Datasheet> 器件分类 > 分立半导体> 晶体管> CMPT5551HCLEADFREE

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CMPT5551HCLEADFREE: 产品描述Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3; 产品类别分立半导体晶体管; 文件大小322KB，共2页; 制造商Central Semiconductor; 标准

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CMPT5551HCLEADFREE概述

Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3

CMPT5551HCLEADFREE规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	Central Semiconductor
包装说明	SMALL OUTLINE, R-PDSO-G3
针数	3
Reach Compliance Code	compliant
ECCN代码	EAR99
最大集电极电流 (IC)	1 A
集电极-发射极最大电压	160 V
配置	SINGLE
最小直流电流增益 (hFE)	30
JESD-30 代码	R-PDSO-G3
JESD-609代码	e3
湿度敏感等级	1
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	260
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	YES
端子面层	MATTE TIN (315)
端子形式	GULL WING
端子位置	DUAL
处于峰值回流温度下的最长时间	10
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
标称过渡频率 (fT)	100 MHz

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CMPT5551HC

SURFACE MOUNT

HIGH CURRENT

NPN SILICON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT5551HC

type is a high current NPN silicon transistor

manufactured by the epitaxial planar process, epoxy

molded in a surface mount package, designed for high

voltage and high current amplifier applications.

MARKING CODE: 1FHC

SOT-23 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

UNITS

°C

°C/W

180

160

6.0

1.0

350

-65 to +150

357

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

ICBO

VCB=120V

ICBO

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

hFE

Cob

VCB=120V, TA=100°C

VEB=4.0V

IC=100µA

IC=1.0mA

IE=10µA

IC=10mA,

IC=50mA,

IB=1.0mA

IB=5.0mA

MAX

UNITS

µA

180

160

6.0

0.15

0.20

1.00

100

250

IC=10mA, IB=1.0mA

IC=50mA, IB=5.0mA

VCE=5.0V, IC=1.0mA

VCE=5.0V, IC=10mA

VCE=5.0V, IC=50mA

VCE=10V, IC=1.0A

VCE=10V,

VCB=10V,

IC=10mA, f=100MHz

IE=0, f=1.0MHz

MHz

R1 (1-February 2010)

CMPT5551HCLEADFREE相似产品对比

	CMPT5551HCLEADFREE	CMPT5551HCBK	CMPT5551HCBKLEADFREE	CMPT5551HCTR13LEADFREE	CMPT5551HCTR
描述	Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3	Transistor	Transistor	Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
厂商名称	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
包装说明	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	,	,	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
最大集电极电流 (IC)	1 A	1 A	1 A	1 A	1 A
配置	SINGLE	SINGLE	Single	Single	SINGLE
最小直流电流增益 (hFE)	30	30	80	80	30
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C
极性/信道类型	NPN	NPN	NPN	NPN	NPN
表面贴装	YES	YES	YES	YES	YES
标称过渡频率 (fT)	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
是否Rohs认证	符合	-	符合	符合	-
针数	3	3	-	-	3
ECCN代码	EAR99	EAR99	-	-	EAR99
集电极-发射极最大电压	160 V	160 V	-	-	160 V
JESD-30 代码	R-PDSO-G3	R-PDSO-G3	-	-	R-PDSO-G3
JESD-609代码	e3	e0	-	-	e0
元件数量	1	1	-	-	1
端子数量	3	3	-	-	3
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	-	-	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	-	-	SMALL OUTLINE
认证状态	Not Qualified	Not Qualified	-	-	Not Qualified
端子面层	MATTE TIN (315)	TIN LEAD	-	-	TIN LEAD
端子形式	GULL WING	GULL WING	-	-	GULL WING
端子位置	DUAL	DUAL	-	-	DUAL
晶体管应用	AMPLIFIER	AMPLIFIER	-	-	AMPLIFIER
晶体管元件材料	SILICON	SILICON	-	-	SILICON
最大功率耗散 (Abs)	-	0.35 W	0.35 W	0.35 W	0.35 W

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