Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel,
参数名称 | 属性值 |
包装说明 | FLANGE MOUNT, R-XUFM-X7 |
Reach Compliance Code | unknow |
其他特性 | HIGH SPEED SWITCHING |
最大集电极电流 (IC) | 400 A |
集电极-发射极最大电压 | 600 V |
配置 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT |
JESD-30 代码 | R-XUFM-X7 |
元件数量 | 2 |
端子数量 | 7 |
封装主体材料 | UNSPECIFIED |
封装形状 | RECTANGULAR |
封装形式 | FLANGE MOUNT |
极性/信道类型 | N-CHANNEL |
认证状态 | Not Qualified |
表面贴装 | NO |
端子形式 | UNSPECIFIED |
端子位置 | UPPER |
晶体管应用 | POWER CONTROL |
晶体管元件材料 | SILICON |
标称断开时间 (toff) | 800 ns |
标称接通时间 (ton) | 800 ns |
Base Number Matches | 1 |
2MBI400N-060-01F | 2MBI400N-060-01A | 2MBI400N-060-01D | 2MBI400N-060-01B | 2MBI400N-060-01C | |
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描述 | Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, | Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, | Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, MODULE-7 | Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, | Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, |
包装说明 | FLANGE MOUNT, R-XUFM-X7 | FLANGE MOUNT, R-XUFM-X7 | FLANGE MOUNT, R-XUFM-X7 | FLANGE MOUNT, R-XUFM-X7 | FLANGE MOUNT, R-XUFM-X7 |
Reach Compliance Code | unknow | unknow | unknow | unknow | unknow |
最大集电极电流 (IC) | 400 A | 400 A | 400 A | 400 A | 400 A |
集电极-发射极最大电压 | 600 V | 600 V | 600 V | 600 V | 600 V |
配置 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT |
JESD-30 代码 | R-XUFM-X7 | R-XUFM-X7 | R-XUFM-X7 | R-XUFM-X7 | R-XUFM-X7 |
元件数量 | 2 | 2 | 2 | 2 | 2 |
端子数量 | 7 | 7 | 7 | 7 | 7 |
封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO | NO |
端子形式 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
端子位置 | UPPER | UPPER | UPPER | UPPER | UPPER |
晶体管应用 | POWER CONTROL | POWER CONTROL | POWER CONTROL | POWER CONTROL | POWER CONTROL |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
标称断开时间 (toff) | 800 ns | 800 ns | 600 ns | 800 ns | 800 ns |
标称接通时间 (ton) | 800 ns | 800 ns | 600 ns | 800 ns | 800 ns |
Base Number Matches | 1 | 1 | 1 | 1 | 1 |
其他特性 | HIGH SPEED SWITCHING | HIGH SPEED SWITCHING | - | HIGH SPEED SWITCHING | HIGH SPEED SWITCHING |
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