JMnic
Product Specification
Silicon PNP Power Transistors
2SA1116
DESCRIPTION
・With
TO-3 package
・Complement
to type 2SC2607
APPLICATIONS
・For
power switching amplifier and
general purpose applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-200
-200
-6
-15
-5
150
150
-65~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SA1116
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-50mA ;I
B
=0
-200
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-10A; I
B
=-1A
-3.0
V
I
CBO
Collector cut-off current
V
CB
=-200V; I
E
=0
-0.1
mA
I
EBO
Emitter cut-off current
V
EB
=-6V; I
C
=0
-0.1
mA
h
FE
DC current gain
I
C
=-5A ; V
CE
=-4V
30
f
T
Transition frequency
I
C
=-0.5A ; V
CE
=-12V
20
MHz
Switching times resistive load
t
r
Rise time
I
C
=-5.0A I
B1
=-I
B2
=-0.5A
R
L
=12Ω;V
CC
=-60V
0.3
μs
t
s
Storage time
0.9
μs
t
f
Fall time
0.2
μs
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1116
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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