MITSUBISHI SEMICONDUCTOR <GaAs FET>
PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
MGFC4419G
InGaAs HEMT Chip
OUTLINE DRAWING
DESCRIPTION
The MGFC4419G low-noise HEMT(High electron Mobility
Transistor) is designed for use in X to K band amplifiers.
FEATURES (TARGET)
Low noise figure
NFmin,=0.5 dB (MAX.)
High associated gain
Gs=12.0 dB (MIN.)
@ f=12GHz
@ f=12GHz
APPLICATION
X to K band amplifiers.
RECOMMENDED BIAS CONDITIONS
V
DS
=2V , I
D
=10mA
Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS
Symbol
V
GDO
V
GSO
I
D
P
T
Tch
Tstg
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
( Ta=25°C )
< Keep safety first in your circuit designs! >
Ratings
-4
-4
60
50
125
-65 ~ +125
Unit
V
V
mA
mW
°C
°C
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (i)placement of
substitutive, auxiliary circuits, (ii)use of non-flammable
material or (iii)prevention against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)GDO
I
GSS
I
DSS
V
GS (off)
gm
Gs
N
Fmin
Parameter
Gate to drain breakdown voltage
Gate to source leakage current
Saturated drain current
Gate to Source cut-off voltage
Transconductance
Associated gain
Minimum noise figure
( Ta=25°C )
Test conditions
IG= -10µA
V
GS
=2V, V
DS
=0V
V
DS
=2V, V
GS
=0V
V
DS
=2V, I
D
=500µA
V
DS
=2V, I
D
=10mA
V
DS
=2V, I
D
=10mA
f=12GHz
Limits
Min.
-3
—
—
-0.1
—
12
—
Typ.
—
—
—
—
75
13.5
—
Max
—
50
60
-1.5
—
—
0.5
Unit
V
µA
mA
V
mS
dB
dB
MITSUBISHI
ELECTRIC
as of Jan.'98
(1/4)
MITSUBISHI SEMICONDUCTOR <GaAs FET>
PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
MGFC4419G
InGaAs HEMT Chip
Typical Characteristics
MITSUBISHI
ELECTRIC
as of Jan.'98
(2/4)
MITSUBISHI SEMICONDUCTOR <GaAs FET>
PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
MGFC4419G
InGaAs HEMT Chip
Typical Characteristics
S Parameters (Ta=25 deg.C , VDS=2V , ID=10mA )
f
(GHz)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
Magn.
0.994
0.976
0.950
0.917
0.880
0.842
0.805
0.771
0.739
0.711
0.687
0.666
0.648
0.634
0.622
0.613
0.607
0.603
0.600
0.600
0.601
0.603
0.606
0.610
0.616
0.621
S11
Angle
-12.2
-24.3
-36.0
-47.3
-58.1
-68.4
-78.2
-87.6
-96.5
-104.9
-113.1
-120.9
-128.3
-135.5
-142.3
-148.9
-155.2
-161.3
-167.0
-172.6
-177.9
177.0
172.2
167.5
163.0
158.7
Magn.
5.908
5.790
5.608
5.380
5.123
4.854
4.585
4.324
4.076
3.843
3.626
3.426
3.241
3.071
2.914
2.770
2.636
2.513
2.398
2.292
2.193
2.100
2.013
1.931
1.855
1.782
S21
Angle
169.6
159.4
149.5
140.0
131.1
122.7
114.8
107.3
100.3
93.7
87.4
81.4
75.7
70.2
64.9
59.8
54.8
50.0
45.3
40.7
36.3
31.9
27.7
23.5
19.4
15.4
Magn.
0.019
0.037
0.054
0.069
0.083
0.094
0.103
0.111
0.117
0.122
0.127
0.130
0.133
0.136
0.138
0.139
0.141
0.143
0.144
0.145
0.146
0.148
0.149
0.151
0.152
0.154
S12
Angle
82.3
74.9
67.7
61.1
54.9
49.3
44.2
39.6
35.4
31.7
28.3
25.3
22.5
20.0
17.7
15.6
13.8
12.0
10.5
9.0
7.7
6.4
5.3
4.2
3.1
2.1
Magn.
