8KX8 EEPROM 5V, 200ns, PDSO28, 0.300 INCH, PLASTIC, SO-28
参数名称 | 属性值 |
厂商名称 | ST(意法半导体) |
零件包装代码 | SOIC |
包装说明 | SOP, |
针数 | 28 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
最长访问时间 | 200 ns |
其他特性 | 32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS |
数据保留时间-最小值 | 40 |
JESD-30 代码 | R-PDSO-G28 |
长度 | 17.9 mm |
内存密度 | 65536 bit |
内存集成电路类型 | EEPROM |
内存宽度 | 8 |
功能数量 | 1 |
端子数量 | 28 |
字数 | 8192 words |
字数代码 | 8000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 8KX8 |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | SOP |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
并行/串行 | PARALLEL |
编程电压 | 5 V |
认证状态 | Not Qualified |
座面最大高度 | 2.65 mm |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 4.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子形式 | GULL WING |
端子节距 | 1.27 mm |
端子位置 | DUAL |
宽度 | 7.5 mm |
M28C64C-200MS1TR | M28C64C-150N6TR | M28C64C-150MS6TR | M28C64C-150MS1TR | M28C64C-200MS6TR | M28C64C-200N6TR | |
---|---|---|---|---|---|---|
描述 | 8KX8 EEPROM 5V, 200ns, PDSO28, 0.300 INCH, PLASTIC, SO-28 | 8KX8 EEPROM 5V, 150ns, PDSO28, 8 X 13.40 MM, PLASTIC, TSOP-28 | 8KX8 EEPROM 5V, 150ns, PDSO28, 0.300 INCH, PLASTIC, SO-28 | 8KX8 EEPROM 5V, 150ns, PDSO28, 0.300 INCH, PLASTIC, SO-28 | 8KX8 EEPROM 5V, 200ns, PDSO28, 0.300 INCH, PLASTIC, SO-28 | 8KX8 EEPROM 5V, 200ns, PDSO28, 8 X 13.40 MM, PLASTIC, TSOP-28 |
厂商名称 | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) |
零件包装代码 | SOIC | TSOP | SOIC | SOIC | SOIC | TSOP |
包装说明 | SOP, | LSSOP, | 0.300 INCH, PLASTIC, SO-28 | SOP, | SOP, | LSSOP, |
针数 | 28 | 28 | 28 | 28 | 28 | 28 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最长访问时间 | 200 ns | 150 ns | 150 ns | 150 ns | 200 ns | 200 ns |
JESD-30 代码 | R-PDSO-G28 | R-PDSO-G28 | R-PDSO-G28 | R-PDSO-G28 | R-PDSO-G28 | R-PDSO-G28 |
长度 | 17.9 mm | 11.8 mm | 17.9 mm | 17.9 mm | 17.9 mm | 11.8 mm |
内存密度 | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
内存集成电路类型 | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM |
内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 28 | 28 | 28 | 28 | 28 | 28 |
字数 | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words |
字数代码 | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 70 °C | 85 °C | 85 °C | 70 °C | 85 °C | 85 °C |
最低工作温度 | - | -40 °C | -40 °C | - | -40 °C | -40 °C |
组织 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | SOP | LSSOP | SOP | SOP | SOP | LSSOP |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE, LOW PROFILE, SHRINK PITCH | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE, LOW PROFILE, SHRINK PITCH |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
编程电压 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 2.65 mm | 1.25 mm | 2.65 mm | 2.65 mm | 2.65 mm | 1.25 mm |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | INDUSTRIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | INDUSTRIAL |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子节距 | 1.27 mm | 0.55 mm | 1.27 mm | 1.27 mm | 1.27 mm | 0.55 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
宽度 | 7.5 mm | 8 mm | 7.5 mm | 7.5 mm | 7.5 mm | 8 mm |
其他特性 | 32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS | 32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS | - | 32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS | 32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS | 32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS |
数据保留时间-最小值 | 40 | 40 | - | 40 | 40 | 40 |
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