84A, 55V, 0.0073ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, MP-25 FIN CUT, 3 PIN
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Renesas(瑞萨电子) |
| 零件包装代码 | TO-262AA |
| 包装说明 | IN-LINE, R-PSIP-T3 |
| 针数 | 3 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 雪崩能效等级（Eas） | 441 mJ |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 55 V |
| 最大漏极电流 (Abs) (ID) | 84 A |
| 最大漏极电流 (ID) | 84 A |
| 最大漏源导通电阻 | 0.0073 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-262AA |
| JESD-30 代码 | R-PSIP-T3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 175 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 峰值回流温度（摄氏度） | 260 |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 200 W |
| 最大脉冲漏极电流 (IDM) | 336 A |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| NP84N055DHE-AZ | NP84N055CHE | NP84N055CHE-AZ | NP84N055EHE | NP84N055DHE | |
|---|---|---|---|---|---|
| 描述 | 84A, 55V, 0.0073ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, MP-25 FIN CUT, 3 PIN | 84A, 55V, 0.0073ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-25, 3 PIN | 84A, 55V, 0.0073ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-25, 3 PIN | 84A, 55V, 0.0073ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, MP-25ZJ, 3 PIN | 84A, 55V, 0.0073ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, MP-25 FIN CUT, 3 PIN |
| 是否Rohs认证 | 符合 | 不符合 | 符合 | 不符合 | 不符合 |
| 厂商名称 | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) |
| 零件包装代码 | TO-262AA | TO-220AB | TO-220AB | D2PAK | TO-262AA |
| 包装说明 | IN-LINE, R-PSIP-T3 | MP-25, 3 PIN | MP-25, 3 PIN | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 |
| 针数 | 3 | 3 | 3 | 4 | 3 |
| Reach Compliance Code | compliant | unknown | compliant | compliant | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 雪崩能效等级（Eas） | 441 mJ | 441 mJ | 441 mJ | 441 mJ | 441 mJ |
| 外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 55 V | 55 V | 55 V | 55 V | 55 V |
| 最大漏极电流 (Abs) (ID) | 84 A | 84 A | 84 A | 84 A | 84 A |
| 最大漏极电流 (ID) | 84 A | 84 A | 84 A | 84 A | 84 A |
| 最大漏源导通电阻 | 0.0073 Ω | 0.0073 Ω | 0.0073 Ω | 0.0073 Ω | 0.0073 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-262AA | TO-220AB | TO-220AB | TO-263AB | TO-262AA |
| JESD-30 代码 | R-PSIP-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSSO-G2 | R-PSIP-T3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 2 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | FLANGE MOUNT | FLANGE MOUNT | SMALL OUTLINE | IN-LINE |
| 峰值回流温度（摄氏度） | 260 | NOT SPECIFIED | 260 | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 200 W | 200 W | 200 W | 200 W | 200 W |
| 最大脉冲漏极电流 (IDM) | 336 A | 336 A | 336 A | 336 A | 336 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | YES | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | GULL WING | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 是否无铅 | - | 含铅 | - | 含铅 | 含铅 |
| JESD-609代码 | - | e0 | - | e0 | e0 |
| 端子面层 | - | Tin/Lead (Sn/Pb) | - | TIN LEAD | Tin/Lead (Sn/Pb) |
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