7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
2N2880
APPLICATIONS:
•
•
Fast Switching
High Frequency Switching and Amplifying
FEATURES:
•
•
High Reliability
Greater Gain Stability
5 Amp, 80V,
Planar, NPN
Power Transistors
JAN,JTX,JANTXV,JANS
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200
°
C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
TO-59
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
CBO
*
V
CEO
*
V
EBO
*
I
C
*
I
B
*
T
STG
*
T
J
*
*
P
T
*
θ
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Storage Temperature
Operating Junction Temperature
Lead Temperature 1/16"
From Case for 10 Sec.
Power Dissipation
T
A
= 25
°
C
T
C
= 100
°
C
Thermal Resistance
Junction to Case
VALUE
110
80
8
5
0.5
-65 to 200
-65 to 200
230
UNITS
V
V
V
A
A
°
C
°
C
°
C
2
30
3.33
W
W
°
C/W
JC
*
Indicates
MIL-S-19500/315
MSC0950A.DOC 11-09-98
2N2880
ELECTRICAL CHARACTERISTICS
(25
°
Case Temperature Unless Otherwise Noted)
SYMBOL
BV
CBO
*
BV
CEO
*
BV
EBO
*
I
CEO
*
I
CEX
*
I
CBO
*
I
EBO
*
hFE*
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
(Note 1)
Emitter-Base Voltage
Collector-Emitter
Cutoff Current
Collector-Emitter
Cutoff Current
Collector-Base
Cutoff Current
Emitter-Base
Cutoff Current
DC Current Gain
(Note 1)
TEST CONDITIONS
I
C
= 10
µ
Adc, Cond. D
I
C
= 0.1 Adc, Cond. D
I
E
= 10
µ
Adc, Cond. D
V
CE
= 60 Vdc, Cond. D
V
CE
= 110 Vdc, V
EB
= 0.5 Vdc, Cond. A
V
CE
= 80 Vdc, V
EB
= 0.5 Vdc, Cond. A, T
A
= 150
°
C
V
CB
= 80 Vdc, Cond. D
V
CB
= 60 Vdc, Cond. D, T
A
= - 150
°
C
V
EB
= 6 Vdc, Cond. D
I
C
= 50 mAdc, V
CE
= 5 Vdc
I
C
= 1 Adc, V
CE
= 5 Vdc
I
C
= 5 Adc, V
CE
= 5 Vdc
I
C
= 1 Adc, V
CE
= 5 Vdc, T
A
= - 55
°
C
I
C
= 50 mAdc, V
CE
= 5 Vdc, f =
è
KHz
I
C
= 1 Adc, I
B
= 0.1 Adc
I
C
= 5 Adc, I
B
= 0.5 Adc
I
C
= 1 Adc, I
B
= 0.1 Adc
I
C
= 1 Adc, V
CE
= 2 Vdc
I
C
= 1 Adc, V
CE
= 10 Vdc, f = 10 MHz
V
CB
= 10 Vdc, 1
E
= 0, f = 1 MHz
I
C
= 1 A, I
B
1
= I
B
2
= 100 ma
I
C
= 1 A, I
B
1
= I
B2
= 100 ma
I
C
= 1 A, I
B
1,
= I
B
2
= 100 ma
I
C
= 1 A, I
B
1
= I
B2
= 100 ma
V
CE
= 20 Vdc, t = 10 Sec, T
C
= 100
°
C
V
CE
= 80 Vdc, t = 10 Sec, T
C
= 100
°
C
I
C
= 5 A, L = 1 mH, V
Clamp
= 110 V, T
C
= 100
°
C
I
B
= 0.5 A, R
BB2
= 20
Ω
, V
BB2
= -3.0V
I
C
= 5 A, L = 1 mH, Base Open
I
C
= 1.6 A, L = 10 mH, Base Open
VALUE
Min.
Max.
110
80
8
----
----
----
----
----
----
40
40
15
15
40
----
----
----
----
30
----
----
----
----
----
1.5
80
12.5
----
----
----
20
1.0
50
0.2
10
0.2
120
120
----
----
120
0.25
1.5
1.2
1.2
120
150
60
300
1.7
300
----
----
----
Units
Vdc
Vdc
Vdc
µ
Adc
µ
Adc
µ
A
µ
Adc
----
µ
Adc
----
----
----
----
----
Vdc
Vdc
Vdc
Vdc
MHz
pf
ns
ns
µ
s
hFE*
V
CE(sat)
*
V
BE(sat)*
V
BE(on)
*
f
T
*
C
ob
*
td*
tr*
ts*
tf*
I
S/B
*
E
S/B
*
E
S/B
*
AC Current Gain
Collector Saturation
Voltage (Note 1)
Base Saturation
Voltage (Note 1)
Base On-Voltage
(Note 1)
Gain-Bandwidth Product
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Forward-Biased
Second Breakdown
Clamped Reverse-
Biased Second
Breakdown
Unclamped Reverse-
Biased Second
Breakdown
ns
Adc
mAdc
mj
12.5
12.8
----
----
mj
mj
Note 1: Pulse Test: PW = 300
µ
s, Duty Cycle
≤
2%.
* Indicates MIL-S-19500/315
MSC0950A.DOC 11-09-98
能源基础设施
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