DDR DRAM, 256MX4, 0.3ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78
参数名称 | 属性值 |
是否无铅 | 不含铅 |
是否Rohs认证 | 符合 |
厂商名称 | SAMSUNG(三星) |
零件包装代码 | BGA |
包装说明 | TFBGA, BGA78,9X13,32 |
针数 | 78 |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
访问模式 | MULTI BANK PAGE BURST |
最长访问时间 | 0.3 ns |
其他特性 | AUTO/SELF REFRESH |
最大时钟频率 (fCLK) | 533 MHz |
I/O 类型 | COMMON |
交错的突发长度 | 4,8 |
JESD-30 代码 | R-PBGA-B78 |
长度 | 11 mm |
内存密度 | 1073741824 bit |
内存集成电路类型 | DDR DRAM |
内存宽度 | 4 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 78 |
字数 | 268435456 words |
字数代码 | 256000000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 85 °C |
最低工作温度 | |
组织 | 256MX4 |
输出特性 | 3-STATE |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | TFBGA |
封装等效代码 | BGA78,9X13,32 |
封装形状 | RECTANGULAR |
封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH |
峰值回流温度(摄氏度) | NOT SPECIFIED |
电源 | 1.5 V |
认证状态 | Not Qualified |
刷新周期 | 8192 |
座面最大高度 | 1.2 mm |
自我刷新 | YES |
连续突发长度 | 4,8 |
最大压摆率 | 0.1 mA |
最大供电电压 (Vsup) | 1.575 V |
最小供电电压 (Vsup) | 1.425 V |
标称供电电压 (Vsup) | 1.5 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | OTHER |
端子形式 | BALL |
端子节距 | 0.8 mm |
端子位置 | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
宽度 | 7.5 mm |
K4B1G0446G-BCF80 | K4B1G0846G-BCH90 | K4B1G0846G-BCH9000 | K4B1G0846G-BCK00 | K4B1G0446G-BCMA0 | K4B1G0446G-BCH90 | K4B1G0446G-BCK00 | K4B1G0846G-BCF80 | K4B1G0846G-BCMA0 | |
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描述 | DDR DRAM, 256MX4, 0.3ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | DDR DRAM, 128MX8, 0.255ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | DDR DRAM, 128MX8, 0.255ns, CMOS, PBGA78 | DDR DRAM, 128MX8, 0.225ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | DDR DRAM, 256MX4, 0.195ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | DDR DRAM, 256MX4, 0.255ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | DDR DRAM, 256MX4, 0.225ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | DDR DRAM, 128MX8, 0.3ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | DDR DRAM, 128MX8, 0.195ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
厂商名称 | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |
包装说明 | TFBGA, BGA78,9X13,32 | TFBGA, BGA78,9X13,32 | FBGA, BGA78,9X13,32 | TFBGA, BGA78,9X13,32 | TFBGA, BGA78,9X13,32 | TFBGA, BGA78,9X13,32 | TFBGA, BGA78,9X13,32 | TFBGA, BGA78,9X13,32 | TFBGA, BGA78,9X13,32 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compli |
最长访问时间 | 0.3 ns | 0.255 ns | 0.255 ns | 0.225 ns | 0.195 ns | 0.255 ns | 0.225 ns | 0.3 ns | 0.195 ns |
最大时钟频率 (fCLK) | 533 MHz | 667 MHz | 667 MHz | 800 MHz | 933 MHz | 667 MHz | 800 MHz | 533 MHz | 933 MHz |
I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
交错的突发长度 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 |
JESD-30 代码 | R-PBGA-B78 | R-PBGA-B78 | R-PBGA-B78 | R-PBGA-B78 | R-PBGA-B78 | R-PBGA-B78 | R-PBGA-B78 | R-PBGA-B78 | R-PBGA-B78 |
内存密度 | 1073741824 bit | 1073741824 bit | 1073741824 bit | 1073741824 bit | 1073741824 bit | 1073741824 bit | 1073741824 bit | 1073741824 bit | 1073741824 bi |
内存集成电路类型 | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
内存宽度 | 4 | 8 | 8 | 8 | 4 | 4 | 4 | 8 | 8 |
端子数量 | 78 | 78 | 78 | 78 | 78 | 78 | 78 | 78 | 78 |
字数 | 268435456 words | 134217728 words | 134217728 words | 134217728 words | 268435456 words | 268435456 words | 268435456 words | 134217728 words | 134217728 words |
字数代码 | 256000000 | 128000000 | 128000000 | 128000000 | 256000000 | 256000000 | 256000000 | 128000000 | 128000000 |
组织 | 256MX4 | 128MX8 | 128MX8 | 128MX8 | 256MX4 | 256MX4 | 256MX4 | 128MX8 | 128MX8 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | TFBGA | TFBGA | FBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA |
封装等效代码 | BGA78,9X13,32 | BGA78,9X13,32 | BGA78,9X13,32 | BGA78,9X13,32 | BGA78,9X13,32 | BGA78,9X13,32 | BGA78,9X13,32 | BGA78,9X13,32 | BGA78,9X13,32 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH |
电源 | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
刷新周期 | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 |
连续突发长度 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 |
最大压摆率 | 0.1 mA | 0.13 mA | 0.13 mA | 0.135 mA | 0.135 mA | 0.125 mA | 0.128 mA | 0.105 mA | 0.14 mA |
标称供电电压 (Vsup) | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V |
表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
端子形式 | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
是否无铅 | 不含铅 | 不含铅 | - | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 |
零件包装代码 | BGA | BGA | - | BGA | BGA | BGA | BGA | BGA | BGA |
针数 | 78 | 78 | - | 78 | 78 | 78 | 78 | 78 | 78 |
ECCN代码 | EAR99 | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
访问模式 | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | - | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST |
其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | - | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
长度 | 11 mm | 11 mm | - | 11 mm | 11 mm | 11 mm | 11 mm | 11 mm | 11 mm |
功能数量 | 1 | 1 | - | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | - | 1 | 1 | 1 | 1 | 1 | 1 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | - | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 85 °C | 85 °C | - | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
座面最大高度 | 1.2 mm | 1.2 mm | - | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
自我刷新 | YES | YES | - | YES | YES | YES | YES | YES | YES |
最大供电电压 (Vsup) | 1.575 V | 1.575 V | - | 1.575 V | 1.575 V | 1.575 V | 1.575 V | 1.575 V | 1.575 V |
最小供电电压 (Vsup) | 1.425 V | 1.425 V | - | 1.425 V | 1.425 V | 1.425 V | 1.425 V | 1.425 V | 1.425 V |
温度等级 | OTHER | OTHER | - | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
宽度 | 7.5 mm | 7.5 mm | - | 7.5 mm | 7.5 mm | 7.5 mm | 7.5 mm | 7.5 mm | 7.5 mm |
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