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IDT70T633S12DDI: 产品描述Dual-Port SRAM, 512KX18, 12ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144; 产品类别存储存储; 文件大小231KB，共27页; 制造商IDT (Integrated Device Technology)

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IDT70T633S12DDI概述

Dual-Port SRAM, 512KX18, 12ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144

IDT70T633S12DDI规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	QFP
包装说明	20 X 20 MM, 1.40 MM HEIGHT, TQFP-144
针数	144
Reach Compliance Code	not_compliant
ECCN代码	3A991.B.2.A
最长访问时间	12 ns
I/O 类型	COMMON
JESD-30 代码	S-PQFP-G144
JESD-609代码	e0
长度	20 mm
内存密度	9437184 bit
内存集成电路类型	DUAL-PORT SRAM
内存宽度	18
湿度敏感等级	4
功能数量	1
端口数量	2
端子数量	144
字数	524288 words
字数代码	512000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	512KX18
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	LFQFP
封装等效代码	QFP144,.87SQ,20
封装形状	SQUARE
封装形式	FLATPACK, LOW PROFILE, FINE PITCH
并行/串行	PARALLEL
峰值回流温度（摄氏度）	225
电源	2.5,2.5/3.3 V
认证状态	Not Qualified
座面最大高度	1.6 mm
最大待机电流	0.02 A
最小待机电流	2.4 V
最大压摆率	0.395 mA
最大供电电压 (Vsup)	2.6 V
最小供电电压 (Vsup)	2.4 V
标称供电电压 (Vsup)	2.5 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Lead (Sn85Pb15)
端子形式	GULL WING
端子节距	0.5 mm
端子位置	QUAD
处于峰值回流温度下的最长时间	30
宽度	20 mm
Base Number Matches	1

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Features

◆

LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 2018

◆

HIGH-SPEED 2.5V

IDT70T633/1S

512/256K x 18

ASYNCHRONOUS DUAL-PORT

STATIC RAM

WITH 3.3V 0R 2.5V INTERFACE

Full hardware support of semaphore signaling between

ports on-chip

Fully asynchronous operation from either port

Separate byte controls for multiplexed bus and bus

matching compatibility

Sleep Mode Inputs on both ports

Supports JTAG features compliant to IEEE 1149.1 in

BGA-208 and BGA-256 packages

Single 2.5V (±100mV) power supply for core

LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)

power supply for I/Os and control signals on each port

Available in a 256-ball Ball Grid Array and 208-ball fine pitch

Ball Grid Array

Industrial temperature range (–40°C to +85°C) is available

for selected speeds

Green parts available, see ordering information

◆

Functional Block Diagram

True Dual-Port memory cells which allow simultaneous

access of the same memory location

High-speed access

– Commercial: 10/12/15ns (max.)

– Industrial: 10/12ns (max.)

RapidWrite Mode simplifies high-speed consecutive write

cycles

Dual chip enables allow for depth expansion without

external logic

IDT70T633/1 easily expands data bus width to 36 bits or

more using the Master/Slave select when cascading more

than one device

M/S = V

for

BUSY

output flag on Master,

M/S = V

for

BUSY

input on Slave

Busy and Interrupt Flags

On-chip port arbitration logic

◆

Dout0-8_L

Dout9-17_L

Dout0-8_R

Dout9-17_R

512/256K x 18

MEMORY

ARRAY

I/O

- I/O

17L

Din_L

Din_R

I/O

- I/O

17R

18L

(1)

Address

Decoder

ADDR_L

ADDR_R

Address

Decoder

18R

(1)

TDI

ARBITRATION

INTERRUPT

SEMAPHORE

LOGIC

TDO

JTAG

TCK

TMS

TRST

R/W

BUSY

L(2,3)

SEM

INT

L(3)

(4)

NOTES:

CONTROL

LOGIC

1. Address A

x is a NC for IDT70T631.

BUSY

is an input as a Slave (M/S=V

) and an output when it is a Master (M/S=V

BUSY

and

INT

are non-tri-state totem-pole outputs (push-pull).

4. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. OPTx,

INTx,

M/S and the

sleep mode pins themselves (ZZx) are not affected during sleep mode.

