JMnic
Product Specification
Silicon PNP Power Transistors
2SB1640
DESCRIPTION
・With
ITO-220 package
・Low
collector saturation voltage
・Complement
to type 2SD2525
APPLICATIONS
・Audio
frequency power amplifier
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (ITO-220) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-60
-60
-7
-3
-0.5
1.8
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
2SB1640
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=-50mA ;I
B
=0
I
C
=-2A; I
B
=-0.2A
I
C
=-0.5A ; V
CE
=-5V
V
CB
=-60V ;I
E
=0
V
EB
=-7V ;I
C
=0
I
C
=-0.5A ; V
CE
=-5V
I
C
=-2A ; V
CE
=-5V
I
C
=-0.5A ; V
CE
=-5V
I
E
=0; V
CB
=-10V;f=1MHz
100
15
9
50
MHz
pF
MIN
-60
-1.0
-0.75
-1.5
-1.0
-10
-10
320
TYP.
MAX
UNIT
V
V
V
μA
μA
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1640
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
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