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A3P250-1QN132YC

产品描述Field Programmable Gate Array
产品类别可编程逻辑器件    可编程逻辑   
文件大小11MB,共226页
制造商Microsemi
官网地址https://www.microsemi.com
下载文档 详细参数 选型对比 全文预览

A3P250-1QN132YC概述

Field Programmable Gate Array

A3P250-1QN132YC规格参数

参数名称属性值
厂商名称Microsemi
Reach Compliance Codeunknown
可编程逻辑类型FIELD PROGRAMMABLE GATE ARRAY

文档预览

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Revision 12
ProASIC3 Flash Family FPGAs
with Optional Soft ARM Support
Features and Benefits
High Capacity
• 15 k to 1 M System Gates
• Up to 144 kbits of True Dual-Port SRAM
• Up to 300 User I/Os
Advanced I/O
• 700 Mbps DDR, LVDS-Capable I/Os (A3P250 and above)
• 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation
• Wide Range Power Supply Voltage Support per JESD8-B,
Allowing I/Os to Operate from 2.7 V to 3.6 V
• Bank-Selectable I/O Voltages—up to 4 Banks per Chip
• Single-Ended I/O Standards: LVTTL, LVCMOS 3.3 V /
2.5 V / 1.8 V / 1.5 V, 3.3 V PCI / 3.3 V PCI-X
and LVCMOS
2.5 V / 5.0 V Input
• Differential I/O Standards: LVPECL, LVDS, B-LVDS, and
M-LVDS (A3P250 and above)
• I/O Registers on Input, Output, and Enable Paths
• Hot-Swappable and Cold Sparing I/Os
• Programmable Output Slew Rate
and Drive Strength
• Weak Pull-Up/-Down
• IEEE 1149.1 (JTAG) Boundary Scan Test
• Pin-Compatible Packages across the ProASIC3 Family
• Six CCC Blocks, One with an Integrated PLL
• Configurable Phase-Shift, Multiply/Divide, Delay Capabilities
and External Feedback
• Wide Input Frequency Range (1.5 MHz to 350 MHz)
• 1 kbit of FlashROM User Nonvolatile Memory
• SRAMs and FIFOs with Variable-Aspect-Ratio 4,608-Bit RAM
Blocks (×1, ×2, ×4, ×9, and ×18 organizations)
• True Dual-Port SRAM (except ×18)
Reprogrammable Flash Technology
• 130-nm, 7-Layer Metal (6 Copper), Flash-Based CMOS
Process
• Live at Power-Up (LAPU) Level 0 Support
• Single-Chip Solution
• Retains Programmed Design when Powered Off
High Performance
• 350 MHz System Performance
• 3.3 V, 66 MHz 64-Bit PCI
In-System Programming (ISP) and Security
• ISP Using On-Chip 128-Bit Advanced Encryption Standard
(AES) Decryption (except ARM
®
-enabled ProASIC
®
3 devices)
via JTAG (IEEE 1532–compliant)
• FlashLock
®
to Secure FPGA Contents
Clock Conditioning Circuit (CCC) and PLL
Low Power
• Core Voltage for Low Power
• Support for 1.5 V-Only Systems
• Low-Impedance Flash Switches
Embedded Memory
High-Performance Routing Hierarchy
• Segmented, Hierarchical Routing and Clock Structure
ARM Processor Support in ProASIC3 FPGAs
ProASIC3 Devices
Cortex-M1 Devices
2
System Gates
Typical Equivalent Macrocells
VersaTiles (D-flip-flops)
RAM Kbits (1,024 bits)
4,608-Bit Blocks
FlashROM Kbits
Secure (AES) ISP
3
Integrated PLL in CCCs
VersaNet Globals
4
I/O Banks
Maximum User I/Os
Package Pins
QFN
CS
VQFP
TQFP
PQFP
FBGA
A3P015
1
15,000
128
384
1
6
2
49
QN68
A3P030
30,000
256
768
1
6
2
81
QN48, QN68,
QN132
VQ100
A3P060
60,000
512
1,536
18
4
1
Yes
1
18
2
96
QN132
CS121
VQ100
TQ144
FG144
A3P125
125,000
1,024
3,072
36
8
1
Yes
1
18
2
133
QN132
VQ100
TQ144
PQ208
FG144
A3P250
M1A3P250
250,000
2,048
6,144
36
8
1
Yes
1
18
4
157
QN132
5
VQ100
PQ208
PQ208
FG144/256
5
FG144/256/
484
PQ208
FG144/256/
484
A3P400
M1A3P400
400,000
9,216
54
12
1
Yes
1
18
4
194
A3P600
M1A3P600
600,000
13,824
108
24
1
Yes
1
18
4
235
• M1 ProASIC3 Devices—ARM
®
Cortex™-M1 Soft Processor
Available with or without Debug
A3P1000
M1A3P1000
1,000,000
24,576
144
32
1
Yes
1
18
4
300
PQ208
FG144/256/
484
Notes:
1. A3P015 is not recommended for new designs.
2. Refer to the
Cortex-M1
product brief for more information.
3. AES is not available for Cortex-M1 ProASIC3 devices.
4. Six chip (main) and three quadrant global networks are available for A3P060 and above.
5. The M1A3P250 device does not support this package.
6. For higher densities and support of additional features, refer to the
ProASIC3E Flash Family FPGAs
datasheet.
† A3P015 and A3P030 devices do not support this feature.
September 2012
© 2012 Microsemi Corporation
‡ Supported only by A3P015 and A3P030 devices.
I

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