1MX16 SYNCHRONOUS DRAM, 10ns, CDFP50, 0.650 INCH, CERAMIC, DFP-50
| 参数名称 | 属性值 |
| 厂商名称 | Texas Instruments(德州仪器) |
| 零件包装代码 | DFP |
| 包装说明 | DFP, |
| 针数 | 50 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 访问模式 | DUAL BANK PAGE BURST |
| 最长访问时间 | 10 ns |
| 其他特性 | AUTO REFRESH |
| JESD-30 代码 | R-CDFP-F50 |
| 长度 | 21 mm |
| 内存密度 | 16777216 bit |
| 内存集成电路类型 | SYNCHRONOUS DRAM |
| 内存宽度 | 16 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 50 |
| 字数 | 1048576 words |
| 字数代码 | 1000000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 1MX16 |
| 输出特性 | 3-STATE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DFP |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLATPACK |
| 认证状态 | Not Qualified |
| 刷新周期 | 4096 |
| 座面最大高度 | 3.55 mm |
| 最大供电电压 (Vsup) | 3.465 V |
| 最小供电电压 (Vsup) | 3.135 V |
| 标称供电电压 (Vsup) | 3.3 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子形式 | FLAT |
| 端子节距 | 0.8 mm |
| 端子位置 | DUAL |
| 宽度 | 16.5 mm |
| SMJ626162-20HKDM | SMJ626162-15HKD | SMJ626162-15HKDM | SMJ626162-12HKDM | SMJ626162-12HKD | |
|---|---|---|---|---|---|
| 描述 | 1MX16 SYNCHRONOUS DRAM, 10ns, CDFP50, 0.650 INCH, CERAMIC, DFP-50 | 1MX16 SYNCHRONOUS DRAM, 9ns, CDFP50, 0.650 INCH, CERAMIC, DFP-50 | 1MX16 SYNCHRONOUS DRAM, 9ns, CDFP50, 0.650 INCH, CERAMIC, DFP-50 | 1MX16 SYNCHRONOUS DRAM, 8ns, CDFP50, 0.650 INCH, CERAMIC, DFP-50 | 1MX16 SYNCHRONOUS DRAM, 8ns, CDFP50, 0.650 INCH, CERAMIC, DFP-50 |
| 厂商名称 | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) |
| 零件包装代码 | DFP | DFP | DFP | DFP | DFP |
| 包装说明 | DFP, | DFP, FL50,.67,32 | DFP, | DFP, | DFP, FL50,.67,32 |
| 针数 | 50 | 50 | 50 | 50 | 50 |
| Reach Compliance Code | unknown | not_compliant | unknown | unknown | _compli |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST |
| 最长访问时间 | 10 ns | 9 ns | 9 ns | 8 ns | 8 ns |
| 其他特性 | AUTO REFRESH | AUTO REFRESH | AUTO REFRESH | AUTO REFRESH | AUTO REFRESH |
| JESD-30 代码 | R-CDFP-F50 | R-CDFP-F50 | R-CDFP-F50 | R-CDFP-F50 | R-CDFP-F50 |
| 长度 | 21 mm | 21 mm | 21 mm | 21 mm | 21 mm |
| 内存密度 | 16777216 bit | 16777216 bit | 16777216 bit | 16777216 bit | 16777216 bi |
| 内存集成电路类型 | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM |
| 内存宽度 | 16 | 16 | 16 | 16 | 16 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 50 | 50 | 50 | 50 | 50 |
| 字数 | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words |
| 字数代码 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 组织 | 1MX16 | 1MX16 | 1MX16 | 1MX16 | 1MX16 |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DFP | DFP | DFP | DFP | DFP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLATPACK | FLATPACK | FLATPACK | FLATPACK | FLATPACK |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 3.55 mm | 3.55 mm | 3.55 mm | 3.55 mm | 3.55 mm |
| 最大供电电压 (Vsup) | 3.465 V | 3.465 V | 3.465 V | 3.465 V | 3.465 V |
| 最小供电电压 (Vsup) | 3.135 V | 3.135 V | 3.135 V | 3.135 V | 3.135 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子形式 | FLAT | FLAT | FLAT | FLAT | FLAT |
| 端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL |
| 宽度 | 16.5 mm | 16.5 mm | 16.5 mm | 16.5 mm | 16.5 mm |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | - | 3-STATE |
| 刷新周期 | 4096 | 4096 | 4096 | - | 4096 |
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