0.660
0.645
0.623
0.595
0.564
0.531
0.498
0.466
0.436
0.407
0.381
0.357
0.335
0.316
0.298
0.283
0.270
0.259
0.250
0.243
0.238
0.235
0.234
0.235
0.238
0.242
S22
Angle
-8.9
-17.6
-26.0
-34.0
-41.6
-48.7
-55.5
-61.9
-68.1
-74.1
-79.9
-85.6
-91.4
-97.2
-103.0
-109.0
-115.1
-121.4
-127.8
-134.3
-140.9
-147.5
-154.1
-160.6
-166.9
-173.0
MSG/MAG
(dB)
24.9
21.9
20.1
18.9
17.9
17.1
16.5
15.9
15.4
15.0
14.6
14.2
13.9
13.6
13.3
13.0
12.7
12.5
12.2
12.0
11.8
11.5
10.8
10.1
9.7
9.3
0.017
0.038
0.065
0.100
0.143
0.192
0.246
0.304
0.364
0.425
0.486
0.546
0.604
0.660
0.713
0.763
0.810
0.853
0.892
0.927
0.958
0.984
1.006
1.024
1.037
1.045
K
Noise Parameters (Ta=25 deg.C , VDS=2V , ID=10mA )
f
(GHz)
4
8
12
18
22
26
Magn.
0.71
0.62
0.55
0.48
0.45
0.45
Gopt.
Angle
33.0
61.1
87.0
123.8
148.1
173.2
Rn
(W)
18.0
14.6
12.2
10.3
11.0
12.4
NFmin.
(dB)
0.24
0.35
0.45
0.63
0.78
0.98
Gs
(dB)
18.3
15.9
13.5
9.9
7.5
5.1
MITSUBISHI
ELECTRIC
as of Jan.'98
(3/4)
MITSUBISHI SEMICONDUCTOR <GaAs FET>
PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
MGFC4419G
InGaAs HEMT Chip
TECHNICAL NOTE
1. Characteristics and quality assurance
1.1 Electrical characteristics
a. DC characteristics on spec. sheet show the test conditions and values using wafer-prober. DC characteristics
are tested 100% devices.
b. RF characteristics are tested using the corresponding packaged FET. When more than 80% 0f the samples
satisfy the value of RF characteristics on spec. sheet , that wafer is accepted for shipment.
1.2 Quality assurance and reliability
a. Mechanical characteristics are tested using corresponding package with sampling test.
b. Visual inspection is complied with MITSUBISHI's technical note.
c. The electrical characteristics and the quality assurance test are sampling test. And so the shipped chips are
contained some sub-standard articles.
d. After opening the packing , the quality of chips are influenced with storage conditions. Our recommended
storage conditions and period is as follows:
Ta=25±3 deg.C
MITSUBISHI's packing + Desiccator
Opened packing + Desiccator
6 months
2 months
In the desiccator , leave the chips in the pack keeping up-side-up and store in a clean and dry enviroment ,
preferable dry N2.
e. Packing quantity
Standard : 400 pcs. or 50 pcs. / each waffle pack
Custom order : 25~400 pcs. / each waffle pack by 25 pcs. step
In case of long storage exceeding 2 months at customer after opening the packing , total quantity of order
shall be separated and small unit quantity of each orders shall be custome ordered. In this case , we may
prepare special spec. No. for each customer. (ex . -21,-22 )
1.3 Others
The device shall not be returned in the following case.
a. Inadequate storage
b. Mishandling
c. Incorrect die/wire bonding
d. RF characteristics failure rate less than 30%.
Table.1. Standard specifications
2. Ordering information
Spec.No. Visual Grade Unit quantity for
The classification with Visual grade & packing quantity
is listed in Table.1.
each waffle packe
-A01
-A02
-A03
-A11
-A12
-A13
A
B
C
A
B
C
25 pcs
400 pcs
MITSUBISHI
ELECTRIC
as of Jan.'98
(4/4)
MITSUBISHI SEMICONDUCTOR <GaAs FET>
PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
MGFC4419G
InGaAs HEMT Chip
S Parameters for MGFC4419G (Simulated Value)
(Conditions:VDS=2V,IDS=10mA,Ta=25C)
f
(GHz)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
S11
Magn.
