DRAM, 256KX4, 80ns, CMOS, PZIP20 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | FAST PAGE | FAST PAGE | FAST PAGE | FAST PAGE | FAST PAGE | FAST PAGE | FAST PAGE |
| 最长访问时间 | 70 ns | 60 ns | 70 ns | 60 ns | 80 ns | 80 ns | 80 ns |
| 其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD-30 代码 | R-PZIP-T20 | R-PZIP-T20 | R-PZIP-T20 | R-PZIP-T20 | R-PDIP-T20 | R-PDSO-J20 | R-PZIP-T20 |
| 内存密度 | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit |
| 内存集成电路类型 | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM |
| 内存宽度 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 20 | 20 | 20 | 20 | 20 | 20 | 20 |
| 字数 | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words |
| 字数代码 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 256KX4 | 256KX4 | 256KX4 | 256KX4 | 256KX4 | 256KX4 | 256KX4 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | SMALL OUTLINE | IN-LINE |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 512 | 512 | 512 | 512 | 512 | 512 | 512 |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO | YES | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | J BEND | THROUGH-HOLE |
| 端子位置 | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | DUAL | DUAL | ZIG-ZAG |
| 厂商名称 | SIEMENS | - | SIEMENS | SIEMENS | SIEMENS | SIEMENS | SIEMENS |
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