Datasheet> 器件分类 > 无线/射频/通信> 射频和微波> SGA6586ZSQ

文档预览

SGA6586ZSQ: 产品描述Wide Band Low Power Amplifier, 0MHz Min, 4000MHz Max, HALOGEN FREE AND ROHS COMPLIANT, SOT-86, 4 PIN; 产品类别无线/射频/通信射频和微波; 文件大小279KB，共6页; 制造商Qorvo; 官网地址https://www.qorvo.com

下载文档详细参数选型对比全文预览

SGA6586ZSQ概述

Wide Band Low Power Amplifier, 0MHz Min, 4000MHz Max, HALOGEN FREE AND ROHS COMPLIANT, SOT-86, 4 PIN

SGA6586ZSQ规格参数

参数名称	属性值
厂商名称	Qorvo
Reach Compliance Code	unknown
ECCN代码	5A991.G
特性阻抗	50 Ω
构造	COMPONENT
增益	16.7 dB
最大输入功率 (CW)	16 dBm
最大工作频率	4000 MHz
最小工作频率
最高工作温度	85 °C
最低工作温度	-40 °C
射频/微波设备类型	WIDE BAND LOW POWER

SGA6586ZSQ文档预览

SGA6586ZDC

to 4000MHz,

Cascadable

SiGe HBT

MMIC Ampli-

fier

SGA6586Z

DC to 4000MHz, CASCADABLE SiGe HBT

MMIC AMPLIFIER

Package: SOT-86

Product Description

The SGA6586Z is a high performance SiGe HBT MMIC Amplifier. A Darling-

ton configuration featuring one-micron emitters provides high F

and

excellent thermal performance. The heterojunction increases breakdown

voltage and minimizes leakage current between junctions. Cancellation of

emitter junction non-linearities results in higher suppression of intermodu-

lation products. Only two DC-blocking capacitors, a bias resistor, and an

optional RF choke are required for operation.

Optimum Technology

Matching® Applied

GaAs HBT

GaAs MESFET

InGaP HBT

Gain & Return Loss vs. Freq. @T

=+25°C

GAIN

Features



High Gain: 18.4dB at

1950MHz

Cascadable 50Ω

Operates from Single Supply

Low Thermal Resistance

Package

PA Driver Amplifier

Cellular, PCS, GSM, UMTS

IF Amplifier

Wireless Data, Satellite

Applications



-10

IRL

ORL

Return Loss (dB)



SiGe BiCMOS

Si BiCMOS

Gain (dB)

-20



SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MEMS

Frequency (GHz)

-30

-40

Parameter

Small Signal Gain

Min.

Specification

Typ.

23.8

18.4

16.7

21.5

19.0

33.8

32.2

2500

Max.

Unit

dBm

MHz

850MHz

1950MHz

2400MHz

850MHz

1950MHz

850MHz

1950MHz

>10dB

Condition

Output Power at 1dB Compression

Output Third Intercept Point

Bandwidth Determined by Return

Loss

Input Return Loss

21.4

1950MHz

Output Return Loss

18.0

1950MHz

Noise Figure

3.1

1950MHz

Device Operating Voltage

4.5

4.9

5.3

Device Operating Current

Thermal Resistance

°C/W

(Junction - Lead)

Test Conditions: V

=8V, I

=80mA Typ., OIP

Tone Spacing=1MHz, P

OUT

per tone=-5dBm, R

BIAS

=39Ω, T

=25°C, Z

=50Ω

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

DS100916

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

1 of 6

SGA6586Z

Absolute Maximum Ratings

Parameter

Max Device Current (I

)

Max Device Voltage (V

)

Max RF Input Power

Max Junction Temp (T

)

Operating Temp Range (T

)

Max Storage Temp

Rating

160

+16

+150

-40 to +85

+150

Unit

dBm

°C

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

RoHS status based on EUDirective2002/95/EC (at time of this document revision).

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.

Operation of this device beyond any one of these limits may cause permanent dam-

age. For reliable continuous operation, the device voltage and current must not

exceed the maximum operating values specified in the table on page one.