0.994
0.977
0.951
0.918
0.882
0.844
0.808
0.773
0.742
0.713
0.688
0.667
0.649
0.634
0.623
0.614
0.607
0.603
0.600
0.599
0.600
0.602
0.606
0.610
0.615
0.621
0.627
0.634
0.641
0.649
0.657
0.664
0.672
0.680
0.688
0.696
0.703
0.710
0.717
0.724
Angle
-12.1
-24.1
-35.8
-47.0
-57.8
-68.1
-77.9
-87.2
-96.2
-104.7
-112.9
-120.7
-128.2
-135.4
-142.4
-149.0
-155.4
-161.5
-167.3
-172.9
-178.3
176.6
171.7
167.0
162.5
158.2
154.0
150.1
146.3
142.6
139.1
135.8
132.5
129.4
126.4
123.4
120.6
117.9
115.3
112.8
Magn.
5.823
5.709
5.534
5.314
5.066
4.804
4.542
4.286
4.043
3.813
3.599
3.401
3.218
3.049
2.893
2.750
2.616
2.493
2.379
2.272
2.173
2.080
1.993
1.911
1.833
1.760
1.691
1.626
1.564
1.504
1.448
1.394
1.343
1.293
1.246
1.201
1.158
1.117
1.078
1.040
S21
Angle
169.7
159.5
149.6
140.2
131.3
122.9
114.9
107.4
100.4
93.7
87.4
81.3
75.6
70.0
64.7
59.5
54.5
49.6
44.9
40.3
35.8
31.4
27.1
22.8
18.7
14.6
10.7
6.8
3.0
-0.8
-4.5
-8.1
-11.6
-15.0
-18.4
-21.7
-24.9
-28.1
-31.2
-34.2
Mag.
0.019
0.037
0.054
0.070
0.083
0.094
0.103
0.111
0.117
0.123
0.127
0.130
0.133
0.135
0.137
0.139
0.140
0.141
0.142
0.143
0.144
0.145
0.146
0.147
0.148
0.150
0.151
0.152
0.154
0.155
0.157
0.159
0.161
0.163
0.166
0.168
0.170
0.173
0.175
0.178
S12
Angle
82.3
74.8
67.5
60.8
54.5
48.8
43.5
38.8
34.5
30.6
27.0
23.8
20.9
18.2
15.8
13.5
11.5
9.6
7.9
6.3
4.9
3.5
2.2
1.1
-0.1
-1.1
-2.1
-3.1
-4.1
-5.1
-6.0
-7.0
-8.0
-9.0
-10.0
-11.0
-12.1
-13.2
-14.3
-15.4
Mag.
0.666
0.652
0.630
0.602
0.570
0.536
0.502
0.469
0.438
0.408
0.380
0.355
0.332
0.311
0.293
0.277
0.263
0.251
0.242
0.235
0.230
0.227
0.227
0.228
0.232
0.237
0.243
0.251
0.261
0.271
0.281
0.293
0.305
0.317
0.330
0.343
0.356
0.369
0.382
0.394
S22
Angle
-8.8
-17.4
-25.7
-33.7
-41.2
-48.3
-55.1
-61.6
-67.7
-73.7
-79.6
-85.5
-91.3
-97.3
-103.4
-109.6
-116.0
-122.6
-129.4
-136.3
-143.3
-150.4
-157.3
-164.2
-170.8
-177.2
176.8
171.0
165.6
160.5
155.7
151.1
146.9
142.8
139.0
135.4
132.0
128.7
125.6
122.6
K
0.05
0.10
0.16
0.21
0.26
0.31
0.36
0.41
0.46
0.51
0.56
0.61
0.66
0.71
0.75
0.80
0.84
0.88
0.92
0.95
0.99
1.02
1.04
1.07
1.09
1.11
1.13
1.14
1.15
1.15
1.16
1.16
1.16
1.15
1.15
1.14
1.13
1.12
1.11
1.10
GMAX
(dB)
24.8
21.8
20.1
18.8
17.9
17.1
16.4
15.9
15.4
14.9
14.5
14.2
13.8
13.5
13.2
13.0
12.7
12.5
12.2
12.0
11.8
10.8
10.1
9.5
9.1
8.7
8.3
8.0
7.7
7.5
7.2
7.0
6.8
6.6
6.4
6.3
6.1
6.0
5.8
5.7
MITSUBISHI
ELECTRIC
as of Jan.'98
微控制器 MCU
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