VDI 50-06P1
VID 50-06P1
VII 50-06P1
VIO 50-06P1
IGBT Modules
in ECO-PAC 2
Short Circuit SOA Capability
Square RBSOA
Preliminary data sheet
VIO
IJK 10
I
C25
= 42.5 A
V
CES
= 600 V
V
CE(sat) typ.
= 2.4 V
VII
OP9
VID
IK10
VDI
AC1
L9
X13
GH10
SV18
X15
L9
NTC
X15
T16
NTC
AC1
E2
A1
S18
LMN 9
NTC
L9
X15
F1
X16
PS18
B3
Pin arangement see outlines
K10
VX18
X16
IK10
X16
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
T
C
= 25°C
T
C
= 80°C
V
GE
= ±15 V; R
G
= 33
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
600
± 20
V
de
42.5
29
V
CES
10
µs
W
A
A
60
A
130
2.4
2.9
2.9
6.5
0.6
1.7
100
50
50
270
40
1.4
1.0
16
1.92
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
0.96 K/W
K/W
ne
4.5
V
CE
= V
CES
; V
GE
= ±15 V; R
G
= 33
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Conditions
w
r
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
R
thJC
R
thJH
I
C
= 50 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 0.7 mA; V
GE
= V
CE
t
V
CE
= V
CES
;
fo
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
No
V
CE
= 0 V; V
GE
=
±
20 V
Inductive load, T
VJ
= 125°C
V
CE
= 300 V; I
C
= 30 A
V
GE
= 15/0 V; R
G
= 33
Ω
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
si
V
gn
Features
Advantages
• NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
• FRED diodes
- fast reverse recovery
- low forward voltage
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
• space and weight savings
• reduced protection circuits
• leads with expansion bend for stress relief
Typical Applications
• AC and DC motor control
• AC servo and robot drives
• power supplies
• welding inverters
Recommended replacement:
Please contact your local
sales office
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
1-4
0650
VDI 50-06P1
VID 50-06P1
Reverse diodes (FRED)
Symbol
I
F25
I
F80
Symbol
V
F
I
RM
t
rr
R
thJC
R
thJH
Conditions
T
C
= 25°C
T
C
= 80°C
Conditions
I
F
= 30 A; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 15 A; di
F
/dt = 400 A/µs; T
VJ
= 125°C
V
R
= 300 V; V
GE
= 0 V
with heatsink compound (0.42 K/m.K; 50 µm)
VII 50-06P1
VIO 50-06P1
VII
Maximum Ratings
30
19
A
A
Characteristic Values
min.
typ. max.
2.57
1.8
7
50
4.6
2.84
V
V
A
ns
2.3 K/W
K/W
B3
Temperature Sensor NTC
Symbol
R
25
B
25/50
Module
Symbol
T
VJ
T
stg
V
ISOL
M
d
a
Symbol
d
S
d
A
Weight
I
ISOL
≤
1 mA; 50/60 Hz
mounting torque (M4)
Max. allowable acceleration
Conditions
Conditions
Maximum Ratings
-40...+150
-40...+150
Conditions
T = 25°C
4.75
5.0
3375
5.25 kΩ
K
w
ne
11.2
11.2
24
VID
1.5 - 2.0
14 - 18
50
Characteristic Values
min. typ. max.
mm
mm
g
VDI
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
2-4
0650
Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated.
No
t
fo
r
Creepage distance on surface
(Pin to heatsink)
Strike distance in air
(Pin to heatsink)
de
°C
°C
3000
V~
Nm
lb.in.
m/s
2
si
gn
VIO
Characteristic Values
min. typ. max.
VDI 50-06P1
VID 50-06P1
90
A
75
I
C
90
A
75
V
GE
= 17V
15V
13V
VII 50-06P1
VIO 50-06P1
I
C
60
T
J
= 25°C
11V
60
45
30
15
0
0
V
GE
= 17 V
15 V
13 V
11V
45
30
T
J
= 125°C
9V
25T60
9V
15
0
25T60
1
2
3
4
V
CE
5
V
6
0
1
2
3
4
V
CE
5
V
6
B3
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
90
A
75
I
C
V
CE
= 20V
90
A
75
I
F
60
45
30
15
60
45
30
T
J
= 125°C
T
J
= 25°C
de
w
si
T
J
= 125°C
T
J
= 25°C
25T60
15
0
4
6
8
10
12
V
GE
25T60
0
ne
14
V
16
0,0
gn
0,5
1,0
V
F
1,5
V
2,0
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
50
40
A
I
RM
r
V
fo
20
150
120
ns
90
T
J
= 125°C
V
R
= 300 V
I
F
= 30 A
I
RM
15
V
GE
t
rr
t
rr
10
No
V
CE
= 300 V
I
C
= 30 A
t
30
20
10
25T60
60
30
MUBW3006A7
5
0
0
40
80
120
Q
G
nC
0
0
200
400
600
-di/dt
0
160
800
A/μs
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
0650
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
3-4
VDI 50-06P1
VID 50-06P1
8
V
CE
= 300V
mJ
V
GE
= ±15V
VII 50-06P1
VIO 50-06P1
400
ns
300
80
t
r
t
d(on)
E
on
ns
60
t
40
2,0
mJ
E
off
1,5
V
CE
= 300V
V
GE
= ±15V
R
G
= 33Ω
T
VJ
= 125°C
E
off
E
on
R = 33Ω
6
G
T
VJ
= 125°C
t
t
d(off)
200
4
1,0
2
20
0,5
t
f
100
0
0
20
40
I
C
25T60
0
0,0
0
20
40
I
C
25T60
0
60
A
60 A
B3
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current
80
ns
si
10
20
30
40
50
R
G
E
on
V
CE
= 300V
mJ
V
GE
= ±15V
I
C
= 30A
3
T = 125°C
VJ
4
t
d(on)
2,0
gn
60
single pulse
400
t
d(off)
ns
300
E
off
200
t
t
r
E
on
60
t
E
off
V
CE
= 300 V
mJ
V = ±15 V
GE
I
C
= 30 A
1,5
T
VJ
= 125°C
40
1
de
0,5
2
1,0
100
t
f
0
0
10
20
30
40
50
R
G
25T60
w
60
70
Ω
80
20
0,0
0
25T60
70
Ω
80
0
Fig. 9 Typ. turn on energy and switching
ne
10
K/W
Z
thJC
1
Fig. 10 Typ. turn off energy and switching
times versus gate resistor
80
A
I
CM
r
60
fo
diode
IGBT
0,1
0,01
0,001
25T60
40
20
No
R
G
= 33
Ω
T
VJ
= 125°C
t
0
0
100
200
300
400
500
600
V
CE
700
V
0,0001
0,00001 0,0001 0,001
VDI...50-06P1
0,01
0,1
t
1
s 10
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance
RBSOA
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
4-4
0650
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
