Operational Amplifier, 1 Func, 5000uV Offset-Max, BIMOS, PDIP8, PLASTIC, MO-001-BA, DIP-8
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Rochester Electronics |
| 零件包装代码 | DIP |
| 包装说明 | DIP, |
| 针数 | 8 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 放大器类型 | OPERATIONAL AMPLIFIER |
| 最大平均偏置电流 (IIB) | 0.00003 µA |
| 标称共模抑制比 | 90 dB |
| 最大输入失调电压 | 5000 µV |
| JESD-30 代码 | R-PDIP-T8 |
| JESD-609代码 | e0 |
| 长度 | 9.585 mm |
| 负供电电压上限 | -8 V |
| 标称负供电电压 (Vsup) | -7.5 V |
| 功能数量 | 1 |
| 端子数量 | 8 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | DIP |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 峰值回流温度(摄氏度) | NOT SPECIFIED |
| 座面最大高度 | 5.33 mm |
| 标称压摆率 | 30 V/us |
| 供电电压上限 | 8 V |
| 标称供电电压 (Vsup) | 7.5 V |
| 表面贴装 | NO |
| 技术 | BIMOS |
| 温度等级 | MILITARY |
| 端子面层 | TIN LEAD |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 标称均一增益带宽 | 15000 kHz |
| 宽度 | 7.62 mm |

| CA3130AE | CA3130BT | CA3130E | CA3130M | CA3130T | CA3130AM | CA3130AM96 | CA3130AT | |
|---|---|---|---|---|---|---|---|---|
| 描述 | Operational Amplifier, 1 Func, 5000uV Offset-Max, BIMOS, PDIP8, PLASTIC, MO-001-BA, DIP-8 | Operational Amplifier, 1 Func, 0uV Offset-Max, BIMOS, MBCY8, PACKAGE-8 | Operational Amplifier, 1 Func, 15000uV Offset-Max, BIMOS, PDIP8, PLASTIC, MO-001-BA, DIP-8 | Operational Amplifier, 1 Func, 15000uV Offset-Max, BIMOS, PDSO8, PACKAGE-8 | Operational Amplifier, 1 Func, 15000uV Offset-Max, BIMOS, MBCY8, PACKAGE-8 | Operational Amplifier, 1 Func, 5000uV Offset-Max, BIMOS, PDSO8, PLASTIC, MS-012-AA, SOIC-8 | Operational Amplifier, 1 Func, 5000uV Offset-Max, BIMOS, PDSO8, PLASTIC, MS-012-AA, SOIC-8 | Operational Amplifier, 1 Func, 5000uV Offset-Max, BIMOS, MBCY8, PACKAGE-8 |
| 零件包装代码 | DIP | BCY | DIP | SOIC | BCY | SOIC | SOIC | BCY |
| 包装说明 | DIP, | , | DIP, | SOP, | , | SOP, | SOP, | , |
| 针数 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknow |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 放大器类型 | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER |
| 最大输入失调电压 | 5000 µV | - | 15000 µV | 15000 µV | 15000 µV | 5000 µV | 5000 µV | 5000 µV |
| JESD-30 代码 | R-PDIP-T8 | O-MBCY-W8 | R-PDIP-T8 | R-PDSO-G8 | O-MBCY-W8 | R-PDSO-G8 | R-PDSO-G8 | O-MBCY-W8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 封装主体材料 | PLASTIC/EPOXY | METAL | PLASTIC/EPOXY | PLASTIC/EPOXY | METAL | PLASTIC/EPOXY | PLASTIC/EPOXY | METAL |
| 封装形状 | RECTANGULAR | ROUND | RECTANGULAR | RECTANGULAR | ROUND | RECTANGULAR | RECTANGULAR | ROUND |
| 封装形式 | IN-LINE | CYLINDRICAL | IN-LINE | SMALL OUTLINE | CYLINDRICAL | SMALL OUTLINE | SMALL OUTLINE | CYLINDRICAL |
| 表面贴装 | NO | NO | NO | YES | NO | YES | YES | NO |
| 技术 | BIMOS | BIMOS | BIMOS | BIMOS | BIMOS | BIMOS | BIMOS | BIMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子形式 | THROUGH-HOLE | WIRE | THROUGH-HOLE | GULL WING | WIRE | GULL WING | GULL WING | WIRE |
