2N3634, 2N3634L, 2N3635,
2N3635L, 2N3636,
2N3636L, 2N3637, 2N3637L
Low Power Transistors
PNP Silicon
Features
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COLLECTOR
3
2
BASE
Unit
Vdc
Vdc
Vdc
Adc
W
W
°C
TO−5
CASE 205AA
STYLE 1
2N3634L
2N3635L
2N3636L
2N3637L
1
EMITTER
•
MIL−PRF−19500/357 Qualified
•
Available as JAN, JANTX, JANTXV and JANHC
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Characteristic
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter−Base Voltage
Collector Current
−
Continuous
Total Device Dissipation
@ T
A
= 25°C
Total Device Dissipation
@ T
C
= 25°C
Operating and Storage Junc-
tion Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
P
T
T
J
, T
stg
2N3634/L
2N3635/L
−140
−140
−5.0
1.0
1.0
5.0
−65
to +200
2N3636/L
2N3637/L
−175
−175
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
175
35
Unit
°C/W
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Level
Device
2N3634
2N3635
JAN
JANTX
JANTXV
JANHC
2N3636
2N3637
2N3634L
2N3635L
2N3636L
2N3637L
TO−5
Bulk
TO−39
Bulk
Package
Shipping
TO−39
CASE 205AB
STYLE 1
2N3634
2N3635
2N3636
2N3637
©
Semiconductor Components Industries, LLC, 2013
January, 2013
−
Rev. 0
1
Publication Order Number:
2N3637/D
2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage
(I
C
=
−10
mA)
Emitter−Base Cutoff Current
(V
EB
=
−3.0
V)
(V
EB
=
−5.0
V)
Collector−Emitter Cutoff Current
(V
CE
=
−100
V)
Collector−Base Cutoff Current
(V
CB
=
−100
V)
(V
CB
=
−140
V)
(V
CB
=
−175
V)
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
=
−0.1
mA, V
CE
=
−10
V)
(I
C
=
−1.0
mA, V
CE
=
−10
V)
(I
C
=
−10
mA, V
CE
=
−10
V)
(I
C
=
−50
mA, V
CE
=
−10
V)
(I
C
=
−150
mA, V
CE
=
−10
V)
DC Current Gain
(I
C
=
−0.1
mA, V
CE
=
−10
V)
(I
C
=
−1.0
mA, V
CE
=
−10
V)
(I
C
=
−10
mA, V
CE
=
−10
V)
(I
C
=
−50
mA, V
CE
=
−10
V)
(I
C
=
−150
mA, V
CE
=
−10
V)
Collector
−Emitter
Saturation Voltage
(I
C
=
−10
mA, I
B
=
−1.0
mA)
(I
C
=
−50
mA, I
B
=
−5.0
mA)
Base
−Emitter
Saturation Voltage
(I
C
=
−10
mA, I
B
=
−1.0
mA)
(I
C
=
−50
mA, I
B
=
−5.0
mA)
SMALL−SIGNAL CHARACTERISTICS
Magnitude of Small−Signal Current Gain
(I
C
=
−30
mA, V
CE
=
−30
V, f = 100 MHz)
Small−Signal Current Gain
(I
C
=
−10
mA, V
CE
=
−10
V, f = 1 kHz)
Output Capacitance
(V
CB
=
−20
V, I
E
= 0 A, 100 kHz
≤
f
≤
1.0 MHz)
Input Capacitance
(V
EB
=
−1.0
V, I
C
= 0 A, 100 kHz
≤
f
≤
1.0 MHz)
Noise Figure
(V
CE
=
−10
V, I
C
=
−0.5
mA, R
g
= 1 kW, f = 100 Hz)
(V
CE
=
−10
V, I
C
=
−0.5
mA, R
g
= 1 kW, f = 1.0 kHz)
(V
CE
=
−10
V, I
C
=
−0.5
mA, R
g
= 1 kW, f = 10 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Turn−Off Time
(Reference Figure 11 in MIL−PRF−19500/357)
