Datasheet> 器件分类 > 分立半导体> 晶体管> RN2510(TE85L)

RN2510(TE85L): 产品描述TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal; 产品类别分立半导体晶体管; 文件大小284KB，共6页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN2510(TE85L)概述

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal

RN2510(TE85L)规格参数

参数名称	属性值
厂商名称	Toshiba(东芝)
包装说明	SMALL OUTLINE, R-PDSO-G5
针数	5
Reach Compliance Code	unknown
ECCN代码	EAR99
其他特性	BUILT-IN BIAS RESISTOR
最大集电极电流 (IC)	0.1 A
集电极-发射极最大电压	50 V
配置	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	120
JESD-30 代码	R-PDSO-G5
元件数量	2
端子数量	5
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	PNP
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	250 MHz

RN2510(TE85L)文档预览

RN2510,RN2511

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2510,RN2511

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Including twodevices in SMV (super mini type with 5 leads)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN1510 and RN1511

Unit: mm

Equivalent Circuit

SMV

JEDEC

―

JEITA

―

TOSHIBA

2-3L1A

Weight: 14 mg (typ.)

Rating

−50

−5

−100

300

150

−55

to150

Unit

°C

Absolute Maximum Ratings

(Ta = 25°C)

Characteristics

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

Symbol

CBO

CEO

EBO

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* Total rating

Equivalent Circuit

(top view)

2010-06-11

RN2510,RN2511

Electrical Characteristics

(Ta = 25°C)

Characteristics

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Input resistor

RN2510

RN2511

Symbol

CBO

EBO

CE (sat)

Test

Circuit

―

Test Condition

−50V,

= 0

−5V,

= 0

−5V,

−1mA

−5mA,

−0.25mA

−10V,

−5mA

−10V,

= 0, f = 1MHz

―

Min

―

120

―

3.29

Typ.

―

−0.1

200

4.7

Max

−100

400

−0.3

―

6.11

Unit

―

MHz

kΩ

2010-06-11

RN2510,RN2511

(Q1, Q2 Common)

2010-06-11

RN2510,RN2511

(Q1, Q2 Common)

DC CURRENT GAIN hFE

2010-06-11

RN2510,RN2511

Marking

Type Name

Marking

RN2510

RN2511

2010-06-11

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RN2510(TE85L)相似产品对比

	RN2510(TE85L)	RN2510(TE85R)	RN2510TE85L	RN2510(TE85L2)	RN2510TE85R
描述	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
厂商名称	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)
包装说明	SMALL OUTLINE, R-PDSO-G5	SMALL OUTLINE, R-PDSO-G5	SMALL OUTLINE, R-PDSO-G5	SMALL OUTLINE, R-PDSO-G5	SMALL OUTLINE, R-PDSO-G5
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
集电极-发射极最大电压	50 V	50 V	50 V	50 V	50 V
配置	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	120	120	120	120	120
JESD-30 代码	R-PDSO-G5	R-PDSO-G5	R-PDSO-G5	R-PDSO-G5	R-PDSO-G5
元件数量	2	2	2	2	2
端子数量	5	5	5	5	5
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	PNP	PNP	PNP	PNP	PNP
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz
针数	5	5	-	5	-
ECCN代码	EAR99	EAR99	-	EAR99	-
其他特性	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR	-	BUILT-IN BIAS RESISTOR	-

RN2510(TE85L)

RN2510(TE85L)概述

RN2510(TE85L)规格参数

RN2510(TE85L)文档预览

RN2510(TE85L)相似产品对比

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