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IS61ZB6432-7TQ: 产品描述ZBT SRAM, 64KX32, 7ns, CMOS, PQFP100, TQFP-100; 产品类别存储存储; 文件大小497KB，共13页; 制造商Integrated Silicon Solution ( ISSI )

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IS61ZB6432-7TQ概述

ZBT SRAM, 64KX32, 7ns, CMOS, PQFP100, TQFP-100

IS61ZB6432-7TQ规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	Integrated Silicon Solution ( ISSI )
零件包装代码	QFP
包装说明	TQFP-100
针数	100
Reach Compliance Code	compliant
ECCN代码	3A991.B.2.A
最长访问时间	7 ns
其他特性	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE
I/O 类型	COMMON
JESD-30 代码	R-PQFP-G100
JESD-609代码	e0
长度	20 mm
内存密度	2097152 bit
内存集成电路类型	ZBT SRAM
内存宽度	32
功能数量	1
端子数量	100
字数	65536 words
字数代码	64000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	64KX32
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	LQFP
封装等效代码	QFP100,.63X.87
封装形状	RECTANGULAR
封装形式	FLATPACK, LOW PROFILE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	240
电源	3.3 V
认证状态	Not Qualified
座面最大高度	1.6 mm
最大待机电流	0.06 A
最小待机电流	3 V
最大压摆率	0.21 mA
最大供电电压 (Vsup)	3.63 V
最小供电电压 (Vsup)	2.97 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子节距	0.65 mm
端子位置	QUAD
处于峰值回流温度下的最长时间	30
宽度	14 mm

IS61ZB6432-7TQ相似产品对比

	IS61ZB6432-7TQ	IS61ZB6432-5PQ	IS61ZB6432-6PQ	IS61ZB6432-5TQ	IS61ZB6432-7PQ	IS61ZB6432-8TQ	IS61ZB6432-8PQ	IS61ZB6432-6TQ
描述	ZBT SRAM, 64KX32, 7ns, CMOS, PQFP100, TQFP-100	ZBT SRAM, 64KX32, 5ns, CMOS, PQFP100, PLASTIC, QFP-100	ZBT SRAM, 64KX32, 6ns, CMOS, PQFP100, PLASTIC, QFP-100	ZBT SRAM, 64KX32, 5ns, CMOS, PQFP100, TQFP-100	ZBT SRAM, 64KX32, 7ns, CMOS, PQFP100, PLASTIC, QFP-100	ZBT SRAM, 64KX32, 8ns, CMOS, PQFP100, TQFP-100	ZBT SRAM, 64KX32, 8ns, CMOS, PQFP100, PLASTIC, QFP-100	ZBT SRAM, 64KX32, 6ns, CMOS, PQFP100, TQFP-100
是否无铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
零件包装代码	QFP	QFP	QFP	QFP	QFP	QFP	QFP	QFP
包装说明	TQFP-100	PLASTIC, QFP-100	PLASTIC, QFP-100	TQFP-100	PLASTIC, QFP-100	TQFP-100	PLASTIC, QFP-100	TQFP-100
针数	100	100	100	100	100	100	100	100
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	7 ns	5 ns	6 ns	5 ns	7 ns	8 ns	8 ns	6 ns
其他特性	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0
长度	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm
内存密度	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit
内存集成电路类型	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM
内存宽度	32	32	32	32	32	32	32	32
功能数量	1	1	1	1	1	1	1	1
端子数量	100	100	100	100	100	100	100	100
字数	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words
字数代码	64000	64000	64000	64000	64000	64000	64000	64000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	64KX32	64KX32	64KX32	64KX32	64KX32	64KX32	64KX32	64KX32
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LQFP	QFP	QFP	LQFP	QFP	LQFP	QFP	LQFP
封装等效代码	QFP100,.63X.87	QFP100,.7X.9	QFP100,.7X.9	QFP100,.63X.87	QFP100,.7X.9	QFP100,.63X.87	QFP100,.7X.9	QFP100,.63X.87
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLATPACK, LOW PROFILE	FLATPACK	FLATPACK	FLATPACK, LOW PROFILE	FLATPACK	FLATPACK, LOW PROFILE	FLATPACK	FLATPACK, LOW PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	240	240	240	240	240	240	240	240
电源	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.6 mm	3.22 mm	3.22 mm	1.6 mm	3.22 mm	1.6 mm	3.22 mm	1.6 mm
最大待机电流	0.06 A	0.06 A	0.06 A	0.06 A	0.06 A	0.06 A	0.06 A	0.06 A
最小待机电流	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
最大压摆率	0.21 mA	0.23 mA	0.22 mA	0.23 mA	0.21 mA	0.2 mA	0.2 mA	0.22 mA
最大供电电压 (Vsup)	3.63 V	3.63 V	3.63 V	3.63 V	3.63 V	3.63 V	3.63 V	3.63 V
最小供电电压 (Vsup)	2.97 V	2.97 V	2.97 V	2.97 V	2.97 V	2.97 V	2.97 V	2.97 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm
端子位置	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
处于峰值回流温度下的最长时间	30	30	30	30	30	30	30	30
宽度	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm

IS61ZB6432-7TQ

IS61ZB6432-7TQ概述

IS61ZB6432-7TQ规格参数

IS61ZB6432-7TQ相似产品对比

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