REVISIONS
LTR
DESCRIPTION
DATE
APPROVED
A
Updated boilerplate to reflect current requirements and made
corrections to table I and waveforms. Separated source bulletin from
the body of the drawing. - glg
01-01-30
Raymond Monnin
THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED.
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
A
15
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16
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17
A
18
REV
SHEET
PREPARED BY
Kenneth Rice
CHECKED BY
Charles Reusing
A
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A
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DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY All DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
APPROVED BY
Monica L. Poelking
MICROCIRCUIT, MEMORY, DIGITAL, CMOS,
2K X 9 FIFO, MONOLITHIC SILICON
DRAWING APPROVAL DATE
27 March 1990
REVISION LEVEL
SIZE
A
A
SHEET
CAGE CODE
67268
1 OF
18
5962-89567
DSCC FORM 2233
APR 97
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
5962-E180-01
1. SCOPE
1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in
accordance with MIL-PRF-38535, appendix A.
1.2 Part or Identifying Number (PIN). The complete PIN shall be as shown in the following example:
5962-89567
|
|
|
Drawing number
01
|
|
|
Device type
(see 1.2.1)
X
|
|
|
Case outline
(see 1.2.2)
X
|
|
|
Lead finish
(see 1.2.3)
1.2.1 Device type(s). The device type(s) shall identify the circuit function as follows:
Device type
01
02
03
04
05
Generic number
7203
7203
7203
7203
7203
Circuit
2K X 9-bit parallel FIFO
2K X 9-bit parallel FIFO
2K X 9-bit parallel FIFO
2K X 9-bit parallel FIFO
2K X 9-bit parallel FIFO
Access time
120 ns
80 ns
65 ns
50 ns
40 ns
1.2.2 Case outline(s). The case outline(s) shall be as designated in MIL-STD-1835, and as follows:
Outline letter
X
Y
Z
Descriptive designator
GDIP1-T28 or CDIP2-T28
GDFP2-F28
CQCC1-N32
Terminals
28
28
32
Package style
dual-in-line package
flat package
rectangular chip carrier
1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A.
1.3 Absolute maximum ratings.
Terminal voltage with respect to ground...............................
DC output current .................................................................
Storage temperature range ..................................................
Maximum power dissipation (P
D
):.........................................
Lead temperature (soldering, 10 seconds)...........................
Thermal resistance, junction-to-case (
"
JC
) ..........................
Junction temperature (T
J
) .....................................................
1.4 Recommended operating conditions.
Supply voltage range (V
CC
)................................................... +4.5 V dc to +5.5 V dc
Minimum high level input voltage (V
IH
) ................................. 2.2 V dc
Maximum low level input voltage (V
IL
) ................................. +0.8 V dc 2/
Case operating temperature range (T
C
) ............................... -55
G
C to +125
G
C
-0.5 V dc to +7.0 V dc
50 mA
-65
G
C to +150
G
C
1.0 W
+260
G
C
See MIL-STD-1835
+150
G
C 1/
1/ Maximum junction temperature may be increased to +175
G
C during burn-in and steady state life.
2/ 1.5 V undershoots are allowed for 10 ns once per cycle.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
A
5962-89567
SHEET
2
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the
issue listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto,
cited in the solicitation.
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
STANDARDS
DEPARTMENT OF DEFENSE
MIL-STD-883 - Test Method Standard Microcircuits.
MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.
HANDBOOKS
DEPARTMENT OF DEFENSE
MIL-HDBK-103 - List of Standard Microcircuit Drawings (SMD's).
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the
text of this drawing shall take precedence. Nothing in this document, however, supersedes applicable laws and regulations
unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-
JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer
Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-
38535 may be processed as QML product in accordance with the manufacturer's approved program plan and qualifying activity
approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan may make
modifications to the requirements herein. These modifications shall not affect the PIN as described herein. A "Q" or "QML"
certification mark in accordance with MIL-PRF-38535 is required to identify when the QML flow option is used.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535, appendix A and herein.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.2 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Truth table. The truth table shall be as specified on figure 2.
3.2.4 Die overcoat. Polyimide and silicone coatings are allowable as an overcoat on the die for alpha particle protection
provided that each coated microcircuit inspection lot (see MIL-PRF-38535, appendix A) shall be subjected to and pass the
Internal Water-Vapor Content test (test method 1018 of MIL-STD-883). The frequency of the internal water vapor testing may
not be decreased unless approved by the preparing activity.
