JMnic
Product Specification
Silicon PNP Power Transistors
2SA1142
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SC2682
APPLICATIONS
・Audio
frequency power amplifier; high
frequency power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-126) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
8
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-180
-180
-5
-0.1
1.2
W
UNIT
V
V
V
A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SA1142
TYP.
MAX
UNIT
V
CEsat
Collector-emitter saturation voltage
I
C
=-50mA; I
B
=-5mA
-0.16
-0.5
V
V
BEsat
Base-emitter saturation voltage
I
C
=-50mA; I
B
=-5mA
-0.8
-1.5
V
μA
I
CBO
Collector cut-off current
V
CB
=-180V; I
E
=0
-1
I
EBO
Emitter cut-off current
V
EB
=-3V; I
C
=0
-1
μA
h
FE-1
DC current gain
I
C
=-1mA ; V
CE
=-5V
90
200
h
FE-2
DC current gain
I
C
=-10mA ; V
CE
=-5V
100
200
320
f
T
Transition frequency
I
C
=-20mA ; V
CE
=-10V
180
MHz
C
ob
Output capacitance
I
E
=0 ; V
CB
=-10V;f=1MHz
4.5
pF
h
FE-2
Classifications
O
100-200
Y
160-320
2
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