Standard SRAM, 512KX8, 15ns, CMOS, CDFP36, CERAMIC, DFP-36
参数名称 | 属性值 |
厂商名称 | Cobham PLC |
包装说明 | DFP, FL36,.5 |
Reach Compliance Code | unknown |
ECCN代码 | 3A001.A.2.C |
最长访问时间 | 15 ns |
I/O 类型 | COMMON |
JESD-30 代码 | R-CDFP-F36 |
长度 | 23.368 mm |
内存密度 | 4194304 bit |
内存集成电路类型 | STANDARD SRAM |
内存宽度 | 8 |
功能数量 | 1 |
端子数量 | 36 |
字数 | 524288 words |
字数代码 | 512000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 125 °C |
最低工作温度 | -55 °C |
组织 | 512KX8 |
输出特性 | 3-STATE |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
封装代码 | DFP |
封装等效代码 | FL36,.5 |
封装形状 | RECTANGULAR |
封装形式 | FLATPACK |
并行/串行 | PARALLEL |
电源 | 1.8,3.3 V |
认证状态 | Not Qualified |
筛选级别 | 38535Q/M;38534H;883B |
座面最大高度 | 3.048 mm |
最大待机电流 | 0.0006 A |
最小待机电流 | 1 V |
最大压摆率 | 0.03 mA |
最大供电电压 (Vsup) | 1.9 V |
最小供电电压 (Vsup) | 1.7 V |
标称供电电压 (Vsup) | 1.8 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | MILITARY |
端子形式 | FLAT |
端子节距 | 1.27 mm |
端子位置 | DUAL |
总剂量 | 300k Rad(Si) V |
宽度 | 14.732 mm |
UT8R512K8-15UCX | UT8R512K8-15UWA | UT8R512K8-15UPA | UT8R512K8-15UCA | UT8R512K8-15UWX | UT8R512K8-15UWC | |
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描述 | Standard SRAM, 512KX8, 15ns, CMOS, CDFP36, CERAMIC, DFP-36 | Standard SRAM, 512KX8, 15ns, CMOS, CDFP36, CERAMIC, DFP-36 | Standard SRAM, 512KX8, 15ns, CMOS, CDFP36, CERAMIC, DFP-36 | Standard SRAM, 512KX8, 15ns, CMOS, CDFP36, CERAMIC, DFP-36 | Standard SRAM, 512KX8, 15ns, CMOS, CDFP36, CERAMIC, DFP-36 | Standard SRAM, 512KX8, 15ns, CMOS, CDFP36, CERAMIC, DFP-36 |
包装说明 | DFP, FL36,.5 | DFP, FL36,.5 | QFF, | DFP, FL36,.5 | DFP, FL36,.5 | DFP, FL36,.5 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknow |
最长访问时间 | 15 ns | 15 ns | 15 ns | 15 ns | 15 ns | 15 ns |
JESD-30 代码 | R-CDFP-F36 | R-CDFP-F36 | R-CDFP-F36 | R-CDFP-F36 | R-CDFP-F36 | R-CDFP-F36 |
内存密度 | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bi |
内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 36 | 36 | 36 | 36 | 36 | 36 |
字数 | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words |
字数代码 | 512000 | 512000 | 512000 | 512000 | 512000 | 512000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
组织 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
封装代码 | DFP | DFP | QFF | DFP | DFP | DFP |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLATPACK | FLATPACK | FLATPACK | FLATPACK | FLATPACK | FLATPACK |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 3.048 mm | 3.048 mm | 3.048 mm | 3.048 mm | 3.048 mm | 3.048 mm |
最大供电电压 (Vsup) | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V |
最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
表面贴装 | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
端子形式 | FLAT | FLAT | FLAT | FLAT | FLAT | FLAT |
端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
宽度 | 14.732 mm | 14.732 mm | 14.732 mm | 14.732 mm | 14.732 mm | 14.732 mm |
厂商名称 | Cobham PLC | - | - | Cobham PLC | Cobham PLC | Cobham PLC |
ECCN代码 | 3A001.A.2.C | 3A991.B.2.A | - | 3A001.A.2.C | 3A991.B.2.A | 3A991.B.2.A |
I/O 类型 | COMMON | COMMON | - | COMMON | COMMON | COMMON |
长度 | 23.368 mm | 23.368 mm | - | 23.368 mm | 23.368 mm | 23.368 mm |
最高工作温度 | 125 °C | 125 °C | - | 125 °C | 125 °C | 125 °C |
最低工作温度 | -55 °C | -40 °C | - | -55 °C | -40 °C | -40 °C |
输出特性 | 3-STATE | 3-STATE | - | 3-STATE | 3-STATE | 3-STATE |
封装等效代码 | FL36,.5 | FL36,.5 | - | FL36,.5 | FL36,.5 | FL36,.5 |
电源 | 1.8,3.3 V | 1.8,3.3 V | - | 1.8,3.3 V | 1.8,3.3 V | 1.8,3.3 V |
筛选级别 | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | - | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B |
最大待机电流 | 0.0006 A | 0.0006 A | - | 0.0006 A | 0.0006 A | 0.0006 A |
最小待机电流 | 1 V | 1 V | - | 1 V | 1 V | 1 V |
最大压摆率 | 0.03 mA | 0.03 mA | - | 0.03 mA | 0.03 mA | 0.03 mA |
温度等级 | MILITARY | AUTOMOTIVE | - | MILITARY | AUTOMOTIVE | AUTOMOTIVE |
总剂量 | 300k Rad(Si) V | 300k Rad(Si) V | - | 300k Rad(Si) V | 300k Rad(Si) V | 300k Rad(Si) V |
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