RF Small Signal Bipolar Transistor, 0.037A I(C), 5-Element, Ultra High Frequency Band, Silicon, PNP, MS-012AC
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | Harris |
包装说明 | SMALL OUTLINE, R-PDSO-G16 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
其他特性 | LOW NOISE |
最大集电极电流 (IC) | 0.037 A |
集电极-发射极最大电压 | 8 V |
配置 | SEPARATE, 5 ELEMENTS |
最小直流电流增益 (hFE) | 20 |
最高频带 | ULTRA HIGH FREQUENCY BAND |
JEDEC-95代码 | MS-012AC |
JESD-30 代码 | R-PDSO-G16 |
JESD-609代码 | e0 |
元件数量 | 5 |
端子数量 | 16 |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
极性/信道类型 | PNP |
认证状态 | Not Qualified |
表面贴装 | YES |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | GULL WING |
端子位置 | DUAL |
晶体管应用 | AMPLIFIER |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 5500 MHz |
VCEsat-Max | 0.5 V |
HFA3128B96 | HFA3046B96 | HFA3096B96 | HFA3127B96 | |
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描述 | RF Small Signal Bipolar Transistor, 0.037A I(C), 5-Element, Ultra High Frequency Band, Silicon, PNP, MS-012AC | RF Small Signal Bipolar Transistor, 0.037A I(C), 5-Element, Ultra High Frequency Band, Silicon, NPN, MS-012AB | RF Small Signal Bipolar Transistor, 0.037A I(C), 5-Element, Ultra High Frequency Band, Silicon, NPN and PNP, MS-012AC | RF Small Signal Bipolar Transistor, 0.037A I(C), 5-Element, Ultra High Frequency Band, Silicon, NPN, MS-012AC |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 |
包装说明 | SMALL OUTLINE, R-PDSO-G16 | SMALL OUTLINE, R-PDSO-G14 | SMALL OUTLINE, R-PDSO-G16 | SMALL OUTLINE, R-PDSO-G16 |
Reach Compliance Code | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
其他特性 | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
最大集电极电流 (IC) | 0.037 A | 0.037 A | 0.037 A | 0.037 A |
集电极-发射极最大电压 | 8 V | 8 V | 8 V | 8 V |
配置 | SEPARATE, 5 ELEMENTS | COMPLEX | SEPARATE, 5 ELEMENTS | SEPARATE, 5 ELEMENTS |
最小直流电流增益 (hFE) | 20 | 40 | 40 | 40 |
最高频带 | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND |
JEDEC-95代码 | MS-012AC | MS-012AB | MS-012AC | MS-012AC |
JESD-30 代码 | R-PDSO-G16 | R-PDSO-G14 | R-PDSO-G16 | R-PDSO-G16 |
JESD-609代码 | e0 | e0 | e0 | e0 |
元件数量 | 5 | 5 | 5 | 5 |
端子数量 | 16 | 14 | 16 | 16 |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | PNP | NPN | NPN AND PNP | NPN |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | DUAL | DUAL |
晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 5500 MHz | 8000 MHz | 8000 MHz | 8000 MHz |
VCEsat-Max | 0.5 V | 0.5 V | 0.5 V | 0.5 V |
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