BLL8H0514L-130;
BLL8H0514LS-130
LDMOS driver transistor
Rev. 2 — 9 February 2015
Product data sheet
1. Product profile
1.1 General description
130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz
range.
Table 1.
Application information
Typical RF performance at T
case
= 25
C; I
Dq
= 50 mA; in a class-AB application circuit.
Test signal
pulsed RF
f
(MHz)
960 to 1215
1200 to 1400
t
p
128
300
10
10
V
DS
P
L
50
50
G
p
RL
in
D
10
10
54
50
P
droop(pulse)
0
0
t
r
15
15
t
f
8
8
(s) (%) (V)
(W) (dB) (dB) (%) (dB)
130 19
130 17
(ns) (ns)
1.2 Features and benefits
Easy power control
Integrated dual side ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (0.5 GHz to 1.4 GHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range
NXP Semiconductors
BLL8H0514L(S)-130
LDMOS driver transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLL8H0514L-130 (SOT1135A)
BLL8H0514LS-130 (SOT1135B)
1
2
3
drain
gate
source
[1]
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLL8H0514L-130
BLL8H0514LS-130
-
-
flanged ceramic package; 2 mounting holes; 2 leads
earless flanged ceramic package; 2 leads
Version
SOT1135A
SOT1135B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
6
65
[1]
Max
100
+13
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
BLL8H0514L-130_0514LS-130
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 9 February 2015
2 of 13
NXP Semiconductors
BLL8H0514L(S)-130
LDMOS driver transistor
5. Thermal characteristics
Table 5.
Symbol
Z
th(j-c)
Thermal characteristics
Parameter
transient thermal impedance from
junction to case
Conditions
T
case
= 85
C;
P
L
= 130 W
t
p
= 100
s;
= 10 %
t
p
= 200
s;
= 10 %
t
p
= 300
s;
= 10 %
t
p
= 100
s;
= 20 %
t
p
= 1 ms;
= 10 %
0.17
0.22
0.25
0.23
0.36
K/W
K/W
K/W
K/W
K/W
Typ
Unit
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
V
GS
= 0 V; I
D
= 630 mA
V
DS
= 10 V; I
D
= 135 mA
V
GS
= 0 V; V
DS
= 50 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 135 mA
V
GS
= V
GS(th)
+ 6.25 V;
I
D
= 135 mA
Min
100
1.3
-
Typ Max
-
1.8
-
-
2.25
1.4
-
140
Unit
V
V
A
A
nA
m
15.8 18
-
806
-
-
-
1578 mS
200 275
Table 7.
RF characteristics
Test signal: pulsed RF; t
p
= 300
s;
= 10 %; RF performance at V
DS
= 50 V; I
Dq
= 50 mA;
f = 1.2 GHz to 1.4 GHz; T
case
= 25
C; unless otherwise specified, in a class-AB production
test circuit.
Symbol
V
DS
G
p
RL
in
D
P
droop(pulse)
t
r
t
f
Parameter
drain-source voltage
power gain
input return loss
drain efficiency
pulse droop power
rise time
fall time
Conditions
P
L
= 130 W
P
L
= 130 W
P
L
= 130 W
P
L
= 130 W
P
L
= 130 W
P
L
= 130 W
P
L
= 130 W
Min Typ Max Unit
-
15
-
45
-
-
-
-
17
10
50
0
20
6
50
-
7
-
0.3
50
50
V
dB
dB
%
dB
ns
ns
BLL8H0514L-130_0514LS-130
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 9 February 2015
3 of 13
NXP Semiconductors
BLL8H0514L(S)-130
LDMOS driver transistor
7. Application information
7.1 Ruggedness in class-AB operation
The BLL8H0514L-130 and BLL8H0514LS-130 are capable of withstanding a load
mismatch corresponding to VSWR = 5 : 1 through all phases under the following
conditions: V
DS
= 50 V; I
Dq
= 50 mA; P
L
= 130 W; f = 1.2 GHz to 1.4 GHz; t
p
= 300
s;
= 10 %.
7.2 Impedance information
Table 8.
f
(MHz)
1200
1300
1400
Typical impedance
Z
S
()
1.21
j3.44
1.56
j4.49
2.21
j4.86
Z
L
()
2.40
j0.63
2.30
j0.87
2.00
j1.71
Fig 1.
Definition of transistor impedance
BLL8H0514L-130_0514LS-130
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 9 February 2015
4 of 13
NXP Semiconductors
BLL8H0514L(S)-130
LDMOS driver transistor
7.3 Performance curves
V
DS
= 50 V; I
Dq
= 50 mA; t
p
= 300
s;
= 10 %.
V
DS
= 50 V; I
Dq
= 50 mA; t
p
= 300
s;
= 10 %.
Fig 2.
Power gain and drain efficiency as function of
frequency; typical values
Fig 3.
Input return loss as a function of frequency;
typical values
V
DS
= 50 V; I
Dq
= 50 mA; t
p
= 300
s;
= 10 %.
(1) f = 1.2 GHz
(2) f = 1.3 GHz
(3) f = 1.4 GHz
V
DS
= 50 V; I
Dq
= 50 mA; t
p
= 300
s;
= 10 %.
(1) f = 1.2 GHz
(2) f = 1.3 GHz
(3) f = 1.4 GHz
Fig 4.
Power gain as a function of output power;
typical values
Fig 5.
Drain efficiency as a function of output power;
typical values
BLL8H0514L-130_0514LS-130
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 9 February 2015
5 of 13
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