BUSY

R(2,3)

M/S

SEM

INT

R(3)

5670 drw 01

NOVEMBER 2017

DSC-5670/10

IDT70T633S12DDI相似产品对比

	IDT70T633S12DDI	IDT70T631S12DDI	IDT70T633S12DD	IDT70T633S10DD	IDT70T633S15DD	IDT70T631S12DD	IDT70T631S15DD	IDT70T631S10DD
描述	Dual-Port SRAM, 512KX18, 12ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144	Dual-Port SRAM, 256KX18, 12ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144	Dual-Port SRAM, 512KX18, 12ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144	Dual-Port SRAM, 512KX18, 10ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144	Dual-Port SRAM, 512KX18, 15ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144	Dual-Port SRAM, 256KX18, 12ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144	Dual-Port SRAM, 256KX18, 15ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144	Dual-Port SRAM, 256KX18, 10ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
零件包装代码	QFP	QFP	QFP	QFP	QFP	QFP	QFP	QFP
包装说明	20 X 20 MM, 1.40 MM HEIGHT, TQFP-144	20 X 20 MM, 1.40 MM HEIGHT, TQFP-144	20 X 20 MM, 1.40 MM HEIGHT, TQFP-144	20 X 20 MM, 1.40 MM HEIGHT, TQFP-144	20 X 20 MM, 1.40 MM HEIGHT, TQFP-144	20 X 20 MM, 1.40 MM HEIGHT, TQFP-144	20 X 20 MM, 1.40 MM HEIGHT, TQFP-144	20 X 20 MM, 1.40 MM HEIGHT, TQFP-144
针数	144	144	144	144	144	144	144	144
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	12 ns	12 ns	12 ns	10 ns	15 ns	12 ns	15 ns	10 ns
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	S-PQFP-G144	S-PQFP-G144	S-PQFP-G144	S-PQFP-G144	S-PQFP-G144	S-PQFP-G144	S-PQFP-G144	S-PQFP-G144
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0
长度	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm
内存密度	9437184 bit	4718592 bit	9437184 bit	9437184 bit	9437184 bit	4718592 bit	4718592 bit	4718592 bit
内存集成电路类型	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM
内存宽度	18	18	18	18	18	18	18	18
湿度敏感等级	4	4	4	4	4	4	4	4
功能数量	1	1	1	1	1	1	1	1
端口数量	2	2	2	2	2	2	2	2
端子数量	144	144	144	144	144	144	144	144
字数	524288 words	262144 words	524288 words	524288 words	524288 words	262144 words	262144 words	262144 words
字数代码	512000	256000	512000	512000	512000	256000	256000	256000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	85 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	512KX18	256KX18	512KX18	512KX18	512KX18	256KX18	256KX18	256KX18
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LFQFP	LFQFP	LFQFP	LFQFP	LFQFP	LFQFP	LFQFP	LFQFP
封装等效代码	QFP144,.87SQ,20	QFP144,.87SQ,20	QFP144,.87SQ,20	QFP144,.87SQ,20	QFP144,.87SQ,20	QFP144,.87SQ,20	QFP144,.87SQ,20	QFP144,.87SQ,20
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	FLATPACK, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	225	225	225	225	225	225	225	225
电源	2.5,2.5/3.3 V	2.5,2.5/3.3 V	2.5,2.5/3.3 V	2.5,2.5/3.3 V	2.5,2.5/3.3 V	2.5,2.5/3.3 V	2.5,2.5/3.3 V	2.5,2.5/3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm
最大待机电流	0.02 A	0.02 A	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A
最小待机电流	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V
最大压摆率	0.395 mA	0.395 mA	0.355 mA	0.405 mA	0.305 mA	0.355 mA	0.305 mA	0.405 mA
最大供电电压 (Vsup)	2.6 V	2.6 V	2.6 V	2.6 V	2.6 V	2.6 V	2.6 V	2.6 V
最小供电电压 (Vsup)	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V
标称供电电压 (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子面层	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm
端子位置	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
处于峰值回流温度下的最长时间	30	30	30	30	30	30	30	30
宽度	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm
Base Number Matches	1	1	1	1	1	-	-	-

IDT70T633S12DDI

IDT70T633S12DDI概述

IDT70T633S12DDI规格参数

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IDT70T633S12DDI相似产品对比

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