Si7898DP
New Product
Vishay Siliconix
N-Channel 150-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
150
r
DS(on)
(W)
0.085 @ V
GS
= 10 V
0.095 @ V
GS
= 6.0 V
I
D
(A)
4.8
4.5
D
TrenchFETr Power MOSFET for Fast Switching
D
PWM Optimized
D
New Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
APPLICATIONS
D
DC/DC Power Supply Primary Side Switch
D
Automotive and Industrial Motor Drives
PowerPAKt SO-8
D
6.15 mm
S
1
2
3
4
D
8
7
6
5
D
D
D
S
S
G
5.15 mm
G
S
N-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
Avalanch Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
L = 0.1 mH
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
10 secs
150
"20
4.8
Steady State
Unit
V
3.0
2.4
25
10
A
I
D
I
DM
I
AS
I
S
P
D
T
J
, T
stg
3.8
4.1
5.0
3.2
–55 to 150
1.6
1.9
1.2
W
_C
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71873
S-20827—Rev. A, 17-Jun-02
www.vishay.com
Steady State
Steady State
R
thJA
R
thJC
Symbol
Typical
20
52
2.1
Maximum
25
65
2.6
Unit
_C/W
C/W
1
Si7898DP
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 120 V, V
GS
= 0 V
V
DS
= 120 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 3.5 A
r
DS(on)
V
GS
= 6.0 V, I
D
= 3.0 A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= 15 V, I
D
= 5 A
I
S
= 2.5 A, V
GS
= 0 V
25
0.068
0.076
15
0.75
1.2
0.085
0.095
W
S
V
2.0
4.0
"100
1
5
V
nA
mA
m
A
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source On-State Resistance
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
g
t
rr
I
F
= 2.5 A, di/dt = 100 A/ms
V
DD
= 75 V, R
L
= 21
W
I
D
^
3.5 A, V
GEN
= 10 V, R
G
= 6
W
V
DS
= 75 V, V
GS
= 10 V, I
D
= 3.5 A
17
3.2
6.0
9.0
10
24
17
0.85
45
70
14
15
35
25
W
ns
ns
21
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
25
V
GS
= 10 thru 6 V
20
I
D
– Drain Current (A)
I
D
– Drain Current (A)
20
25
Transfer Characteristics
15
5V
10
15
10
T
C
= 125_C
5
25_C
5
3, 4 V
0
0
2
4
6
8
10
0
0
1
2
3
4
–55_C
5
6
V
DS
– Drain-to-Source Voltage (V)
www.vishay.com
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71873
S-20827—Rev. A, 17-Jun-02
2
Si7898DP
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.15
r
DS(on)
– On-Resistance (
W
)
1200
Vishay Siliconix
Capacitance
C – Capacitance (pF)
0.12
900
C
iss
0.09
V
GS
= 6 V
600
0.06
V
GS
= 10 V
0.03
300
C
rss
C
oss
0.00
0
5
10
15
20
25
0
0
30
60
90
120
150
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
20
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 75 V
I
D
= 3.5 A
16
3.0
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 3.5 A
r
DS(on)
– On-Resistance (
W)
(Normalized)
12
18
24
30
2.5
2.0
12
1.5
8
1.0
4
0.5
0
0
6
Q
g
– Total Gate Charge (nC)
0.0
–50
–25
0
25
50
75
100
125
150
T
J
– Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50
0.25
On-Resistance vs. Gate-to-Source Voltage
r
DS(on)
– On-Resistance (
W
)
0.20
I
D
= 3.5 A
0.15
I
S
– Source Current (A)
T
J
= 150_C
10
0.10
T
J
= 25_C
0.05
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71873
S-20827—Rev. A, 17-Jun-02
www.vishay.com
3
Si7898DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
1.0
200
Single Pulse Power, Juncion-To-Ambient
0.5
V
GS(th)
Variance (V)
160
I
D
= 250
mA
Power (W)
120
0.0
–0.5
80
–1.0
40
–1.5
–50
0
–25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (sec)
1
10
T
J
– Temperature (_C)
Safe Operating Area
100
10
ms
10
I
D
– Drain Current (A)
Limited by
r
DS(on)
100
ms
1
1 ms
10 ms
100 ms
1s
10 s
0.1
T
C
= 25_C
Single Pulse
0.01
0.01
0.1
1
10
100
100 s, dc
1000
V
DS
– Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=
_C/W
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Square Wave Pulse Duration (sec)
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71873
S-20827—Rev. A, 17-Jun-02
Si7898DP
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71873
S-20827—Rev. A, 17-Jun-02
www.vishay.com
5
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