2N3634, 2N3634L, 2N3635,
2N3635L, 2N3636,
2N3636L, 2N3637, 2N3637L
Low Power Transistors
PNP Silicon
Features
http://onsemi.com
COLLECTOR
3
2
BASE
Unit
Vdc
Vdc
Vdc
Adc
W
W
°C
TO−5
CASE 205AA
STYLE 1
2N3634L
2N3635L
2N3636L
2N3637L
1
EMITTER
•
MIL−PRF−19500/357 Qualified
•
Available as JAN, JANTX, JANTXV and JANHC
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Characteristic
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter−Base Voltage
Collector Current
−
Continuous
Total Device Dissipation
@ T
A
= 25°C
Total Device Dissipation
@ T
C
= 25°C
Operating and Storage Junc-
tion Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
P
T
T
J
, T
stg
2N3634/L
2N3635/L
−140
−140
−5.0
1.0
1.0
5.0
−65
to +200
2N3636/L
2N3637/L
−175
−175
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
175
35
Unit
°C/W
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Level
Device
2N3634
2N3635
JAN
JANTX
JANTXV
JANHC
2N3636
2N3637
2N3634L
2N3635L
2N3636L
2N3637L
TO−5
Bulk
TO−39
Bulk
Package
Shipping
TO−39
CASE 205AB
STYLE 1
2N3634
2N3635
2N3636
2N3637
©
Semiconductor Components Industries, LLC, 2013
January, 2013
−
Rev. 0
1
Publication Order Number:
2N3637/D
2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage
(I
C
=
−10
mA)
Emitter−Base Cutoff Current
(V
EB
=
−3.0
V)
(V
EB
=
−5.0
V)
Collector−Emitter Cutoff Current
(V
CE
=
−100
V)
Collector−Base Cutoff Current
(V
CB
=
−100
V)
(V
CB
=
−140
V)
(V
CB
=
−175
V)
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
=
−0.1
mA, V
CE
=
−10
V)
(I
C
=
−1.0
mA, V
CE
=
−10
V)
(I
C
=
−10
mA, V
CE
=
−10
V)
(I
C
=
−50
mA, V
CE
=
−10
V)
(I
C
=
−150
mA, V
CE
=
−10
V)
DC Current Gain
(I
C
=
−0.1
mA, V
CE
=
−10
V)
(I
C
=
−1.0
mA, V
CE
=
−10
V)
(I
C
=
−10
mA, V
CE
=
−10
V)
(I
C
=
−50
mA, V
CE
=
−10
V)
(I
C
=
−150
mA, V
CE
=
−10
V)
Collector
−Emitter
Saturation Voltage
(I
C
=
−10
mA, I
B
=
−1.0
mA)
(I
C
=
−50
mA, I
B
=
−5.0
mA)
Base
−Emitter
Saturation Voltage
(I
C
=
−10
mA, I
B
=
−1.0
mA)
(I
C
=
−50
mA, I
B
=
−5.0
mA)
SMALL−SIGNAL CHARACTERISTICS
Magnitude of Small−Signal Current Gain
(I
C
=
−30
mA, V
CE
=
−30
V, f = 100 MHz)
Small−Signal Current Gain
(I
C
=
−10
mA, V
CE
=
−10
V, f = 1 kHz)
Output Capacitance
(V
CB
=
−20
V, I
E
= 0 A, 100 kHz
≤
f
≤
1.0 MHz)
Input Capacitance
(V
EB
=
−1.0
V, I
C
= 0 A, 100 kHz
≤
f
≤
1.0 MHz)
Noise Figure
(V
CE
=
−10
V, I
C
=
−0.5
mA, R
g
= 1 kW, f = 100 Hz)
(V
CE
=
−10
V, I
C
=
−0.5
mA, R
g
= 1 kW, f = 1.0 kHz)
(V
CE
=
−10
V, I
C
=
−0.5
mA, R
g
= 1 kW, f = 10 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Turn−Off Time
(Reference Figure 11 in MIL−PRF−19500/357)
(Reference Figure 11 in MIL−PRF−19500/357)
