SPDT RF SWITCH
Absorptive RF Switch with internal driver.
Single Supply Voltage , +3V
Product Features
• Very Low Insertion loss over entire frequency range
• Super High Isolation over entire frequency range
• High Input IP3, +55 dBm typ.
• Single positive supply voltage, +3V
• Very low DC current consumption, 8μA
• Immune to latch up
• Unique design-simultaneous switch off of RF1&RF2
50Ω DC-3000 MHz
HSWA2-30DR+
+ RoHS compliant in accordance
with EU Directive (2002/95/EC)
The +Suffix has been added in order to identify RoHS
Compliance. See our web site for RoHS Compliance
methodologies and qualifications.
Typical Applications
• Base Station Infrastructure
• Portable Wireless
• CATV & DBS
• MMDS & Wireless LAN
• Band switch
• Diplexer switches
• Bypass switches
General Description
The HSWA2-30DR+ is a 50Ω high isolation SPDT RF switch designed for wireless applications, covering
a broad frequency range from DC up to 3GHz with low insertion loss. The HSWA2-30DR+ operates on a
single supply voltage +3V. See application note AN-80-006 for +5V supply voltage. This unit includes an
internal CMOS control driver with two-pins control. The switch consumes very low supply current, 8 μA typ.
The HSWA2-30DR+ switch is in a very small size and low profile package, 4x4mm and 0.9mm respec-
tively.
Functional Diagram
RF COMMON
50
RF1
RF2
50
CONTROL 1
CONTROL 2
50
Internal Control Driver
Rev. F
M116303
HSWA2-30DR+
080227
Page 1 of 11
SPDT RF SWITCH
RF Electrical Specifications, DC-3000 MHz, T
AMB
=25°C, V
DD
=+3V
Parameter
Operating Frequency
Insertion Loss
(note 1)
1 GHz
2 GHz
3 GHz
1 GHz
2 GHz
3 GHz
1 GHz
2 GHz
3 GHz
1 GHz
2 GHz
3 GHz
1 GHz
2 GHz
3 GHz
5 MHz - 1000 MHz
(note 2)
(note 2,3)
10 MHz - 1000MHz
1000MHz - 3000MHz
1000 MHz
+29
55
46
40
57
54
40
Condition
DC
Min.
(note 4)
Typ.
HSWA2-30DR+
Max.
3000
0.75
0.95
1.2
64
50
44
63
60
48
20
17
14
20
18
17
+80
+55
+52
+31
1.0
1.2
1.4
Units
MHz
dB
Isolation between Common port and RF1/RF2 ports
dB
Isolation between RF1 and RF2 ports
dB
Return Loss @ Common port
dB
Return Loss @ RF1/RF2 ports
Input IP2
Input IP3
dB
dBm
dBm
dBm
Input 1dB Compression
Notes:
1. I.LOSS values are de-embedded from test board Loss.
2. Device linearity degrades below 1 MHz.
3. Note absolute maximum ratings for input power.
4. Lowest Freq. determined by value of coupling capacitors at RF ports.
DC Electrical Specifications
Parameter
V
DD
,
Supply Voltage
(note 5)
Supply Current (V
DD
= 3V)(note 6)
Control Voltage Low
Control Voltage High
Min.
2.7
—
0
0.7xV
DD
Typ.
3
8
—
—
Max.
3.3
20
0.3xV
DD
V
DD
Units
V
μA
V
V
Note 5: See application note AN-80-006 for +5V supply voltage.
Note 6: At Control Frequency of 1 kHz. Increases to 21 μA at 10 kHz and 56 μA at 50 kHz typically.
Switching Specifications
Parameter
Switching Time, 50% CTRL to 90/10% RF
Video Feedthrough, 5 MHz - 1000 MHz (note 7)
Min.
—
—
Typ.
2.0
—
Max.
—
15
Units
μSec
mV
p-p
Note 7: Measured with a 1 nSec risetime,0/3V pulse and 500 MHz bandwidth.
Absolute Maximum Ratings
Parameter
Operating Temperature
Storage Temperature
V
DD
,
Supply Voltage
Voltage control
ESD, HBM (ANSI/ESD STM 5.1 - 2001)
(ANSI/ESD STM 5.2 - 1999)
RF input power: (note 8)
When the common port is connected to the RF port (RF1 or RF2)
When the RF port (RF1 or RF2) is not connected to the common port
When the common port is not connected to either RF1 or RF2
Note 8: See Truth Table on page 3.
ESD, MM
Ratings
-40°C to 85°C
-65°C to 150°C
-0.3V Min., 4V Max.