3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are
as specified in table I and shall apply over the full case operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical
tests for each subgroup are described in table I.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
A
5962-89567
SHEET
3
TABLE I. Electrical performance characteristics.
|
|Symbol
|
|
|
|
|I
LI
|
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|I
LO
|
|
|V
OL
|
|
|V
OH
|
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|I
CC1
|
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|I
CC2
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|I
CC3
|
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|C
I N
|
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|C
OUT
|
|
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Conditions
|
-55
G
C < T
C
< +125
G
C
|
V
SS
= 0 V
|
4.5 V < V
CC
< 5.5 V
|
unless otherwise specified
|
|
0.0 V < V
IN
< V
CC
|
|
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0.0 V < V
OUT
< V
CC
, R > V
IH
|
|
V
CC
= 4.5 V, I
OL
= 8.0 mA
|
V
IL
= 0.8 V, V
IH
= 2.2 V
|
|
V
CC
= 4.5 V, I
OH
= -2.0 mA
|
V
IL
= 0.8 V, V
IH
= 2.2 V
|
|
|
f = f
s
, outputs open
|
V
CC
= 5.5 V
|
|
V
CC
= 5.5 V,
|
f = 15.3 MHz, outputs open
|
|
R = W = RS = FL/RT = V
IH
,
|
outputs open
|
|
|
All inputs = V
CC
- 0.2 V,
|
outputs open
|
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V
I
= 0 V , f = 1.0 MHz
|
T
A
= +25
G
C, See 4.3.1c
|
|
|
V
O
= 0 V , f = 1.0 MHz
|
T
A
= +25
G
C, See 4.3.1c
|
|
|
See 4.3.1d.
|
|
|
|Group
A
|Device
|subgroups |
types
|
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|
|1,
2, 3
|
All
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|1,
2, 3
|
All
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|1,
2, 3
|
All
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|1,
2, 3
|
All
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|1,
2, 3
|
01-04
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05
|
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|1,
2, 3
|
|
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All
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|1,
2, 3
|
All
|
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4
|
All
|
|
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|
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4
|
All
|
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|7,
8A, 8B
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All
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Limits
|
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Min
|
Max
|
|
|
-10
|
10
|
|
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-10
|
10
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0.4
|
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2.4
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150
|
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150
|
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25
|
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4.0
|
|
|
|
|
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8
|
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12
|
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Unit
|
|
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2
A
|
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2
A
|
|
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V
|
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|
V
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|
mA
|
|
|
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|
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mA
|
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|
mA
|
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|
pF
|
|
|
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pF
|
|
|
|
|
Test
Input leakage current
Output leakage current
Output low voltage
Output high voltage
Operating supply
current
Standby power supply
current
Power down current
Input capacitance
Output capacitance
with output deselected
Functional tests
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
A
5962-89567
SHEET
4
TABLE I. Electrical performance characteristics.
Test
|
|Symbol
|
|
|
|
|f
S
|
|
|
|
|t
RC
|
|
|
|
|t
A
|
|
|
|
|t
RR
|
|
|t
RPW
|
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|t
RLZ
|
1/
|
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|t
WLZ
|1/
2/
|
|
|t
DV
|
|
|t
RHZ
|
1/
|
|
|t
WC
|
|
|
|
Conditions
|
-55
G
C < T
C
< +125
G
C
|
V
SS
= 0 V
|
4.5 V < V
CC
< 5.5 V
|
unless otherwise specified
|
|
|
|
|
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|
C
L
= 30 pF
|
See figures 4 and 5
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|Group
A
|Device
|subgroups |
types
|
|
|
|
|
|
01
|9,
10, 11
|
02
|
|
03
|
|
04
|
05
|
|
|
01
|9,
10, 11
|
02
|
|
03
|
|
04
|
05
|
|
|
01
|9,
10, 11
|
02
|
|
03
|
|
04
|
05
|
|
|
01,02
|9,
10, 11
|
03,04
|
05
|
|
|
01
|9,
10, 11
|
02
|
|
03
|
|
04
|
05
|
|
|
|9,
10, 11
|
01-04
|
|
|
05
|
|
|
|9,
10, 11
|
01-04
|
|
|
05
|
|
|
|9,
10, 11
|
All
|
|
|
|
01
|9,
10, 11
|
02,03,
|
|
04
|
05
|
|
|
01
|9,
10, 11
|
02
|
|
03
|
|
04
|
|
05
|
|
Limits
|
|
|
|
|
Min
|
Max
|
|
7.0
|
|
10
|
|
12.5
|
|
15
|
|
20
|
140
|
|
100
|
|
80
|
|
65
|
|
50
|
|
|
120
|
|
80
|
|
65
|
|
50
|
|
40
|
20
|
|
15
|
|
10
|
|
120
|
|
80
|
|
65
|
|
50
|
|
40
|
|
|
|
10
|
|
|
|
5.0
|
|
|
|
10
|
|
|
|
5.0
|
|
|
|
5.0
|
|
|
|
|
35
|
|
30
|
|
|
|
25
|
140
|
|
100
|
|
80
|
|
65
|
|
50
|
|
|
Unit
|
|
|
|
|
MHz
|
|
|
|
|
ns
|
|
|
|
|
ns
|
|
|
|
|
ns
|
|
|
ns
|
|
|
|
|
ns
|
|
|
|
ns
|
|
|
|
ns
|
|
|
ns
|
|
|
|
ns
|
|
|
Shift frequency
Read cycle time
Access time
Read recovery time
Read pulse width
Read pulse low to data
bus at low-Z
Write pulse low to data
bus at low-Z
Data valid from read
pulse high
Read pulse high to data
bus high-Z
Write cycle time
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
A
5962-89567
SHEET
5
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