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IDT70T631S12DD

产品描述Dual-Port SRAM, 256KX18, 12ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144
产品类别存储    存储   
文件大小231KB,共27页
制造商IDT (Integrated Device Technology)
下载文档 详细参数 选型对比 全文预览

IDT70T631S12DD概述

Dual-Port SRAM, 256KX18, 12ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144

IDT70T631S12DD规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称IDT (Integrated Device Technology)
零件包装代码QFP
包装说明20 X 20 MM, 1.40 MM HEIGHT, TQFP-144
针数144
Reach Compliance Codenot_compliant
ECCN代码3A991.B.2.A
最长访问时间12 ns
I/O 类型COMMON
JESD-30 代码S-PQFP-G144
JESD-609代码e0
长度20 mm
内存密度4718592 bit
内存集成电路类型DUAL-PORT SRAM
内存宽度18
湿度敏感等级4
功能数量1
端口数量2
端子数量144
字数262144 words
字数代码256000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织256KX18
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LFQFP
封装等效代码QFP144,.87SQ,20
封装形状SQUARE
封装形式FLATPACK, LOW PROFILE, FINE PITCH
并行/串行PARALLEL
峰值回流温度(摄氏度)225
电源2.5,2.5/3.3 V
认证状态Not Qualified
座面最大高度1.6 mm
最大待机电流0.01 A
最小待机电流2.4 V
最大压摆率0.355 mA
最大供电电压 (Vsup)2.6 V
最小供电电压 (Vsup)2.4 V
标称供电电压 (Vsup)2.5 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn85Pb15)
端子形式GULL WING
端子节距0.5 mm
端子位置QUAD
处于峰值回流温度下的最长时间30
宽度20 mm

文档预览

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Features
LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 2018
HIGH-SPEED 2.5V
IDT70T633/1S
512/256K x 18
ASYNCHRONOUS DUAL-PORT
STATIC RAM
WITH 3.3V 0R 2.5V INTERFACE
Full hardware support of semaphore signaling between
ports on-chip
Fully asynchronous operation from either port
Separate byte controls for multiplexed bus and bus
matching compatibility
Sleep Mode Inputs on both ports
Supports JTAG features compliant to IEEE 1149.1 in
BGA-208 and BGA-256 packages
Single 2.5V (±100mV) power supply for core
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
power supply for I/Os and control signals on each port
Available in a 256-ball Ball Grid Array and 208-ball fine pitch
Ball Grid Array
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Green parts available, see ordering information
UB
R
LB
R
Functional Block Diagram
UB
L
LB
L
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 10/12/15ns (max.)
– Industrial: 10/12ns (max.)
RapidWrite Mode simplifies high-speed consecutive write
cycles
Dual chip enables allow for depth expansion without
external logic
IDT70T633/1 easily expands data bus width to 36 bits or
more using the Master/Slave select when cascading more
than one device
M/S = V
IH
for
BUSY
output flag on Master,
M/S = V
IL
for
BUSY
input on Slave
Busy and Interrupt Flags
On-chip port arbitration logic
R/
W
L
B
E
0
L
B
E
1
L
B
E
1
R
B
E
0
R
R/
W
R
CE
0L
CE
1L
CE
0R
CE
1R
OE
L
Dout0-8_L
Dout9-17_L
Dout0-8_R
Dout9-17_R
OE
R
512/256K x 18
MEMORY
ARRAY
I/O
0L
- I/O
17L
Din_L
Din_R
I/O
0R
- I/O
17R
A
18L
(1)
A
0L
Address
Decoder
ADDR_L
ADDR_R
Address
Decoder
A
18R
(1)
A
0R
TDI
OE
L
CE
0L
CE
1L
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
OE
R
CE
0R
CE
1R
TDO
JTAG
TCK
TMS
TRST
R/W
L
R/W
R
BUSY
L(2,3)
SEM
L
INT
L(3)
(4)
(4)
ZZ
L
ZZ
R
NOTES:
CONTROL
LOGIC
1. Address A
18
x is a NC for IDT70T631.
2.
BUSY
is an input as a Slave (M/S=V
IL
) and an output when it is a Master (M/S=V
IH
).
3
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
4. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. OPTx,
INTx,
M/S and the
sleep mode pins themselves (ZZx) are not affected during sleep mode.
BUSY
R(2,3)
M/S
SEM
R
INT
R(3)
ZZ
5670 drw 01
NOVEMBER 2017
DSC-5670/10
1
©2017 Integrated Device Technology, Inc.

