SBYV26C
Vishay General Semiconductor
Glass Passivated Ultrafast Rectifier
FEATURES
®
*Glass Encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
to Patent No. 3,930,306
ted*
aten
P
DO-204AL (DO-41)
•
•
•
•
•
•
•
•
•
•
Cavity-free glass-passivated junction
Ideal for printed circuit boards
Ultrafast reverse recovery time
Low forward voltage drop
Low leakage current
Low switching losses, high efficiency
High forward surge capability
Meets environmental standard MIL-S-19500
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
MAJOR RATINGS AND CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
j
max.
1.0 A
600 V
30 A
30 ns
1.3 V
175 °C
TYPICAL APPLICATIONS
For use in high frequency rectification and free-
wheeling application in switching mode converters
and inverters for consumer, computer and
telecommunication.
MECHANICAL DATA
Case:
DO-204AL, molded plastic over glass body
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 0.375" (9.5 mm)
lead length at T
L
= 85 °C (see Fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Non repetitive peak reverse energy
(1)
Operating junction and storage temperature range
Note:
(1) Peak reverse energy measured with 8/20 µs surge
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
E
RSM
T
J
, T
STG
VALUE
600
420
600
1.0
30
5.0
- 65 to + 175
UNIT
V
V
V
A
A
mJ
°C
Document Number 88735
24-May-06
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1
SBYV26C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Minimum avalanche
breakdown voltage
Maximum instantaneous
forward voltage
Maximum DC reverse current
at rated DC blocking voltage
Max. reverse recovery time
Maximum junction capacitance
Maximum reverse recovery
current slope
at 4.0 V, 1 MHz
at I
F
= 1 A, V
R
= 30 V, di
f
/dt = - 1 A/µs
TEST CONDITIONS
at 100 µA
at 1.0 A
T
J
= 25 °C
T
J
= 175 °C
T
A
= 25 °C
T
A
= 165 °C
at I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
SYMBOL
V
BR
V
F
I
R
t
rr
C
J
di
r
/dt
VALUE
600
2.5
1.3
5.0
150
30
45
7.0
UNIT
V
V
µA
ns
pF
A/µs
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
(1,2)
Note:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads
(2) Thermal resistance from junction to lead at 0.375" (9.5 mm) lead length with both leads attached to heatsink
SYMBOL
R
θJA
R
θJL
VALUE
70
16
UNIT
°C/W
ORDERING INFORMATION
PREFERRED P/N
SBYV26C-E3/54
SBYV26C-E3/73
UNIT WEIGHT (g)
0.339
0.339
PREFERRED PACKAGE CODE
54
73
BASE QUANTITY
5500
3000
DELIVERY MODE
13" Diameter Paper Tape & Reel
Ammo Pack Packaging
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
1.2
1.8
D = 0.8
T
L
1.0
Lead mounted on
heatsink
1.6
D = 0.3
D = 0.2
D = 0.1
D = 1.0
D = 0.5
Average Forward Rectified Current (A)
Average Power Loss (W)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.8
T
A
0.6
0.4
Mounted on P.C.B.
0.2
0
0
25
50
75
100
125
150
175
T
D = tp/T
tp
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Temperature (°C)
Average Forward Current (A)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics
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Document Number 88735
24-May-06
SBYV26C
Vishay General Semiconductor
100
100
T
J
= T
J
max.
10 ms Single Half Sine-Wave
Peak Forward Surge Current (A)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
10
10
1
1
10
100
1
0.1
1
10
100
Number
of Cycles at 50 Hz
Reverse
Voltage
(V)
Figure 3. Maximum Non-Repetitive Peak Forward Surge Current
Figure 6. Typical Junction Capacitance
100
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Instantaneous Forward Current (A)
10
T
J
= 165 °C
T
J
= 125 °C
1
T
J
= 25 °C
Junction Capacitance (pF)
4.0
10
0.1
Pulse
Width
= 300
µs
1 % Duty Cycle
0.01
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 4. Typical Instantaneous Forward Characteristics
Figure 7. Typical Transient Thermal Impedance
100
Instantaneous Reverse Leakage
Current (µA)
10
T
J
= 165 °C
1
T
J
= 125 °C
0.1
0.01
T
J
= 25 °C
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse
Voltage
(%)
Figure 5. Typical Reverse Leakage Characteristics
Document Number 88735
24-May-06
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SBYV26C
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
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Document Number 88735
24-May-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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