(Reference Figure 11 in MIL−PRF−19500/357)
(Reference Figure 11 in MIL−PRF−19500/357)
(Reference Figure 11 in MIL−PRF−19500/357)
(Reference Figure 11 in MIL−PRF−19500/357)
t
d
t
r
t
s
t
f
t
off
−
−
−
−
−
100
100
500
150
600
ns
ns
ns
ns
ns
2N3634, 2N3636
2N3635, 2N3637
2N3634, 2N3636
2N3635, 2N3637
|h
fe
|
1.5
2.0
40
80
−
−
−
−
−
8.0
8.5
160
320
10
75
5.0
3.0
3.0
−
2N3634, 2N3636
h
FE
25
45
50
50
30
55
90
100
100
60
−
−
−
−0.65
−
−
−
150
−
−
−
−
300
−
−0.3
−0.6
−0.8
−0.9
−
2N3634, 2N3635
2N3636, 2N3637
V
(BR)CEO
−140
−175
−
−
−
−
−
−
−
−
−50
−10
−10
−100
−10
−10
V
Symbol
Min
Max
Unit
I
EBO
nA
mA
mA
nA
mA
mA
I
CEO
I
CBO
2N3634, 2N3635
2N3636, 2N3637
2N3635, 2N3637
h
FE
−
V
CE(sat)
V
V
BE(sat)
V
h
fe
−
C
obo
C
ibo
NF
pF
pF
dB
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
http://onsemi.com
2
2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L
PACKAGE DIMENSIONS
TO−5 3−Lead
CASE 205AA
ISSUE B
B
DETAIL X
A
B
P
L
C
A
K
E
NOTE 7
3X
SEATING
PLANE
U
U
R
NOTE 5
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN
SIONS A, B, AND T.
8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P.
DIM
A
B
C
D
E
F
H
J
K
L
M
N
P
R
T
U
MILLIMETERS
MIN
MAX
8.89
9.40
8.00
8.51
6.10
6.60
0.41
0.53
0.23
3.18
0.41
0.48
0.71
0.86
0.73
1.02
38.10
44.45
6.35
---
45
_
BSC
5.08 BSC
---
1.27
1.37 BSC
---
0.76
2.54
---
INCHES
MIN
MAX
0.350
0.370
0.315
0.335
0.240
0.260
0.016
0.021
0.009
0.125
0.016
0.019
0.028
0.034
0.029
0.040
1.500
1.750
0.250
---
45
_
BSC
0.200 BSC
---
0.050
0.054 BSC
---
0.030
0.100
---
T
D
NOTES 4 & 6
S
DETAIL X
0.007 (0.18MM) A B
N
C
M
H
M
C
J
2
1
3
LEAD IDENTIFICATION
DETAIL
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
http://onsemi.com
3
2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L
PACKAGE DIMENSIONS
TO−39 3−Lead
CASE 205AB
ISSUE A
B
DETAIL X
A
B
P
L
C
A
K
E
NOTE 7
SEATING
PLANE
U
U
R
NOTE 5
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN
SIONS A, B, AND T.
8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P.
DIM
A
B
C
D
E
F
H
J
K
L
M
N
P
R
T
U
MILLIMETERS
MIN
MAX
8.89
9.40
8.00
8.51
6.10
6.60
0.41
0.48
0.23
3.18
0.41
0.48
0.71
0.86
0.73
1.02
12.70
14.73
6.35
---
45
_
BSC
5.08 BSC
---
1.27
1.37 BSC
---
0.76
2.54
---
INCHES
MIN
MAX
0.350
0.370
0.315
0.335
0.240
0.260
0.016
0.019
0.009
0.125
0.016
0.019
0.028
0.034
0.029
0.040
0.500
0.580
0.250
---
45
_
BSC
0.200 BSC
---
0.050
0.054 BSC
---
0.030
0.100
---
T
D
NOTES 4 & 6
0.007 (0.18MM) A B
S
C
3X
DETAIL X
M
H
M
C
J
N
2
1
3
LEAD IDENTIFICATION
DETAIL
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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4
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