IDT70T631S12DD相似产品对比

IDT70T631S12DD IDT70T631S12DDI IDT70T633S12DDI IDT70T633S12DD IDT70T633S10DD IDT70T633S15DD IDT70T631S15DD IDT70T631S10DD
描述 Dual-Port SRAM, 256KX18, 12ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144 Dual-Port SRAM, 256KX18, 12ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144 Dual-Port SRAM, 512KX18, 12ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144 Dual-Port SRAM, 512KX18, 12ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144 Dual-Port SRAM, 512KX18, 10ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144 Dual-Port SRAM, 512KX18, 15ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144 Dual-Port SRAM, 256KX18, 15ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144 Dual-Port SRAM, 256KX18, 10ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
零件包装代码 QFP QFP QFP QFP QFP QFP QFP QFP
包装说明 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144
针数 144 144 144 144 144 144 144 144
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN代码 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
最长访问时间 12 ns 12 ns 12 ns 12 ns 10 ns 15 ns 15 ns 10 ns
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 S-PQFP-G144 S-PQFP-G144 S-PQFP-G144 S-PQFP-G144 S-PQFP-G144 S-PQFP-G144 S-PQFP-G144 S-PQFP-G144
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 e0
长度 20 mm 20 mm 20 mm 20 mm 20 mm 20 mm 20 mm 20 mm
内存密度 4718592 bit 4718592 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit 4718592 bit 4718592 bit
内存集成电路类型 DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM
内存宽度 18 18 18 18 18 18 18 18
湿度敏感等级 4 4 4 4 4 4 4 4
功能数量 1 1 1 1 1 1 1 1
端口数量 2 2 2 2 2 2 2 2
端子数量 144 144 144 144 144 144 144 144
字数 262144 words 262144 words 524288 words 524288 words 524288 words 524288 words 262144 words 262144 words
字数代码 256000 256000 512000 512000 512000 512000 256000 256000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 85 °C 85 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 256KX18 256KX18 512KX18 512KX18 512KX18 512KX18 256KX18 256KX18
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LFQFP LFQFP LFQFP LFQFP LFQFP LFQFP LFQFP LFQFP
封装等效代码 QFP144,.87SQ,20 QFP144,.87SQ,20 QFP144,.87SQ,20 QFP144,.87SQ,20 QFP144,.87SQ,20 QFP144,.87SQ,20 QFP144,.87SQ,20 QFP144,.87SQ,20
封装形状 SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE
封装形式 FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 225 225 225 225 225 225 225 225
电源 2.5,2.5/3.3 V 2.5,2.5/3.3 V 2.5,2.5/3.3 V 2.5,2.5/3.3 V 2.5,2.5/3.3 V 2.5,2.5/3.3 V 2.5,2.5/3.3 V 2.5,2.5/3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm
最大待机电流 0.01 A 0.02 A 0.02 A 0.01 A 0.01 A 0.01 A 0.01 A 0.01 A
最小待机电流 2.4 V 2.4 V 2.4 V 2.4 V 2.4 V 2.4 V 2.4 V 2.4 V
最大压摆率 0.355 mA 0.395 mA 0.395 mA 0.355 mA 0.405 mA 0.305 mA 0.305 mA 0.405 mA
最大供电电压 (Vsup) 2.6 V 2.6 V 2.6 V 2.6 V 2.6 V 2.6 V 2.6 V 2.6 V
最小供电电压 (Vsup) 2.4 V 2.4 V 2.4 V 2.4 V 2.4 V 2.4 V 2.4 V 2.4 V
标称供电电压 (Vsup) 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
表面贴装 YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL INDUSTRIAL INDUSTRIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15)
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子节距 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm
端子位置 QUAD QUAD QUAD QUAD QUAD QUAD QUAD QUAD
处于峰值回流温度下的最长时间 30 30 30 30 30 30 30 30
宽度 20 mm 20 mm 20 mm 20 mm 20 mm 20 mm 20 mm 20 mm
Base Number Matches - 1 1 1 1 1 - -
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