D Latch, 1-Func, 8-Bit, CMOS, CDIP20
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) |
| 包装说明 | DIP, DIP20,.3 |
| Reach Compliance Code | not_compliant |
| JESD-30 代码 | R-XDIP-T20 |
| JESD-609代码 | e0 |
| 逻辑集成电路类型 | D LATCH |
| 最大I（ol） | 0.014 A |
| 位数 | 8 |
| 功能数量 | 1 |
| 端子数量 | 20 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 输出特性 | 3-STATE |
| 封装主体材料 | CERAMIC |
| 封装代码 | DIP |
| 封装等效代码 | DIP20,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 峰值回流温度（摄氏度） | 225 |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 筛选级别 | 38535Q/M;38534H;883B |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | 30 |
| IDT54AHCT573DB | 5962-01-305-5389 | IDT54AHCT573EB | IDT54AHCT573LB | 74AHCT573D | 74AHCT573L | IDT74AHCT573L | |
|---|---|---|---|---|---|---|---|
| 描述 | D Latch, 1-Func, 8-Bit, CMOS, CDIP20 | D Latch, 1-Func, 8-Bit, CMOS, CDIP20 | D Latch, 1-Func, 8-Bit, CMOS, CDFP20 | D Latch, 1-Func, 8-Bit, CMOS, CQCC20 | D Latch, 1-Func, 8-Bit, CMOS, CDIP20 | D Latch, 1-Func, 8-Bit, CMOS, CQCC20 | D Latch, 1-Func, 8-Bit, CMOS, CQCC20 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | _compli | not_compliant | not_compliant |
| JESD-30 代码 | R-XDIP-T20 | R-XDIP-T20 | R-XDFP-F20 | S-XQCC-N20 | R-XDIP-T20 | S-XQCC-N20 | S-XQCC-N20 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 逻辑集成电路类型 | D LATCH | D LATCH | D LATCH | D LATCH | BUS DRIVER | D LATCH | D LATCH |
| 最大I（ol） | 0.014 A | 0.014 A | 0.014 A | 0.014 A | 0.024 A | 0.024 A | 0.024 A |
| 位数 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 20 | 20 | 20 | 20 | 20 | 20 | 20 |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 70 °C | 70 °C | 70 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | - | - | - |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC |
| 封装代码 | DIP | DIP | DFP | QCCN | DIP | QCCN | QCCN |
| 封装等效代码 | DIP20,.3 | DIP20,.3 | FL20,.3 | LCC20,.35SQ | DIP20,.3 | LCC20,.35SQ | LCC20,.35SQ |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | SQUARE | RECTANGULAR | SQUARE | SQUARE |
| 封装形式 | IN-LINE | IN-LINE | FLATPACK | CHIP CARRIER | IN-LINE | CHIP CARRIER | CHIP CARRIER |
| 峰值回流温度（摄氏度） | 225 | 225 | 260 | 225 | 260 | 260 | 260 |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | YES | YES | NO | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | TIN LEAD | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | FLAT | NO LEAD | THROUGH-HOLE | NO LEAD | NO LEAD |
| 端子节距 | 2.54 mm | 2.54 mm | 1.27 mm | 1.27 mm | 2.54 mm | 1.27 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | QUAD | DUAL | QUAD | QUAD |
| 处于峰值回流温度下的最长时间 | 30 | 30 | 6 | 30 | 6 | 6 | 6 |
| 厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | - | - |
| 包装说明 | DIP, DIP20,.3 | - | DFP, FL20,.3 | QCCN, LCC20,.35SQ | DIP, DIP20,.3 | QCCN, LCC20,.35SQ | QCCN, LCC20,.35SQ |
| 筛选级别 | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | - | - | - |
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