DDR DRAM, 128MX64, 0.255ns, CMOS, PZMA240, ROHS COMPLAINT, DIMM-240
参数名称 | 属性值 |
是否Rohs认证 | 符合 |
厂商名称 | SK Hynix(海力士) |
零件包装代码 | DIMM |
包装说明 | DIMM, DIMM240,40 |
针数 | 240 |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
访问模式 | SINGLE BANK PAGE BURST |
最长访问时间 | 0.255 ns |
其他特性 | AUTO/SELF REFRESH |
最大时钟频率 (fCLK) | 667 MHz |
I/O 类型 | COMMON |
JESD-30 代码 | R-PZMA-N240 |
JESD-609代码 | e1 |
长度 | 133.35 mm |
内存密度 | 8589934592 bit |
内存集成电路类型 | DDR DRAM |
内存宽度 | 64 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 240 |
字数 | 134217728 words |
字数代码 | 128000000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 85 °C |
最低工作温度 | |
组织 | 128MX64 |
输出特性 | 3-STATE |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | DIMM |
封装等效代码 | DIMM240,40 |
封装形状 | RECTANGULAR |
封装形式 | MICROELECTRONIC ASSEMBLY |
峰值回流温度(摄氏度) | 260 |
电源 | 1.5 V |
认证状态 | Not Qualified |
刷新周期 | 8192 |
自我刷新 | YES |
最大供电电压 (Vsup) | 1.575 V |
最小供电电压 (Vsup) | 1.425 V |
标称供电电压 (Vsup) | 1.5 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | OTHER |
端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式 | NO LEAD |
端子节距 | 1 mm |
端子位置 | ZIG-ZAG |
处于峰值回流温度下的最长时间 | 20 |
HMT112U6DFR8C-H9 | HMT125U6DFR8C-H9 | HMT112U6DFR8C-PB | HMT125U6DFR8C-PB | HMT125U6DFR8C-G7/H9/PB | HMT112U6DFR8C-G7 | |
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描述 | DDR DRAM, 128MX64, 0.255ns, CMOS, PZMA240, ROHS COMPLAINT, DIMM-240 | DDR DRAM, 256MX64, CMOS, PZMA240, ROHS COMPLAINT, DIMM-240 | DDR DRAM, 128MX64, 0.225ns, CMOS, PZMA240, ROHS COMPLAINT, DIMM-240 | DDR DRAM, 256MX64, CMOS, PZMA240, ROHS COMPLAINT, DIMM-240 | DDR DRAM, 256MX64, CMOS, ROHS COMPLIANT, DIMM-240 | DDR DRAM, 128MX64, 0.3ns, CMOS, PZMA240, ROHS COMPLAINT, DIMM-240 |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
厂商名称 | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) |
零件包装代码 | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM |
包装说明 | DIMM, DIMM240,40 | DIMM, DIMM240,40 | DIMM, DIMM240,40 | DIMM, DIMM240,40 | DIMM, | DIMM, DIMM240,40 |
针数 | 240 | 240 | 240 | 240 | 240 | 240 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compli |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
访问模式 | SINGLE BANK PAGE BURST | DUAL BANK PAGE BURST | SINGLE BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | SINGLE BANK PAGE BURST |
其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
JESD-30 代码 | R-PZMA-N240 | R-PZMA-N240 | R-PZMA-N240 | R-PZMA-N240 | R-XDMA-N240 | R-PZMA-N240 |
长度 | 133.35 mm | 133.35 mm | 133.35 mm | 133.35 mm | 133.35 mm | 133.35 mm |
内存密度 | 8589934592 bit | 17179869184 bit | 8589934592 bit | 17179869184 bit | 17179869184 bit | 8589934592 bi |
内存集成电路类型 | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
内存宽度 | 64 | 64 | 64 | 64 | 64 | 64 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 240 | 240 | 240 | 240 | 240 | 240 |
字数 | 134217728 words | 268435456 words | 134217728 words | 268435456 words | 268435456 words | 134217728 words |
字数代码 | 128000000 | 256000000 | 128000000 | 256000000 | 256000000 | 128000000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
组织 | 128MX64 | 256MX64 | 128MX64 | 256MX64 | 256MX64 | 128MX64 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | UNSPECIFIED | PLASTIC/EPOXY |
封装代码 | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
峰值回流温度(摄氏度) | 260 | 260 | 260 | 260 | 260 | 260 |
自我刷新 | YES | YES | YES | YES | YES | YES |
最大供电电压 (Vsup) | 1.575 V | 1.575 V | 1.575 V | 1.575 V | 1.575 V | 1.575 V |
最小供电电压 (Vsup) | 1.425 V | 1.425 V | 1.425 V | 1.425 V | 1.425 V | 1.425 V |
标称供电电压 (Vsup) | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V |
表面贴装 | NO | NO | NO | NO | NO | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER |
端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
端子节距 | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm |
端子位置 | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | DUAL | ZIG-ZAG |
处于峰值回流温度下的最长时间 | 20 | 20 | 20 | 20 | 20 | 20 |
最大时钟频率 (fCLK) | 667 MHz | 667 MHz | 800 MHz | 800 MHz | - | 533 MHz |
I/O 类型 | COMMON | COMMON | COMMON | COMMON | - | COMMON |
JESD-609代码 | e1 | e1 | e1 | e1 | - | e1 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | - | 3-STATE |
封装等效代码 | DIMM240,40 | DIMM240,40 | DIMM240,40 | DIMM240,40 | - | DIMM240,40 |
电源 | 1.5 V | 1.5 V | 1.5 V | 1.5 V | - | 1.5 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified |
刷新周期 | 8192 | 8192 | 8192 | 8192 | - | 8192 |
端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | - | Tin/Silver/Copper (Sn/Ag/Cu) |
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