| 端子位置 | DUAL | BOTTOM | DUAL | DUAL | BOTTOM | DUAL | DUAL | BOTTOM |
| 是否无铅 | 含铅 | 含铅 | 含铅 | - | - | 含铅 | 含铅 | - |
| 厂商名称 | Rochester Electronics | - | Rochester Electronics | Rochester Electronics | Rochester Electronics | Rochester Electronics | Rochester Electronics | Rochester Electronics |
| 最大平均偏置电流 (IIB) | 0.00003 µA | - | 0.00005 µA | 0.00005 µA | 0.00005 µA | 0.00003 µA | 0.00003 µA | 0.00003 µA |
| 标称共模抑制比 | 90 dB | - | 90 dB | 90 dB | 90 dB | 90 dB | 90 dB | 90 dB |
| JESD-609代码 | e0 | e0 | e0 | - | - | e0 | e0 | - |
| 负供电电压上限 | -8 V | - | -8 V | -8 V | -8 V | -8 V | -8 V | -8 V |
| 标称负供电电压 (Vsup) | -7.5 V | - | -7.5 V | -7.5 V | -7.5 V | -7.5 V | -7.5 V | -7.5 V |
| 封装代码 | DIP | - | DIP | SOP | - | SOP | SOP | - |
| 峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - | NOT SPECIFIED | 240 | - |
| 标称压摆率 | 30 V/us | - | 30 V/us | 30 V/us | 30 V/us | 30 V/us | 30 V/us | 30 V/us |
| 供电电压上限 | 8 V | - | 8 V | 8 V | 8 V | 8 V | 8 V | 8 V |
| 标称供电电压 (Vsup) | 7.5 V | - | 7.5 V | 7.5 V | 7.5 V | 7.5 V | 7.5 V | 7.5 V |
| 端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | - | - | TIN LEAD | TIN LEAD | - |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - | NOT SPECIFIED | NOT SPECIFIED | - |
| 标称均一增益带宽 | 15000 kHz | - | 15000 kHz | 15000 kHz | 15000 kHz | 15000 kHz | 15000 kHz | 15000 kHz |
| 器件名 | 厂商 | 描述 |
|---|---|---|
| CA3130AE | Renesas(瑞萨电子) | IC OPAMP GP 15MHZ 8DIP |
| CA3130E | Rochester Electronics | Operational Amplifier, 1 Func, 15000uV Offset-Max, BIMOS, PDIP8, PLASTIC, MO-001-BA, DIP-8 |
| CA3130EZ | Renesas(瑞萨电子) | IC OPAMP GP 15MHZ 8DIP |
| JM38510/11403BPA | Precision Monolithics Inc | Operational Amplifier, 1 Func, 7000uV Offset-Max, BIPolar, CDIP8, HERMETIC SEALED, DIP-8 |
| JM38510/11403BPB | Precision Monolithics Inc | Operational Amplifier, 1 Func, 7000uV Offset-Max, BIPolar, CDIP8, HERMETIC SEALED, DIP-8 |
| JM38510/11406BPA | Precision Monolithics Inc | Operational Amplifier, 1 Func, 2500uV Offset-Max, BIPolar, CDIP8, HERMETIC SEALED, DIP-8 |
| LF157AD/883B | Raytheon Company | Operational Amplifier, 1 Func, 2500uV Offset-Max, BIPolar, CDIP8, CERAMIC, DIP-8 |
| LF357BN | National Semiconductor(TI ) | OP-AMP, 2500 uV OFFSET-MAX, 2.5 MHz BAND WIDTH, MBCY8 |
| M38510/11403BPX | Precision Monolithics Inc | Operational Amplifier, 1 Func, 7000uV Offset-Max, CDIP8, CERAMIC, DIP-8 |
| M38510/11406BPB | Precision Monolithics Inc | Operational Amplifier, 1 Func, 2500uV Offset-Max, CDIP8, CERAMIC, DIP-8 |
| M38510/11406BPX | Precision Monolithics Inc | Operational Amplifier, 1 Func, 2500uV Offset-Max, CDIP8, CERAMIC, DIP-8 |
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