Small Signal Bipolar Transistor, 2A I(C), PNP,
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
包装说明 | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code | compli |
最大集电极电流 (IC) | 2 A |
集电极-发射极最大电压 | 50 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 120 |
JEDEC-95代码 | TO-92 |
JESD-30 代码 | O-PBCY-T3 |
元件数量 | 1 |
端子数量 | 3 |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | ROUND |
封装形式 | CYLINDRICAL |
极性/信道类型 | PNP |
最大功率耗散 (Abs) | 0.9 W |
表面贴装 | NO |
端子形式 | THROUGH-HOLE |
端子位置 | BOTTOM |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 100 MHz |
Base Number Matches | 1 |
2SA1020G-Y-T9N-B | 2SA1020G-O-T9N-B | 2SA1020G-Y-AE3-R | 2SA1020G-Y-T9N-K | 2SA1020G-Y-AB3-R | 2SA1020G-O-AB3-R | 2SA1020G-O-T9N-K | 2SA1020G-O-AE3-R | 2SA1020L-O-AE3-R | 2SA1020L-Y-AE3-R | |
---|---|---|---|---|---|---|---|---|---|---|
描述 | Small Signal Bipolar Transistor, 2A I(C), PNP, | Small Signal Bipolar Transistor, 2A I(C), PNP, | Small Signal Bipolar Transistor, 2A I(C), PNP, | Small Signal Bipolar Transistor, 2A I(C), PNP, | Small Signal Bipolar Transistor, 2A I(C), PNP, | Small Signal Bipolar Transistor, 2A I(C), PNP, | Small Signal Bipolar Transistor, 2A I(C), PNP, | Small Signal Bipolar Transistor, 2A I(C), PNP, | Small Signal Bipolar Transistor, 2A I(C), PNP, | Small Signal Bipolar Transistor, 2A I(C), PNP, |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 符合 | 符合 |
包装说明 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | SMALL OUTLINE, R-PDSO-G3 | CYLINDRICAL, O-PBCY-T3 | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 | CYLINDRICAL, O-PBCY-T3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code | compli | compli | compli | compli | compli | compli | compli | compli | compli | compli |
最大集电极电流 (IC) | 2 A | 2 A | 2 A | 2 A | 2 A | 2 A | 2 A | 2 A | 2 A | 2 A |
集电极-发射极最大电压 | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 120 | 70 | 120 | 120 | 120 | 70 | 70 | 70 | 70 | 120 |
JESD-30 代码 | O-PBCY-T3 | O-PBCY-T3 | R-PDSO-G3 | O-PBCY-T3 | R-PSSO-F3 | R-PSSO-F3 | O-PBCY-T3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | ROUND | ROUND | RECTANGULAR | ROUND | RECTANGULAR | RECTANGULAR | ROUND | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | CYLINDRICAL | CYLINDRICAL | SMALL OUTLINE | CYLINDRICAL | SMALL OUTLINE | SMALL OUTLINE | CYLINDRICAL | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | PNP | PNP | PNP | PNP | PNP | PNP | PNP | PNP | PNP | PNP |
最大功率耗散 (Abs) | 0.9 W | 0.9 W | 0.3 W | 0.9 W | 0.5 W | 0.5 W | 0.9 W | 0.3 W | 0.3 W | 0.3 W |
表面贴装 | NO | NO | YES | NO | YES | YES | NO | YES | YES | YES |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | GULL WING | THROUGH-HOLE | FLAT | FLAT | THROUGH-HOLE | GULL WING | GULL WING | GULL WING |
端子位置 | BOTTOM | BOTTOM | DUAL | BOTTOM | SINGLE | SINGLE | BOTTOM | DUAL | DUAL | DUAL |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | - | - |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved