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HYM7V75A801BLTZG-10P

产品描述Synchronous DRAM Module, 8MX72, 6ns, CMOS, SODIMM-144
产品类别存储    存储   
文件大小306KB,共14页
制造商SK Hynix(海力士)
官网地址http://www.hynix.com/eng/
下载文档 详细参数 选型对比 全文预览

HYM7V75A801BLTZG-10P概述

Synchronous DRAM Module, 8MX72, 6ns, CMOS, SODIMM-144

HYM7V75A801BLTZG-10P规格参数

参数名称属性值
厂商名称SK Hynix(海力士)
零件包装代码MODULE
包装说明DIMM, DIMM144,32
针数144
Reach Compliance Codecompliant
ECCN代码EAR99
访问模式FOUR BANK PAGE BURST
最长访问时间6 ns
其他特性AUTO/SELF REFRESH
最大时钟频率 (fCLK)100 MHz
I/O 类型COMMON
JESD-30 代码R-XDMA-N144
内存密度603979776 bit
内存集成电路类型SYNCHRONOUS DRAM MODULE
内存宽度72
功能数量1
端口数量1
端子数量144
字数8388608 words
字数代码8000000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织8MX72
输出特性3-STATE
封装主体材料UNSPECIFIED
封装代码DIMM
封装等效代码DIMM144,32
封装形状RECTANGULAR
封装形式MICROELECTRONIC ASSEMBLY
电源3.3 V
认证状态Not Qualified
刷新周期4096
自我刷新YES
最大待机电流0.018 A
最大压摆率1.62 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3 V
标称供电电压 (Vsup)3.3 V
表面贴装NO
技术CMOS
温度等级COMMERCIAL
端子形式NO LEAD
端子节距0.8 mm
端子位置DUAL

文档预览

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8Mx72 bits
PC100 SDRAM SO DIMM
based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh
HYM7V75A801B Z-Series
DESCRIPTION
The Hyundai HYM7V75A801B Z-Series are 8Mx72bits ECC Synchronous DRAM Modules. The modules are composed
of nine 8Mx8bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package and 2Kbit EEPROM in 8pin TSSOP
package on a 144pin glass-epoxy printed circuit board. A 0.22uF and a 0.0022uF decoupling capacitors per each
SDRAM are mounted on the PCB.
The HYM7V75A801B Z-Series are Small Outline Dual In-line Memory Modules suitable for easy interchange and
addition of 64Mbytes memory. The HYM7V75A801B Z-Series are offering fully synchronous operation referenced to a
positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths
are internally pipelined to achieve very high bandwidth.
FEATURES
PC100MHz support
144pin SDRAM SO DIMM
Serial Presence Detect with EEPROM
1.50” (38.10mm) Height PCB with Double Sided
components
Single 3.3
±
0.3V power supply
All devices pins are compatible with LVTTL interface
Data mask function by DQM
SDRAM internal banks : four banks
Module bank : one physical bank
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
-. 1, 2, 4, 8, or Full Page for Sequential Burst
-. 1, 2, 4 or 8 for Interleave Burst
Programmable /CAS Latency
-. 2, 3 Clocks
ORDERING INFORMATION
PART NO.
HYM7V75A801BTZG-8
HYM7V75A801BTZG-10P
HYM7V75A801BTZG-10S
HYM7V75A801BLTZG-8
HYM7V75A801BLTZG-10P
HYM7V75A801BLTZG-10S
MAX.
FREQUENCY
125MHz
100MHz
100MHz
125MHz
100MHz
100MHz
Low Power
4 Banks
4K
Normal
TSOP-II
Gold
INTERNAL
BANK
REF.
POWER
SDRAM
PACKAGE
PLATING
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume
any responsibility for use of circuits described. No patent licenses are implied.
Rev. 1.0/Jun.99
©1999
Hyundai Electronics

HYM7V75A801BLTZG-10P相似产品对比

HYM7V75A801BLTZG-10P HYM7V75A801BLTZG-8 HYM7V75A801BTZG-10S HYM7V75A801BTZG-8 HYM7V75A801BLTZG-10S HYM7V75A801BTZG-10P
描述 Synchronous DRAM Module, 8MX72, 6ns, CMOS, SODIMM-144 Synchronous DRAM Module, 8MX72, 6ns, CMOS, SODIMM-144 Synchronous DRAM Module, 8MX72, 6ns, CMOS, SODIMM-144 Synchronous DRAM Module, 8MX72, 6ns, CMOS, SODIMM-144 Synchronous DRAM Module, 8MX72, 6ns, CMOS, SODIMM-144 Synchronous DRAM Module, 8MX72, 6ns, CMOS, SODIMM-144
零件包装代码 MODULE MODULE MODULE MODULE MODULE MODULE
包装说明 DIMM, DIMM144,32 DIMM, DIMM144,32 DIMM, DIMM144,32 DIMM, DIMM144,32 DIMM, DIMM144,32 DIMM, DIMM144,32
针数 144 144 144 144 144 144
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
最长访问时间 6 ns 6 ns 6 ns 6 ns 6 ns 6 ns
其他特性 AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
最大时钟频率 (fCLK) 100 MHz 125 MHz 100 MHz 125 MHz 100 MHz 100 MHz
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 R-XDMA-N144 R-XDMA-N144 R-XDMA-N144 R-XDMA-N144 R-XDMA-N144 R-XDMA-N144
内存密度 603979776 bit 603979776 bit 603979776 bit 603979776 bit 603979776 bit 603979776 bit
内存集成电路类型 SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
内存宽度 72 72 72 72 72 72
功能数量 1 1 1 1 1 1
端口数量 1 1 1 1 1 1
端子数量 144 144 144 144 144 144
字数 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words
字数代码 8000000 8000000 8000000 8000000 8000000 8000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 8MX72 8MX72 8MX72 8MX72 8MX72 8MX72
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装代码 DIMM DIMM DIMM DIMM DIMM DIMM
封装等效代码 DIMM144,32 DIMM144,32 DIMM144,32 DIMM144,32 DIMM144,32 DIMM144,32
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
电源 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
刷新周期 4096 4096 4096 4096 4096 4096
自我刷新 YES YES YES YES YES YES
最大待机电流 0.018 A 0.018 A 0.018 A 0.018 A 0.018 A 0.018 A
最大压摆率 1.62 mA 1.8 mA 1.62 mA 1.8 mA 1.62 mA 1.62 mA
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 NO NO NO NO NO NO
技术 CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
端子节距 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
厂商名称 SK Hynix(海力士) - SK Hynix(海力士) SK Hynix(海力士) SK Hynix(海力士) SK Hynix(海力士)

 
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