Page Mode DRAM, 64KX1, 120ns, MOS, CQCC18
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | FUJITSU(富士通) |
| 包装说明 | QCCN, LCC18,.3X.43 |
| Reach Compliance Code | unknown |
| 最长访问时间 | 120 ns |
| I/O 类型 | SEPARATE |
| JESD-30 代码 | R-XQCC-N18 |
| JESD-609代码 | e0 |
| 内存密度 | 65536 bit |
| 内存集成电路类型 | PAGE MODE DRAM |
| 内存宽度 | 1 |
| 端子数量 | 18 |
| 字数 | 65536 words |
| 字数代码 | 64000 |
| 最高工作温度 | 110 °C |
| 最低工作温度 | -55 °C |
| 组织 | 64KX1 |
| 输出特性 | 3-STATE |
| 封装主体材料 | CERAMIC |
| 封装代码 | QCCN |
| 封装等效代码 | LCC18,.3X.43 |
| 封装形状 | RECTANGULAR |
| 封装形式 | CHIP CARRIER |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 刷新周期 | 128 |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | MOS |
| 温度等级 | OTHER |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | NO LEAD |
| 端子节距 | 1.27 mm |
| 端子位置 | QUAD |
| MB8264A-12WTV | MB8264A-12M | MB8264A-10M | MB8264A-10CV | MB8264A-12WC | MB8264A-12WCV | MB8264A-15WTV | MB8264A-15M | MB8264A-15WCV | MB8264A-15WC | |
|---|---|---|---|---|---|---|---|---|---|---|
| 描述 | Page Mode DRAM, 64KX1, 120ns, MOS, CQCC18 | IC,DRAM,PAGE MODE,64KX1,MOS,DIP,16PIN,PLASTIC | IC,DRAM,PAGE MODE,64KX1,MOS,DIP,16PIN,PLASTIC | Page Mode DRAM, 64KX1, 100ns, MOS, CQCC18 | IC,DRAM,PAGE MODE,64KX1,MOS,DIP,16PIN,CERAMIC | Page Mode DRAM, 64KX1, 120ns, MOS, CQCC18 | Page Mode DRAM, 64KX1, 150ns, MOS, CQCC18 | Page Mode DRAM, 64KX1, 150ns, MOS, PDIP16 | Page Mode DRAM, 64KX1, 150ns, MOS, CQCC18 | IC,DRAM,PAGE MODE,64KX1,MOS,DIP,16PIN,CERAMIC |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 包装说明 | QCCN, LCC18,.3X.43 | DIP, DIP16,.3 | DIP, DIP16,.3 | QCCN, LCC18,.3X.43 | DIP, DIP16,.3 | QCCN, LCC18,.3X.43 | QCCN, LCC18,.3X.43 | DIP, DIP16,.3 | QCCN, LCC18,.3X.43 | DIP, DIP16,.3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | compliant | unknown | unknown | unknown | unknown | compliant |
| 最长访问时间 | 120 ns | 120 ns | 100 ns | 100 ns | 120 ns | 120 ns | 150 ns | 150 ns | 150 ns | 150 ns |
| I/O 类型 | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE |
| JESD-30 代码 | R-XQCC-N18 | R-PDIP-T16 | R-PDIP-T16 | R-XQCC-N18 | R-XDIP-T16 | R-XQCC-N18 | R-XQCC-N18 | R-PDIP-T16 | R-XQCC-N18 | R-XDIP-T16 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
| 内存集成电路类型 | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM |
| 内存宽度 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 18 | 16 | 16 | 18 | 16 | 18 | 18 | 16 | 18 | 16 |
| 字数 | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words |
| 字数代码 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 |
| 最高工作温度 | 110 °C | 70 °C | 70 °C | 70 °C | 110 °C | 110 °C | 110 °C | 70 °C | 110 °C | 110 °C |
| 最低工作温度 | -55 °C | - | - | - | -55 °C | -55 °C | -55 °C | - | -55 °C | -55 °C |
| 组织 | 64KX1 | 64KX1 | 64KX1 | 64KX1 | 64KX1 | 64KX1 | 64KX1 | 64KX1 | 64KX1 | 64KX1 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | CERAMIC | PLASTIC/EPOXY | PLASTIC/EPOXY | CERAMIC | CERAMIC | CERAMIC | CERAMIC | PLASTIC/EPOXY | CERAMIC | CERAMIC |
| 封装代码 | QCCN | DIP | DIP | QCCN | DIP | QCCN | QCCN | DIP | QCCN | DIP |
| 封装等效代码 | LCC18,.3X.43 | DIP16,.3 | DIP16,.3 | LCC18,.3X.43 | DIP16,.3 | LCC18,.3X.43 | LCC18,.3X.43 | DIP16,.3 | LCC18,.3X.43 | DIP16,.3 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | CHIP CARRIER | IN-LINE | IN-LINE | CHIP CARRIER | IN-LINE | CHIP CARRIER | CHIP CARRIER | IN-LINE | CHIP CARRIER | IN-LINE |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 128 | 128 | 128 | 128 | 128 | 128 | 128 | 128 | 128 | 128 |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | NO | NO | YES | NO | YES | YES | NO | YES | NO |
| 技术 | MOS | MOS | MOS | MOS | MOS | MOS | MOS | MOS | MOS | MOS |
| 温度等级 | OTHER | COMMERCIAL | COMMERCIAL | COMMERCIAL | OTHER | OTHER | OTHER | COMMERCIAL | OTHER | OTHER |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | NO LEAD | THROUGH-HOLE | THROUGH-HOLE | NO LEAD | THROUGH-HOLE | NO LEAD | NO LEAD | THROUGH-HOLE | NO LEAD | THROUGH-HOLE |
| 端子节距 | 1.27 mm | 2.54 mm | 2.54 mm | 1.27 mm | 2.54 mm | 1.27 mm | 1.27 mm | 2.54 mm | 1.27 mm | 2.54 mm |
| 端子位置 | QUAD | DUAL | DUAL | QUAD | DUAL | QUAD | QUAD | DUAL | QUAD | DUAL |
| 厂商名称 | FUJITSU(富士通) | - | - | FUJITSU(富士通) | - | FUJITSU(富士通) | FUJITSU(富士通) | FUJITSU(富士通) | FUJITSU(富士通) | - |
| 电源 | 5 V | 5 V | - | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
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