MBM29DL16XTE/BE
70/90
(Continued)
• Single 3.0 V read, program, and erase
Minimizes system level power requirements
• Compatible with JEDEC-standard commands
Uses same software commands as E
2
PROMs
• Compatible with JEDEC-standard world-wide pinouts
48-pin TSOP(1) (Package suffix: TN – Normal Bend Type, TR – Reversed Bend Type)
48-ball FBGA (Package suffix: PBT)
• Minimum 100,000 program/erase cycles
• High performance
70 ns maximum access time
• Sector erase architecture
Eight 4K word and thirty one 32K word sectors in word mode
Eight 8K byte and thirty one 64K byte sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture
T = Top sector
B = Bottom sector
• HiddenROM region
64K byte of HiddenROM, accessible through a new “HiddenROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP/ACC input pin
At V
IL
, allows protection of boot sectors, regardless of sector group protection/unprotection status
At V
ACC
, increases program performance
• Embedded Erase
TM
* Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded Program
TM
* Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
• Low V
CC
write inhibit
≤
2.5 V
• Program Suspend/Resume
Suspends the program operation to allow a read in another sector with in the same device
• Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
• Sector group protection
Hardware method disables any combination of sector groups from program or erase operations
• Sector Group Protection Set function by Extended sector group protection command
• Fast Programming Function by Extended Command
• Temporary sector group unprotection
Temporary sector group unprotection via the RESET pin.
• In accordance with CFI (Common Flash Memory Interface)
*: Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
2
MBM29DL16XTE/BE
70/90
s
GENERAL DESCRIPTION
The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M
words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-ball FBGA Package.
These devices are designed to be programmed in-system with the standard system 3.0 V V
CC
supply. 12.0 V
V
PP
and 5.0 V V
CC
are not required for write or erase operations. The devices can also be reprogrammed in
standard EPROM programmers.
MBM29DL16XTE/BE are organized into two banks, Bank 1 and Bank 2, which are considered to be two separate
memory arrays for operations. It is the Fujitsu’s standard 3 V only Flash memories with the additional capability
of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either
a program or an erase) operation is simultaneously taking place on the other bank.
In the MBM29DL16XTE/BE, a new design concept is implemented, so called “Sliding Bank Architecture”. Under
this concept, the MBM29DL16XTE/BE can be produced a series of devices with different Bank 1/Bank 2 size
combinations; 0.5 Mb/15.5 Mb, 2 Mb/14 Mb, 4 Mb/12 Mb, 8 Mb/8 Mb.
The standard MBM29DL16XTE/BE offer access times 70 ns and 90 ns, allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the devices have separate chip enable (CE),
write enable (WE), and output enable (OE) controls.
The MBM29DL16XTE/BE are pin and command set compatible with JEDEC standard E
2
PROMs. Commands
are written to the command register using standard microprocessor write timings. Register contents serve as
input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally
latch addresses and data needed for the programming and erase operations. Reading data out of the devices
is similar to reading from 5.0 V and 12.0 V Flash or EPROM devices.
The MBM29DL16XTE/BE are programmed by executing the program command sequence. This will invoke the
Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths
and verifies proper cell margin. Typically, each sector can be programmed and verified in about 0.5 seconds.
Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase
Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed
before executing the erase operation. During erase, the devices automatically time the erase pulse widths and
verify proper cell margin.
A sector is typically erased and verified in 1.0 second. (If already completely preprogrammed.)
The devices also feature a sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. The MBM29DL16XTE/BE are erased when shipped from the
factory.
The devices feature single 3.0 V power supply operation for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low V
CC
detector automatically
inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ
7
,
by the Toggle Bit feature on DQ
6
, or the RY/BY output pin. Once the end of a program or erase cycle has been
completed, the devices internally reset to the read mode.
Fujitsu’s Flash technology combines years of EPROM and E
2
PROM experience to produce the highest levels
of quality, reliability, and cost effectiveness. The MBM29DL16XTE/BE memories electrically erase the entire chip
or all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one
byte/word at a time using the EPROM programming mechanism of hot electron injection.
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