(Reference Figure 11 in MIL−PRF−19500/357)
(Reference Figure 11 in MIL−PRF−19500/357)
(Reference Figure 11 in MIL−PRF−19500/357)
t
d
t
r
t
s
t
f
t
off
−
−
−
−
−
100
100
500
150
600
ns
ns
ns
ns
ns
2N3634, 2N3636
2N3635, 2N3637
2N3634, 2N3636
2N3635, 2N3637
|h
fe
|
1.5
2.0
40
80
−
−
−
−
−
8.0
8.5
160
320
10
75
5.0
3.0
3.0
−
2N3634, 2N3636
h
FE
25
45
50
50
30
55
90
100
100
60
−
−
−
−0.65
−
−
−
150
−
−
−
−
300
−
−0.3
−0.6
−0.8
−0.9
−
2N3634, 2N3635
2N3636, 2N3637
V
(BR)CEO
−140
−175
−
−
−
−
−
−
−
−
−50
−10
−10
−100
−10
−10
V
Symbol
Min
Max
Unit
I
EBO
nA
mA
mA
nA
mA
mA
I
CEO
I
CBO
2N3634, 2N3635
2N3636, 2N3637
2N3635, 2N3637
h
FE
−
V
CE(sat)
V
V
BE(sat)
V
h
fe
−
C
obo
C
ibo
NF
pF
pF
dB
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
http://onsemi.com
2
2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L
PACKAGE DIMENSIONS
TO−5 3−Lead
CASE 205AA
ISSUE B
B
DETAIL X
A
B
P
L
C
A
K
E
NOTE 7
3X
SEATING
PLANE
U
U
R
NOTE 5
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN
SIONS A, B, AND T.
8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P.
DIM
A
B
C
D
E
F
H
J
K
L
M
N
P
R
T
U
MILLIMETERS
MIN
MAX
8.89
9.40
8.00
8.51
6.10
6.60
0.41
0.53
0.23
3.18
0.41
0.48
0.71
0.86
0.73
1.02
38.10
44.45
6.35
---
45
_
BSC
5.08 BSC
---
1.27
1.37 BSC
---
0.76
2.54
---
INCHES
MIN
MAX
0.350
0.370
0.315
0.335
0.240
0.260
0.016
0.021
0.009
0.125
0.016
0.019
0.028
0.034
0.029
0.040
1.500
1.750
0.250
---
45
_
BSC
0.200 BSC
---
0.050
0.054 BSC
---
0.030
0.100
---
T
D
NOTES 4 & 6
S
DETAIL X
0.007 (0.18MM) A B
N
C
M
H
M
C
J
2
1
3
LEAD IDENTIFICATION
DETAIL
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
http://onsemi.com
3
2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L
PACKAGE DIMENSIONS
TO−39 3−Lead
CASE 205AB
ISSUE A
B
DETAIL X
A
B
P
L
C
A
K
E
NOTE 7
SEATING
PLANE
U
U
R
NOTE 5
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN
SIONS A, B, AND T.
8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P.
DIM
A
B
C
D
E
F
H
J
K
L
M
N
P
R
T
U
MILLIMETERS
MIN
MAX
8.89
9.40
8.00
8.51
6.10
6.60
0.41
0.48
0.23
3.18
0.41
0.48
0.71
0.86
0.73
1.02
12.70
14.73
6.35
---
45
_
BSC
5.08 BSC
---
1.27
1.37 BSC
---
0.76
2.54
---
INCHES
MIN
MAX
0.350
0.370
0.315
0.335
0.240
0.260
0.016
0.019
0.009
0.125
0.016
0.019
0.028
0.034
0.029
0.040
0.500
0.580
0.250
---
45
_
BSC
0.200 BSC
---
0.050
0.054 BSC
---
0.030
0.100
---
T
D
NOTES 4 & 6
0.007 (0.18MM) A B
S
C
3X
DETAIL X
M
H
M
C
J
N
2
1
3
LEAD IDENTIFICATION
DETAIL
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
http://onsemi.com
4
2N3637/D
模拟与混合信号
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
