Standard SRAM, 32KX8, 20ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28
| 参数名称 | 属性值 |
| 厂商名称 | SAMSUNG(三星) |
| 零件包装代码 | SOJ |
| 包装说明 | SOJ, |
| 针数 | 28 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 最长访问时间 | 20 ns |
| JESD-30 代码 | R-PDSO-J28 |
| 内存密度 | 262144 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 28 |
| 字数 | 32768 words |
| 字数代码 | 32000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 32KX8 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | SOJ |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 并行/串行 | PARALLEL |
| 认证状态 | Not Qualified |
| 座面最大高度 | 3.76 mm |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子形式 | J BEND |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| 宽度 | 7.62 mm |
| KM68257CJ-200000 | KM68257CJ-120000 | KM68257CTG-12000 | KM68257CJ-150000 | KM68257CTG-20000 | KM68257CTG-15000 | |
|---|---|---|---|---|---|---|
| 描述 | Standard SRAM, 32KX8, 20ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 | Standard SRAM, 32KX8, 12ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 | Standard SRAM, 32KX8, 12ns, CMOS, PDSO28, 8 X 13.40 MM, PLASTIC, TSOP1-28 | Standard SRAM, 32KX8, 15ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 | Standard SRAM, 32KX8, 20ns, CMOS, PDSO28, 8 X 13.40 MM, PLASTIC, TSOP1-28 | Standard SRAM, 32KX8, 15ns, CMOS, PDSO28, 8 X 13.40 MM, PLASTIC, TSOP1-28 |
| 厂商名称 | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |
| 零件包装代码 | SOJ | SOJ | TSOP | SOJ | TSOP | TSOP |
| 包装说明 | SOJ, | SOJ, | TSOP1, | SOJ, | TSOP1, | TSOP1, |
| 针数 | 28 | 28 | 28 | 28 | 28 | 28 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最长访问时间 | 20 ns | 12 ns | 12 ns | 15 ns | 20 ns | 15 ns |
| JESD-30 代码 | R-PDSO-J28 | R-PDSO-J28 | R-PDSO-G28 | R-PDSO-J28 | R-PDSO-G28 | R-PDSO-G28 |
| 内存密度 | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 28 | 28 | 28 | 28 | 28 | 28 |
| 字数 | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words |
| 字数代码 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | SOJ | SOJ | TSOP1 | SOJ | TSOP1 | TSOP1 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 3.76 mm | 3.76 mm | 1.2 mm | 3.76 mm | 1.2 mm | 1.2 mm |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子形式 | J BEND | J BEND | GULL WING | J BEND | GULL WING | GULL WING |
| 端子节距 | 1.27 mm | 1.27 mm | 0.55 mm | 1.27 mm | 0.55 mm | 0.55 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 宽度 | 7.62 mm | 7.62 mm | 8 mm | 7.62 mm | 8 mm | 8 mm |
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