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IRHSLNA53Z60: 产品描述Power Field-Effect Transistor, 75A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN; 产品类别分立半导体晶体管; 文件大小125KB，共9页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/

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IRHSLNA53Z60概述

Power Field-Effect Transistor, 75A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN

IRHSLNA53Z60规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Infineon(英飞凌)
包装说明	CHIP CARRIER, R-CBCC-N3
Reach Compliance Code	not_compliant
ECCN代码	EAR99
雪崩能效等级（Eas）	500 mJ
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	30 V
最大漏极电流 (Abs) (ID)	75 A
最大漏极电流 (ID)	75 A
最大漏源导通电阻	0.004 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-CBCC-N3
JESD-609代码	e0
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR
封装形式	CHIP CARRIER
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	250 W
最大脉冲漏极电流 (IDM)	300 A
认证状态	Not Qualified
表面贴装	YES
端子面层	Tin/Lead (Sn/Pb)
端子形式	NO LEAD
端子位置	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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PD-94400B

RAD-HARD

SYNCHRONOUS RECTIFIER

SURFACE MOUNT (SMD-2)

Product Summary

Part Number

IRHSLNA57Z60

IRHSLNA53Z60

IRHSLNA54Z60

IRHSLNA58Z60

Radiation Level

100K Rads (Si)

300K Rads (Si)

600K Rads (Si)

1000K Rads (Si)

DS(on)

4.0mΩ

4.5mΩ

200nC

SMD-2

IRHSLNA57Z60

30V, N-CHANNEL

Description:

The SynchFet family of Co-Pack RAD-Hard MOSFETs

and Schottky diodes offers the designer an innovative,

board space saving solution for switching regulator and

power management applications. RAD-Hard MOSFETs

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. Combining

this technology with International Rectifier’s low forward

drop Schottky rectifiers results in an extremely efficient

device suitable for use in a wide variety of Military and

Space applications.

Features:

Co-Pack N-channel RAD-Hard MOSFET

and Schottky Diode

Ideal for Synchronous Rectifiers in DC-DC

Converters up to 75A Output

Low Conduction Losses

Low Switching Losses

Low Vf Schottky Rectifier

Refer to IRHSNA57Z60 for Lower Rds(on)

Absolute Maximum Ratings

Parameter

ID @ VGS = 12V, TC = 25°C

ID @ VGS = 12V, TC = 100°C

IDM

PD @ TC = 25°C

VGS

EAS

IAR

EAR

IF (AV)@ TC = 25°C

IF (AV)@ TC =100°C

TJ, TSTG

Continuous Drain or Source Current

Pulsed Drain Current

➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

➃

Avalanche Current

➀

Repetitive Avalanche Energy

➀

Schottky and Body Diode Avg. Forward Current

➂

Schottky and Body Diode Avg. Forward Current

➂

Opeating and Storage Temperature Range

Pckg. Mounting Surface Temp.

Weight

* Current is limited by package

For footnotes refer to the last page

Pre-Irradiation

Units

75*

300

250

2.0

±20

500

75*

-55 to 150

300 (for 5s)

3.3 (Typical)

W/°C

°C

www.irf.com

03/30/04

IRHSLNA53Z60相似产品对比

	IRHSLNA53Z60	IRHSLNA53Z60PBF	IRHSLNA54Z60	IRHSLNA54Z60PBF	IRHSLNA57Z60	IRHSLNA57Z60PBF
描述	Power Field-Effect Transistor, 75A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN	Power Field-Effect Transistor, 75A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN	Power Field-Effect Transistor, 75A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN	Power Field-Effect Transistor, 75A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN	Power Field-Effect Transistor, 75A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN	Power Field-Effect Transistor, 75A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN
是否Rohs认证	不符合	符合	不符合	符合	不符合	符合
厂商名称	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)
包装说明	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3
Reach Compliance Code	not_compliant	compliant	not_compliant	compliant	not_compliant	compliant
雪崩能效等级（Eas）	500 mJ	500 mJ	500 mJ	500 mJ	500 mJ	500 mJ
外壳连接	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	30 V	30 V	30 V	30 V	30 V	30 V
最大漏极电流 (ID)	75 A	75 A	75 A	75 A	75 A	75 A
最大漏源导通电阻	0.004 Ω	0.004 Ω	0.004 Ω	0.004 Ω	0.004 Ω	0.004 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-CBCC-N3	R-CBCC-N3	R-CBCC-N3	R-CBCC-N3	R-CBCC-N3	R-CBCC-N3
元件数量	1	1	1	1	1	1
端子数量	3	3	3	3	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	300 A	300 A	300 A	300 A	300 A	300 A
表面贴装	YES	YES	YES	YES	YES	YES
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

IRHSLNA53Z60

IRHSLNA53Z60概述

IRHSLNA53Z60规格参数

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IRHSLNA53Z60相似产品对比

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