Bias Conditions should also satisfy the following expression:

<(T

-T

)/R

, j-l

Typical Performance at Key Operating Frequencies

Parameter

Unit

100

MHz

500

MHz

850

MHz

1950

MHz

2400

MHz

16.7

30.2

16.8

17.4

19.7

3.7

3500

MHz

Small Signal Gain

25.8

23.8

18.4

Output Third Order Intercept Point

dBm

32.2

33.8

32.2

Output Power at 1dB Compression

dBm

20.9

21.5

18.0

Input Return Loss

32.2

23.3

22.8

21.4

Output Return Loss

16.8

18.2

23.0

18.0

Reverse Isolation

24.0

23.9

23.6

21.2

Noise Figure

2.5

2.7

3.1

Test Conditions: V

=8V, I

=80mA Typ., OIP

Tone Spacing=1MHz, P

OUT

per tone=-5dBm, R

BIAS

=39Ω, T

=25°C, Z

=50Ω

14.4

14.2

16.6

OIP

vs. Frequency

= 4.9 V, I

= 80 mA

OIP

(dBm)

1dB

vs. Frequency

= 4.9 V, I

= 80 mA

1dB

(dBm)

=+25ºC

0.5

1.5

Frequency (GHz)

2.5

0.5

1.5

Frequency (GHz)

2.5

Noise Figure vs. Frequency

= 4.9 V, I

= 80 mA

Noise Figure (dB)

=+25ºC

0.5

1.5

Frequency (GHz)

2.5

2 of 6

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS100916

SGA6586Z

vs. Frequency

= 4.9 V, I

= 10 mA (Typ.)

(dB)

= 4.9 V, I

= 80 mA

-10

-20

Frequency (GHz)

+25°C

-40°C

+85°C

-30

-40

+25°C

-40°C

+85°C

Frequency (GHz)

vs. Frequency

-10

(dB)

-20

-30

= 4.9 V, I

= 80 mA

-10

(dB)

-20

-30

= 4.9 V, I

= 80 mA

-40

Frequency (GHz)

+25°C

-40°C

+85°C

-40

Frequency (GHz)

+25°C

-40°C

+85°C

DS100916

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

3 of 6

SGA6586Z

2, 4

Function

RF IN

GND

RF OUT/BIAS

Description

RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation.

Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possi-

ble.

RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper oper-

ation.

Application Schematic

Frequency (Mhz)

BIAS

1 uF

1000

Reference

Designator

500

850

1950

2400

3500

220 pF

100 pF

68 nH

100 pF

68 pF

33 nH

68 pF

22 pF

22 nH

56 pF

22 pF

18 nH

39 pF

15 pF

15 nH

RF in

SGA6586Z

Recommended Bias Resistor Values for I

=80mA

BIAS

=( V

-V

) / I

RF out

Supply Voltage(V

)

BIAS

10 V

12 V

Note: R

BIAS

provides DC bias stability over temperature.

Evaluation Board Layout

BIAS

1 uF

1000 pF

Mounting Instructions

1. Use a large ground pad area under device pins 2

and 4 with many plated through-holes as shown.

2. We recommend 1 or 2 ounce copper. Measurements

for this data sheet were made on a 31 mil thick FR-4

board with 1 ounce copper on both sides.

A65

4 of 6

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS100916

SGA6586Z

Suggested Pad Layout

Package Drawing

Dimensions in inches (millimeters)

Refer to drawing posted at www.rfmd.com for tolerances.

DS100916

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

5 of 6

查看更多（仅显示前5页内容，查看全部内容请下载文档。）>

SGA6586ZSQ相似产品对比

	SGA6586ZSQ	SGA6586ZSR
描述	Wide Band Low Power Amplifier, 0MHz Min, 4000MHz Max, HALOGEN FREE AND ROHS COMPLIANT, SOT-86, 4 PIN	Wide Band Low Power Amplifier, 0MHz Min, 4000MHz Max, 1 Func, HALOGEN FREE AND ROHS COMPLIANT, SOT-86, 4 PIN
厂商名称	Qorvo	Qorvo
Reach Compliance Code	unknown	compliant
ECCN代码	5A991.G	5A991.G
特性阻抗	50 Ω	50 Ω
构造	COMPONENT	COMPONENT
增益	16.7 dB	16.7 dB
最大输入功率 (CW)	16 dBm	16 dBm
最大工作频率	4000 MHz	4000 MHz
最高工作温度	85 °C	85 °C
最低工作温度	-40 °C	-40 °C
射频/微波设备类型	WIDE BAND LOW POWER	WIDE BAND LOW POWER

SGA6586ZSQ

SGA6586ZSQ概述

SGA6586ZSQ规格参数

SGA6586ZSQ文档预览

SGA6586ZSQ相似产品对比

推荐资源