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Datasheet> 器件分类 > 分立半导体> 晶体管> MWT-A370SN

MWT-A370SN: 产品描述RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET; 产品类别分立半导体晶体管; 文件大小282KB，共6页; 制造商Microwave_Technology_Inc.

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MWT-A370SN概述

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

MWT-A370SN规格参数

参数名称	属性值
厂商名称	Microwave_Technology_Inc.
包装说明	MICROWAVE, S-CQMW-F4
Reach Compliance Code	unknown
外壳连接	SOURCE
配置	SINGLE
最小漏源击穿电压	8 V
FET 技术	METAL SEMICONDUCTOR
最高频带	K BAND
JESD-30 代码	S-CQMW-F4
元件数量	1
端子数量	4
工作模式	DEPLETION MODE
最高工作温度	150 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	SQUARE
封装形式	MICROWAVE
极性/信道类型	N-CHANNEL
最小功率增益 (Gp)	9.5 dB
认证状态	Not Qualified
表面贴装	YES
端子形式	FLAT
端子位置	QUAD
晶体管应用	AMPLIFIER
晶体管元件材料	GALLIUM ARSENIDE

MWT-A370SN相似产品对比

	MWT-A370SN	MWT-A373GN	MWT-A3GN	MWT-A373SN	MWT-A370HN	MWT-A3HN	MWT-A3SN	MWT-A371HN
描述	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-4	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-4	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-4	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
包装说明	MICROWAVE, S-CQMW-F4	MICROWAVE, X-CXMW-F4	UNCASED CHIP, R-XUUC-N4	MICROWAVE, X-CXMW-F4	MICROWAVE, S-CQMW-F4	UNCASED CHIP, R-XUUC-N4	UNCASED CHIP, R-XUUC-N4	FLANGE MOUNT, R-MDFM-F2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小漏源击穿电压	8 V	8 V	8 V	8 V	8 V	8 V	8 V	8 V
FET 技术	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR
最高频带	K BAND	K BAND	K BAND	K BAND	K BAND	K BAND	K BAND	K BAND
JESD-30 代码	S-CQMW-F4	X-CXMW-F4	R-XUUC-N4	X-CXMW-F4	S-CQMW-F4	R-XUUC-N4	R-XUUC-N4	R-MDFM-F2
元件数量	1	1	1	1	1	1	1	1
端子数量	4	4	4	4	4	4	4	2
工作模式	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED	UNSPECIFIED	METAL
封装形状	SQUARE	UNSPECIFIED	RECTANGULAR	UNSPECIFIED	SQUARE	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	MICROWAVE	MICROWAVE	UNCASED CHIP	MICROWAVE	MICROWAVE	UNCASED CHIP	UNCASED CHIP	FLANGE MOUNT
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最小功率增益 (Gp)	9.5 dB	9 dB	9 dB	9.5 dB	10 dB	10 dB	9.5 dB	10 dB
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
端子形式	FLAT	FLAT	NO LEAD	FLAT	FLAT	NO LEAD	NO LEAD	FLAT
端子位置	QUAD	UNSPECIFIED	UPPER	UNSPECIFIED	QUAD	UPPER	UPPER	DUAL
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE
外壳连接	SOURCE	SOURCE	-	SOURCE	SOURCE	-	-	SOURCE
Base Number Matches	-	1	1	1	1	1	-	-

MWT-A370SN

MWT-A370SN概述

MWT-A370SN规格参数

MWT-A370SN相似产品对比

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