The documentation and process
conversion measures necessary to comply
with this revision shall be completed by
18 June 2003.
INCH-POUND
MIL-PRF-19500/428E
18 March 2003
SUPERSEDING
MIL-PRF-19500/428D
30 August 2000
PERFORMANCE SPECIFICATION
* SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON,
TYPE 2N4416A AND 2N4416AUB
JAN, JANTX, JANTXV AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for N-channel, junction, silicon field-effect
transistors. Three levels of product assurance are provided for the device type as specified in MIL-PRF-19500. (The
JANS level is inactive for new designs.)
*
*
1.2 Physical dimensions. See figure 1 (TO-72) and figure 2 (surface mount, UB).
1.3 Maximum ratings.
Types
P
T
(1)
T
A
= +25°C
mW
V
DG
and V
DS
V
GS
I
G
T
STG
and T
OP
°C
-65 to +200
V dc
35
V dc
-35
mA dc
10
2N4416A, 2N4416AUB
300
(1) Derate linearly, 1.7 mW/°C for T
A
= +25°C.
1.4 Primary electrical characteristics at T
A
= +25°C.
I
DSS
(1)
Limit
V
DS
= 15 V dc
V
GS
= 0
V
GS(off)
V
DS
= 15 V dc
I
D
= -1.0 nA dc
NF
V
DS
= 15 V dc
I
D
= 5 mA dc
R
G
= 1 k ohms
f = 100 MHz
dB
2
mA dc
Minimum
Maximum
(1) Pulsed (see 4.5.1).
5.0
15.0
V dc
-2.5
-6.0
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, Post
Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD
Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/428E
1.4 Primary electrical characteristics at T
A
= +25°C - Continued.
|y
fs
| (2)
Limit
V
DS
= 15 V dc
V
GS
= 0
f = 1 kHz
ms
Minimum
Maximum
4.5
7.5
|y
os
| (2)
V
DS
= 15 V dc
V
GS
= 0
f = 1 kHz
µs
50
C
oss
V
DS
= 15 V dc
V
GS
= 0
f = 1 MHz
pF
2
C
iss
V
DS
= 15 V dc
V
GS
= 0
f = 1 MHz
pF
4
C
rss
V
DS
= 15 V dc
V
GS
= 0
f = 1 MHz
pF
0.8
(2) Pulsed width = 100 ms; duty cycle = 10 percent.
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the,
Document Automation and Production Services (DAPS), 700 Robbins Avenue, Building 4D, Philadelphia, PA
19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/428E
Dimensions
Ltr
Inches
Min
HD
CD
CH
LL
LD
LU
TL
TW
.016
.028
.036
.209
.178
.170
.500
Max
.230
.195
.210
.750
.021
.019
.048
.046
0.41
0.71
0.91
Millimeters
Min
5.31
4.52
4.32
12.70
Max
5.84
4.95
5.33
19.05
0.53
0.48
1.22
1.17
2, 6
3, 6
5
Notes
TO-72
NOTES:
1. Dimensions are in inches, metric equivalents are given for general information only.
2. Measured in the zone beyond .250 (6.35 mm) from the seating plane.
3. Measured in the zone .050 (1.27 mm) and .250 (6.35 mm) from the seating plane.
4. When measured in a gauging plane .054 +.001, - .000 (1.37 +0.03, -0.00 mm) below the seating plane of the
transistor, maximum diameter leads shall be within .007 (0.18 mm) of their true location relative to a maximum
width tab. Smaller diameter leads shall fall within the outline of the maximum diameter lead tolerance.
5. Measured from the maximum diameter of the actual device.
6. All four leads.
7. Lead 1 = source, lead 2 = drain, lead 3 = gate, lead 4 = case.
8. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
* FIGURE 1. Physical dimensions 2N4416A.
3
MIL-PRF-19500/428E
Dimensions
Symbol
BH
BL
BW
CL
CW
LL1
LL2
LS1
LS2
LW
r
r1
r2
Min
.046
.115
.085
Inches
Max
.056
.128
.108
.128
.108
.038
.035
.040
.079
.024
.008
.012
.022
Millimeters
Min
Max
0.97
1.42
2.82
3.25
2.41
2.74
3.25
2.74
0.56
0.96
0.43
0.89
0.91
1.02
1.81
2.01
0.41
0.61
.203
.305
.559
Note
.022
.017
.036
.071
.016
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Hatched areas on package denote metallized areas (tungsten with gold plating 60 micro inches min over 80
micro inches min nickel.
4. Lid material: Kovar; Lid finish: Gold plating 50 micro inches min thick over 80 micro inches nickel.
5. Pad 1 = Source, Pad 2 = Drain, Pad 3 = Gate, Pad 4 = Shielding connected to the lid.
* FIGURE 2. Physical dimensions, surface mount (2N4416AUB).
4
MIL-PRF-19500/428E
3. REQUIREMENTS
*
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500 and as follows.
R
G
- - - - - - - - - - - - -
,
Transformed equivalent source resistance.
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figures 1 and 2.
3.4.1 Lead finish. Unless otherwise specified, lead finish shall be solderable in accordance with
MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the
acquisition document (see 6.2).
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I.
*
3.6 Electrical test requirements. The electrical test requirements shall be table I as specified herein.
* 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500, except for the UB suffix package. Marking
on the UB package shall consist of an abbreviated part number, the date code, and the manufacturers symbol or
logo. The prefixes JAN, JANTX, JANTXV, and JANS can be abbreviated as J, JX, JV, and JS respectively. The
"2N" prefix and the "AUB" suffix can also be omitted.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
5
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