Rambus DRAM Module, 32MX36, CMOS, RIMM-232
参数名称 | 属性值 |
厂商名称 | SAMSUNG(三星) |
零件包装代码 | DMA |
包装说明 | DIMM, |
针数 | 232 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
访问模式 | BLOCK ORIENTED PROTOCOL |
其他特性 | SELF CONTAINED REFRESH |
JESD-30 代码 | R-XDMA-N232 |
内存密度 | 1207959552 bit |
内存集成电路类型 | RAMBUS DRAM MODULE |
内存宽度 | 36 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 232 |
字数 | 33554432 words |
字数代码 | 32000000 |
工作模式 | SYNCHRONOUS |
组织 | 32MX36 |
封装主体材料 | UNSPECIFIED |
封装代码 | DIMM |
封装形状 | RECTANGULAR |
封装形式 | MICROELECTRONIC ASSEMBLY |
认证状态 | Not Qualified |
自我刷新 | YES |
最大供电电压 (Vsup) | 2.63 V |
最小供电电压 (Vsup) | 2.37 V |
标称供电电压 (Vsup) | 2.5 V |
表面贴装 | NO |
技术 | CMOS |
端子形式 | NO LEAD |
端子位置 | DUAL |
MD18R1624AF0-CM8 | MD16R1628AF0-CM8 | MD18R1628AF0-CN9 | MD16R162GAF0-CM8 | MD16R1624AF0-CM8 | MD18R162GAF0-CM8 | MD18R162GAF0-CN9 | MD18R1628AF0-CM8 | MD18R1624AF0-CN9 | |
---|---|---|---|---|---|---|---|---|---|
描述 | Rambus DRAM Module, 32MX36, CMOS, RIMM-232 | Rambus DRAM Module, 64MX32, CMOS, RIMM-232 | Rambus DRAM Module, 64MX36, CMOS, RIMM-232 | Rambus DRAM Module, 128MX32, CMOS, RIMM-232 | Rambus DRAM Module, 32MX32, CMOS, RIMM-232 | Rambus DRAM Module, 128MX36, CMOS, RIMM-232 | Rambus DRAM Module, 128MX36, CMOS, RIMM-232 | Rambus DRAM Module, 64MX36, CMOS, RIMM-232 | Rambus DRAM Module, 32MX36, CMOS, RIMM-232 |
零件包装代码 | DMA | DMA | DMA | DMA | DMA | DMA | DMA | DMA | DMA |
包装说明 | DIMM, | DIMM, | DIMM, | DIMM, | DIMM, | DIMM, | DIMM, | DIMM, | DIMM, |
针数 | 232 | 232 | 232 | 232 | 232 | 232 | 232 | 232 | 232 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
访问模式 | BLOCK ORIENTED PROTOCOL | BLOCK ORIENTED PROTOCOL | BLOCK ORIENTED PROTOCOL | BLOCK ORIENTED PROTOCOL | BLOCK ORIENTED PROTOCOL | BLOCK ORIENTED PROTOCOL | BLOCK ORIENTED PROTOCOL | BLOCK ORIENTED PROTOCOL | BLOCK ORIENTED PROTOCOL |
其他特性 | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH | SELF CONTAINED REFRESH |
JESD-30 代码 | R-XDMA-N232 | R-XDMA-N232 | R-XDMA-N232 | R-XDMA-N232 | R-XDMA-N232 | R-XDMA-N232 | R-XDMA-N232 | R-XDMA-N232 | R-XDMA-N232 |
内存密度 | 1207959552 bit | 2147483648 bit | 2415919104 bit | 4294967296 bit | 1073741824 bit | 4831838208 bit | 4831838208 bit | 2415919104 bit | 1207959552 bit |
内存集成电路类型 | RAMBUS DRAM MODULE | RAMBUS DRAM MODULE | RAMBUS DRAM MODULE | RAMBUS DRAM MODULE | RAMBUS DRAM MODULE | RAMBUS DRAM MODULE | RAMBUS DRAM MODULE | RAMBUS DRAM MODULE | RAMBUS DRAM MODULE |
内存宽度 | 36 | 32 | 36 | 32 | 32 | 36 | 36 | 36 | 36 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 232 | 232 | 232 | 232 | 232 | 232 | 232 | 232 | 232 |
字数 | 33554432 words | 67108864 words | 67108864 words | 134217728 words | 33554432 words | 134217728 words | 134217728 words | 67108864 words | 33554432 words |
字数代码 | 32000000 | 64000000 | 64000000 | 128000000 | 32000000 | 128000000 | 128000000 | 64000000 | 32000000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
组织 | 32MX36 | 64MX32 | 64MX36 | 128MX32 | 32MX32 | 128MX36 | 128MX36 | 64MX36 | 32MX36 |
封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
封装代码 | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
自我刷新 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
最大供电电压 (Vsup) | 2.63 V | 2.63 V | 2.63 V | 2.63 V | 2.63 V | 2.63 V | 2.63 V | 2.63 V | 2.63 V |
最小供电电压 (Vsup) | 2.37 V | 2.37 V | 2.37 V | 2.37 V | 2.37 V | 2.37 V | 2.37 V | 2.37 V | 2.37 V |
标称供电电压 (Vsup) | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
厂商名称 | SAMSUNG(三星) | - | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved