General Purpose Transistors
General Purpose Transistors
DESCRIPTION & FEATURES
概述及特點
Excellent h
FE
Linearity h
FE
線性特性極½
FHT856/857/858
SOT-23
PIN ASSIGNMENT
引腳說明
PIN NAME
PIN NUMBER
引腳序號
管腳符號
SOT-23
B
1
E
2
C
3
MAXIMUM RATINGS(T
a
=25℃)
最大額定值
CHARACTERISTIC
特性參數
Collector-Emitter Voltage
集電極-發射極電壓
FUNCTION
功½
BASE
EMITTER
COLLECTOR
Symbol
符號
FHT856
V
CEO
FHT857
FHT858
FHT856
V
CBO
FHT857
FHT858
FHT856
V
EBO
FHT857
FHT858
I
C
Rating
額定值
-65
-45
-30
-80
-50
-30
-5
-5
-5
-100
Unit
單½
Vdc
Collector-Base Voltage
集電極-基極電壓
Vdc
Emitter-Base Voltage
發射極-基極電壓
Collector Current—Continuous
集電極電流-連續
Vdc
mAdc
THERMAL CHARACTERISTICS
熱特性
CHARACTERISTIC
特性參數
Total Device Dissipation
½耗散功率
FR-5 Board(1)
(T
A
=25℃
環境溫度=25℃)
Derate above25℃
超過
25℃遞減
Thermal Resistance Junction to Ambient
熱阻
Total Device Dissipation Alumina Substrate,(2) T
A
=25℃
½耗散功率 氧化鋁襯底
Derate above25℃
超過
25℃遞減
Thermal Resistance Junction to Ambient
熱阻
Junction and Storage Temperature結溫和儲存溫度
Symbol
符號
P
D
R
JA
P
D
R
JA
T
j
,
T
stg
Max
最大值
225
1.8
556
300
2.4
417
150，
-55 ~ 150
Unit
單½
mW
mW/℃
℃/W
mW
mW/℃
℃/W
℃
DEVICE MARKING
打標
FHT856A=3A (110~220),FHT856B=3B(200~450),
FHT857A=3E (110~220),FHT857B=3F(200~450),FHT857C=3H(420~800),
FHT858A=3J (110~220),FHT858B=3K(200~450),FHT858C=3T(420~800)
ELECTRICAL CHARACTERISTICS
電特性
(T
A
=25℃ unless otherwise noted
如無特殊說明，溫度為
25℃)
Test Condition
Min
Characteristic
特性參數
Symbol
符號
測試條件
最小值
Collector Cutoff Current
—
I
CBO
V
CB
=-30Vdc
集電極截止電流
Collector-Emitter
V
(BR)CEO
FHT856
I
C
=-10mAdc,
-65
1
Type
典型值
—
—
Max
最大值
-15
—
Unit
單½
nAdc
Vdc
General Purpose Transistors
General Purpose Transistors
Breakdown Voltage(3)
集電極-發射極擊穿電壓
Collector-Base Breakdown
Voltage
集電極-基極擊穿電壓
Emitter-Base Breakdown Voltage
FHT856/857/858
FHT857
FHT858
FHT856
FHT857
FHT858
FHT856
FHT857
FHT858
FHT856
FHT857
FHT858
I
B
=0
I
C
=-10µ
Adc,
I
E
=0
I
E
=-10µ
Adc,
I
C
=0
I
C
=-2.0mAdc,
V
CE
=-5.0Vdc
Ic=-10mAdc,
I
B
=-0.5mAdc
Ic=-100mAdc,
I
B
=-5.0mAdc
Ic=-10mAdc,
I
B
=-0.5mAdc
Ic=-100mAdc,
I
B
=-5.0mAdc
Ic=-2.0mAdc,
V
CE
=-5.0Vdc
Ic=-10mAdc,
V
CE
=-5.0Vdc
Ic=-10mAdc,
V
CE
=-5.0Vdc,
f=100MHz
V
CB
=-10Vdc,
I
E
=0,f=1.0MHz
R
S
=2.0kΩ,
BW=200Hz，
V
CE
=-5.0Vdc,
I
C
=-200μAdc,
f=1.0KHz
-45
-30
-80
-50
-30
-5.0
-5.0
-5.0
110
110
110
—
—
—
—
-600
—
100
—
V
(BR)CBO
—
—
Vdc
發射極-基極擊穿電壓
DC Current Gain
直流電流增益
V
(BR)EBO
—
—
—
—
—
—
-0.7
-0.9
—
—
—
—
—
450
800
800
-0.3
Vdc
—
—
—
Vdc
h
FE
Collector-Emitter Saturation
Voltage
集電極-發射極½和壓降
Base-Emitter Saturation
Voltage
基極-發射極½和壓降
Base-Emitter On Voltage
基極-發射極
導通電
壓
Current-Gain-Bandwidth
Product
電流增益-帶寬乘積
Output Capacitance
輸出電容
V
CE(sat)
-0.65
—
Vdc
—
-750
mV
-820
—
4
MHz
pF
V
BE(sat)
V
BE(on)
f
T
C
obo
Noise Figure
雜訊係數
NF
—
—
10.0
dB
1.
FR-5=1.0×0.75×0.062in.
2. Alumina=0.4×0.3×0.024in, 99.5%alumina.
3. Pulse Width≤300µS;Duty Cycle≤2.0％.
2
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