-0.3V Min., V
DD
+ 0.3V Max.
250V to < 500V (CLASS 1A)
50V (CLASS M1)
+33dBm
+24dBm
+24dBm
Page 2 of 11
SPDT RF SWITCH
HSWA2-30DR+
The RF switch control bits select the desired switch-state, as shown in
Table 1:
Truth Table.
Table 1: Truth Table.
STATE
1
2
3
4
Control Input
Control 1
Low
Low
High
High
Control 2
Low
High
Low
High
RF1 to RF COMMON
OFF
OFF
ON
N/A
RF Input / Output
RF2 to RF COMMON
OFF
ON
OFF
N/A
General notes:
1. When either of the RF1 or RF2 ports is closed (ON state), the closed port is connected to the RF Common port.
2. When either of the RF1 or RF2 ports is open (OFF state), the open port is connected to an internal
50Ω termination.
3. When both RF1 and RF2 ports are open (OFF state), the all three RF ports are connected to an internal
50Ω termination.
EXAMPLE OF STATE 3
Functional Diagram
RF COMMON
50
RF1
RF2
50
CONTROL 1
CONTROL 2
50
Internal Control Driver
Page 3 of 11
SPDT RF SWITCH
Pin Description
Function
GND
GND
RF1
GND
GND
GND
GND
RF COM
GND
GND
GND
GND
RF2
GND
GND
Control 2
Control 1
GND
GND
VDD
GND
Pin
Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Paddle
Description
RF Ground
RF Ground
RF I/O
RF Ground
RF Ground
RF Ground
RF Ground
RF Common
RF Ground
RF Ground
RF Ground
RF Ground
RF I/O
RF Ground
RF Ground
Control 2
Control 1
Supply Voltage Ground
Digital Ground
Supply Voltage
RF Ground Pad
(note 2)
(note 1)
(note 1)
(note 1)
HSWA2-30DR+
Pin Configuration (Top View)
20
19
18
17
Control 1
16
Control 2
GND
GND
VDD
GND
GND
RF1
GND
GND
1
2
3
4
5
10
6
7
8
9
15
GND
GND
RF2
GND
GND
2x2mm
Paddle
ground
14
13
12
11
RF COM
GND
GND
GND
Notes:
1. RF pins 3, 8 and 13 must be at 0 VDC. The RF pins do not require DC
blocking capacitors for proper operation if the 0 VDC requirement is met.
2. The exposed solder pad on the bottom of the package (See Pin
Configuration) must be grounded for proper device operation
GND
Page 4 of 11
SPDT RF SWITCH
INSERTION LOSS Vs. FREQUENCY @ +25°C
2.5
2.5
HSWA2-30DR+
INSERTION LOSS Vs. FREQUENCY
Typical Performance Curves over various states. For switch state see Truth Table 1 on page 3.
STATE 3
STATE 2
2
2
STATE
3
INSERTION LOSS (dB)
+85°C
+25°C
-40°C
INSERTION LOSS (dB)
1.5
1.5
1
1
0.5
0.5
0
0
500
1000
1500
2000
2500
3000
3500
4000
0
0
500
1000
FREQUENCY (MHz)
1500
2000
2500
FREQUENCY (MHz)
3000
3500
4000
ISOLATION BETWEEN RF1/RF2 TO RF COM
Vs. FREQUENCY
120
110
100
120
ISOLATION BETWEEN RF1/RF2 TO RF COM
Vs. FREQUENCY
+85°C
+25°C
-40°C
STATE
2
&
3
110
100
STATE
1
+85°C
+25°C
-40°C
ISOLATION (dB)
ISOLATION (dB)
90
80
70
60
50
40
30
0
500
1000
1500
2000
2500
3000
3500
4000
90
80
70
60
50
40
30
0
500
1000
1500
2000
2500
3000
3500
4000
FREQUENCY (MHz)
FREQUENCY (MHz)
ISOLATION BETWEEN RF1 TO RF2
Vs. FREQUENCY
110
140
ISOLATION BETWEEN RF1 TO RF2
Vs. FREQUENCY
+85°C
+25°C
-40°C
STATE
2
&
3
90
STATE
1
120
+85°C
+25°C
-40°C
ISOLATION (dB)
ISOLATION (dB)
0
500
1000
1500
2000
2500
3000
3500
4000
100
70
80
50
60
30
40
0
500
1000
1500
2000
2500
3000
3500
4000
FREQUENCY (MHz)
FREQUENCY (MHz)
Page 5 of 11
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