Datasheet> 器件分类 > 分立半导体> 晶体管> RN1107F

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RN1107F: 产品描述TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2HA1A, ESM, 3 PIN, BIP General Purpose Small Signal; 产品类别分立半导体晶体管; 文件大小304KB，共6页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN1107F概述

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2HA1A, ESM, 3 PIN, BIP General Purpose Small Signal

RN1107F规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Toshiba(东芝)
包装说明	SMALL OUTLINE, R-PDSO-F3
针数	3
Reach Compliance Code	unknown
ECCN代码	EAR99
其他特性	BUILT-IN BIAS RESISTOR RATIO IS 4.7
最大集电极电流 (IC)	0.1 A
集电极-发射极最大电压	50 V
配置	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	80
JESD-30 代码	R-PDSO-F3
JESD-609代码	e0
元件数量	1
端子数量	3
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	NPN
最大功率耗散 (Abs)	0.1 W
认证状态	Not Qualified
表面贴装	YES
端子面层	TIN LEAD
端子形式	FLAT
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	250 MHz

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RN1107F~RN1109F

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1107F,RN1108F,RN1109F

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

With built-in bias resistors.

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN2107F~2109F

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN1107F

RN1108F

RN1109F

R1 (kΩ)

R2 (kΩ)

JEDEC

EIAJ

TOSHIBA

―

2-2HA1A

Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

RN1107F~1109F

RN1107F

Emitter-base voltage

RN1108F

RN1109F

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN1107F~1109F

stg

EBO

Symbol

CBO

CEO

Rating

100

150

−55~150

°C

Unit

2001-06-07

RN1107F相似产品对比

	RN1107F	RN1108F	RN1109F
描述	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2HA1A, ESM, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2HA1A, ESM, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2HA1A, ESM, 3 PIN, BIP General Purpose Small Signal
是否Rohs认证	不符合	不符合	不符合
包装说明	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3
针数	3	3	3
Reach Compliance Code	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99
其他特性	BUILT-IN BIAS RESISTOR RATIO IS 4.7	BUILT-IN BIAS RESISTOR RATIO IS 2.1	BUILT-IN BIAS RESISTOR RATIO IS 0.5
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A
集电极-发射极最大电压	50 V	50 V	50 V
配置	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	80	80	70
JESD-30 代码	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3
JESD-609代码	e0	e0	e0
元件数量	1	1	1
端子数量	3	3	3
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	NPN	NPN	NPN
最大功率耗散 (Abs)	0.1 W	0.1 W	0.1 W
认证状态	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES
端子面层	TIN LEAD	TIN LEAD	TIN LEAD
端子形式	FLAT	FLAT	FLAT
端子位置	DUAL	DUAL	DUAL
晶体管应用	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON
标称过渡频率 (fT)	250 MHz	250 MHz	250 MHz
厂商名称	Toshiba(东芝)	-	Toshiba(东芝)

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