Standard SRAM, 4KX1, 135ns, CMOS, CDIP18,
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Marconi Electronic Devices Inc |
| 包装说明 | DIP, DIP18,.3 |
| Reach Compliance Code | unknown |
| 最长访问时间 | 135 ns |
| I/O 类型 | SEPARATE |
| JESD-30 代码 | R-XDIP-T18 |
| JESD-609代码 | e0 |
| 内存密度 | 4096 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 1 |
| 端子数量 | 18 |
| 字数 | 4096 words |
| 字数代码 | 4000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 4KX1 |
| 输出特性 | 3-STATE |
| 封装主体材料 | CERAMIC |
| 封装代码 | DIP |
| 封装等效代码 | DIP18,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 筛选级别 | MIL-STD-883 Class B (Modified) |
| 最大待机电流 | 0.0005 A |
| 最小待机电流 | 2 V |
| 最大压摆率 | 0.012 mA |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 总剂量 | 100k Rad(Si) V |
| MAR5104CB9 | MAR5104CS2 | MAS5104CS0 | MAS5104FS2 | MAS5104FS0 | MAR5104CB1 | MAR5104FB1 | MAR5104FS0 | MAR5104FS2 | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | Standard SRAM, 4KX1, 135ns, CMOS, CDIP18, | Standard SRAM, 4KX1, 135ns, CMOS, CDIP18, | Standard SRAM, 4KX1, 135ns, CMOS, CDIP18, | Standard SRAM, 4KX1, 135ns, CMOS, CQFP24, | Standard SRAM, 4KX1, 135ns, CMOS, CQFP24, | Standard SRAM, 4KX1, 135ns, CMOS, CDIP18, | Standard SRAM, 4KX1, 135ns, CMOS, CQFP24, | Standard SRAM, 4KX1, 135ns, CMOS, CQFP24, | Standard SRAM, 4KX1, 135ns, CMOS, CQFP24, |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 包装说明 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 | QFF, QFL24,.4SQ | QFF, QFL24,.4SQ | DIP, DIP18,.3 | QFF, QFL24,.4SQ | QFF, QFL24,.4SQ | QFF, QFL24,.4SQ |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknow |
| 最长访问时间 | 135 ns | 135 ns | 135 ns | 135 ns | 135 ns | 135 ns | 135 ns | 135 ns | 135 ns |
| I/O 类型 | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE |
| JESD-30 代码 | R-XDIP-T18 | R-XDIP-T18 | R-XDIP-T18 | S-XQFP-F24 | S-XQFP-F24 | R-XDIP-T18 | S-XQFP-F24 | S-XQFP-F24 | S-XQFP-F24 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 4096 bit | 4096 bit | 4096 bit | 4096 bit | 4096 bit | 4096 bit | 4096 bit | 4096 bit | 4096 bi |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 18 | 18 | 18 | 24 | 24 | 18 | 24 | 24 | 24 |
| 字数 | 4096 words | 4096 words | 4096 words | 4096 words | 4096 words | 4096 words | 4096 words | 4096 words | 4096 words |
| 字数代码 | 4000 | 4000 | 4000 | 4000 | 4000 | 4000 | 4000 | 4000 | 4000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 组织 | 4KX1 | 4KX1 | 4KX1 | 4KX1 | 4KX1 | 4KX1 | 4KX1 | 4KX1 | 4KX1 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC |
| 封装代码 | DIP | DIP | DIP | QFF | QFF | DIP | QFF | QFF | QFF |
| 封装等效代码 | DIP18,.3 | DIP18,.3 | DIP18,.3 | QFL24,.4SQ | QFL24,.4SQ | DIP18,.3 | QFL24,.4SQ | QFL24,.4SQ | QFL24,.4SQ |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | SQUARE | SQUARE | RECTANGULAR | SQUARE | SQUARE | SQUARE |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | FLATPACK | FLATPACK | IN-LINE | FLATPACK | FLATPACK | FLATPACK |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 筛选级别 | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class S (Modified) | MIL-STD-883 Class S (Modified) | MIL-STD-883 Class S (Modified) | MIL-STD-883 Class S (Modified) | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class S (Modified) | MIL-STD-883 Class S (Modified) |
| 最大待机电流 | 0.0005 A | 0.0005 A | 0.0005 A | 0.0005 A | 0.0005 A | 0.0005 A | 0.0005 A | 0.0005 A | 0.0005 A |
| 最小待机电流 | 2 V | 2 V | 2 V | 2 V | 2 V | 2 V | 2 V | 2 V | 2 V |
| 最大压摆率 | 0.012 mA | 0.012 mA | 0.012 mA | 0.012 mA | 0.012 mA | 0.012 mA | 0.012 mA | 0.012 mA | 0.012 mA |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | YES | YES | NO | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | FLAT | FLAT | THROUGH-HOLE | FLAT | FLAT | FLAT |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 1.27 mm | 1.27 mm | 2.54 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | QUAD | QUAD | DUAL | QUAD | QUAD | QUAD |
| 厂商名称 | Marconi Electronic Devices Inc | Marconi Electronic Devices Inc | - | Marconi Electronic Devices Inc | Marconi Electronic Devices Inc | Marconi Electronic Devices Inc | Marconi Electronic Devices Inc | Marconi Electronic Devices Inc | Marconi Electronic Devices Inc |
| 总剂量 | 100k Rad(Si) V | 100k Rad(Si) V | - | - | - | 100k Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V |
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