16KX4 PAGE MODE DRAM, 120ns, CDIP18, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-18
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Texas Instruments(德州仪器) |
| 零件包装代码 | DIP |
| 包装说明 | DIP, DIP18,.3 |
| 针数 | 18 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| 访问模式 | PAGE |
| 最长访问时间 | 120 ns |
| 其他特性 | RAS ONLY REFRESH |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-CDIP-T18 |
| 长度 | 22.606 mm |
| 内存密度 | 65536 bit |
| 内存集成电路类型 | PAGE MODE DRAM |
| 内存宽度 | 4 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 18 |
| 字数 | 16384 words |
| 字数代码 | 16000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 100 °C |
| 最低工作温度 | -55 °C |
| 组织 | 16KX4 |
| 输出特性 | 3-STATE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP |
| 封装等效代码 | DIP18,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 刷新周期 | 256 |
| 筛选级别 | 38535Q/M;38534H;883B |
| 座面最大高度 | 5.08 mm |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | NMOS |
| 温度等级 | OTHER |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 宽度 | 7.62 mm |
| SMJ4416-12JDS | SMJ4416-15JDL | SMJ4416-15JDS | SMJ4416-20JDS | SMJ4416-20JDL | SMJ4416-12JDL | |
|---|---|---|---|---|---|---|
| 描述 | 16KX4 PAGE MODE DRAM, 120ns, CDIP18, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-18 | 16KX4 PAGE MODE DRAM, 150ns, CDIP18, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-18 | 16KX4 PAGE MODE DRAM, 150ns, CDIP18, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-18 | 16KX4 PAGE MODE DRAM, 200ns, CDIP18, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-18 | 16KX4 PAGE MODE DRAM, 200ns, CDIP18, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-18 | 16KX4 PAGE MODE DRAM, 120ns, CDIP18, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-18 |
| 零件包装代码 | DIP | DIP | DIP | DIP | DIP | DIP |
| 包装说明 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, | DIP, |
| 针数 | 18 | 18 | 18 | 18 | 18 | 18 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | PAGE | PAGE | PAGE | PAGE | PAGE | PAGE |
| 最长访问时间 | 120 ns | 150 ns | 150 ns | 200 ns | 200 ns | 120 ns |
| 其他特性 | RAS ONLY REFRESH | RAS ONLY REFRESH | RAS ONLY REFRESH | RAS ONLY REFRESH | RAS ONLY REFRESH | RAS ONLY REFRESH |
| JESD-30 代码 | R-CDIP-T18 | R-CDIP-T18 | R-CDIP-T18 | R-CDIP-T18 | R-CDIP-T18 | R-CDIP-T18 |
| 长度 | 22.606 mm | 22.606 mm | 22.606 mm | 22.606 mm | 22.606 mm | 22.606 mm |
| 内存密度 | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
| 内存集成电路类型 | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM |
| 内存宽度 | 4 | 4 | 4 | 4 | 4 | 4 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 18 | 18 | 18 | 18 | 18 | 18 |
| 字数 | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words |
| 字数代码 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 100 °C | 70 °C | 100 °C | 100 °C | 70 °C | 70 °C |
| 组织 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP | DIP | DIP | DIP | DIP | DIP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 256 | 256 | 256 | 256 | 256 | 256 |
| 座面最大高度 | 5.08 mm | 5.08 mm | 5.08 mm | 5.08 mm | 5.08 mm | 5.08 mm |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO |
| 技术 | NMOS | NMOS | NMOS | NMOS | NMOS | NMOS |
| 温度等级 | OTHER | COMMERCIAL | OTHER | OTHER | COMMERCIAL | COMMERCIAL |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 宽度 | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | - | - |
| 厂商名称 | Texas Instruments(德州仪器) | - | - | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | - | - |
| 封装等效代码 | DIP18,.3 | DIP18,.3 | DIP18,.3 | DIP18,.3 | - | - |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - |
| 电源 | 5 V | 5 V | 5 V | 5 V | - | - |
| 筛选级别 | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | - | - |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - |
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