Datasheet> 器件分类 > 分立半导体> 晶体管> BTS114AE3045

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BTS114AE3045: 产品描述Power Field-Effect Transistor, 17A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; 产品类别分立半导体晶体管; 文件大小186KB，共9页; 制造商SIEMENS; 官网地址http://www.infineon.com/

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BTS114AE3045概述

Power Field-Effect Transistor, 17A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

BTS114AE3045规格参数

参数名称	属性值
厂商名称	SIEMENS
包装说明	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown
ECCN代码	EAR99
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
最小漏源击穿电压	50 V
最大漏极电流 (ID)	17 A
最大漏源导通电阻	0.1 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PSSO-G2
元件数量	1
端子数量	2
工作模式	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	N-CHANNEL
最大脉冲漏极电流 (IDM)	68 A
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	SINGLE
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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BTS114AE3045相似产品对比

	BTS114AE3045	BTS114A-E3044	BTS114AE3044	BTS114AE3045A
描述	Power Field-Effect Transistor, 17A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	17A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, 3 PIN	Power Field-Effect Transistor, 17A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN	Power Field-Effect Transistor, 17A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
厂商名称	SIEMENS	SIEMENS	SIEMENS	SIEMENS
包装说明	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G3	SMALL OUTLINE, R-PSSO-G3	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown	unknown	unknown	unknown
外壳连接	DRAIN	DRAIN	DRAIN	DRAIN
配置	SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR	SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR	SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR	SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
最小漏源击穿电压	50 V	50 V	50 V	50 V
最大漏极电流 (ID)	17 A	17 A	17 A	17 A
最大漏源导通电阻	0.1 Ω	0.1 Ω	0.1 Ω	0.1 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PSSO-G2	R-PSSO-G3	R-PSSO-G3	R-PSSO-G2
元件数量	1	1	1	1
端子数量	2	3	3	2
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	68 A	68 A	68 A	68 A
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1
ECCN代码	EAR99	-	EAR99	EAR99

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