64X16 MICROWIRE BUS SERIAL EEPROM, PDSO8, 0.169 INCH, TSSOP-8
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | ST(意法半导体) |
零件包装代码 | SOIC |
包装说明 | 0.169 INCH, TSSOP-8 |
针数 | 8 |
Reach Compliance Code | not_compliant |
ECCN代码 | EAR99 |
备用内存宽度 | 8 |
最大时钟频率 (fCLK) | 2 MHz |
数据保留时间-最小值 | 40 |
耐久性 | 1000000 Write/Erase Cycles |
JESD-30 代码 | R-PDSO-G8 |
JESD-609代码 | e0 |
长度 | 4.4 mm |
内存密度 | 1024 bit |
内存集成电路类型 | EEPROM |
内存宽度 | 16 |
功能数量 | 1 |
端子数量 | 8 |
字数 | 64 words |
字数代码 | 64 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 125 °C |
最低工作温度 | -40 °C |
组织 | 64X16 |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | TSSOP |
封装等效代码 | TSSOP8,.25 |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
并行/串行 | SERIAL |
峰值回流温度(摄氏度) | NOT SPECIFIED |
电源 | 3/5 V |
认证状态 | Not Qualified |
座面最大高度 | 1.2 mm |
串行总线类型 | MICROWIRE |
最大待机电流 | 0.000005 A |
最大压摆率 | 0.002 mA |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 2.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | AUTOMOTIVE |
端子面层 | TIN LEAD |
端子形式 | GULL WING |
端子节距 | 0.65 mm |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
宽度 | 3 mm |
最长写入周期时间 (tWC) | 5 ms |
写保护 | SOFTWARE |
M93C46-WDW3T/W | M93C46-TMN6T | M93C46-WBN3/W | M93C46-MN3T/W | M93C46-WMN3/W | M93C46-MN3/W | M93C46-WBN7/W | M93C46-BN3/W | |
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描述 | 64X16 MICROWIRE BUS SERIAL EEPROM, PDSO8, 0.169 INCH, TSSOP-8 | 64X16 MICROWIRE BUS SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SO-8 | 64X16 MICROWIRE BUS SERIAL EEPROM, PDIP8, PLASTIC, DIP-8 | 64X16 MICROWIRE BUS SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SOP-8 | 64X16 MICROWIRE BUS SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SOP-8 | 64X16 MICROWIRE BUS SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SOP-8 | IC,SERIAL EEPROM,64X16/128X8,CMOS,DIP,8PIN,PLASTIC | 64X16 MICROWIRE BUS SERIAL EEPROM, PDIP8, PLASTIC, DIP-8 |
是否Rohs认证 | 不符合 | 符合 | 不符合 | 符合 | 不符合 | 符合 | 不符合 | 符合 |
Reach Compliance Code | not_compliant | compliant | not_compliant | compliant | not_compliant | compliant | not_compliant | compliant |
备用内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
数据保留时间-最小值 | 40 | 40 | 40 | 40 | 40 | 40 | 40 | 40 |
耐久性 | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles |
JESD-30 代码 | R-PDSO-G8 | R-PDSO-G8 | R-PDIP-T8 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 | R-PDIP-T8 | R-PDIP-T8 |
内存密度 | 1024 bit | 1024 bit | 1024 bit | 1024 bit | 1024 bit | 1024 bit | 1024 bit | 1024 bit |
内存集成电路类型 | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM |
内存宽度 | 16 | 16 | 16 | 16 | 16 | 16 | 16 | 16 |
端子数量 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
字数 | 64 words | 64 words | 64 words | 64 words | 64 words | 64 words | 64 words | 64 words |
字数代码 | 64 | 64 | 64 | 64 | 64 | 64 | 64 | 64 |
最高工作温度 | 125 °C | 85 °C | 125 °C | 125 °C | 125 °C | 125 °C | 105 °C | 125 °C |
最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
组织 | 64X16 | 64X16 | 64X16 | 64X16 | 64X16 | 64X16 | 64X16 | 64X16 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | TSSOP | SOP | DIP | SOP | SOP | SOP | DIP | DIP |
封装等效代码 | TSSOP8,.25 | SOP8,.25 | DIP8,.3 | SOP8,.25 | SOP8,.25 | SOP8,.25 | DIP8,.3 | DIP8,.3 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE | IN-LINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | IN-LINE |
并行/串行 | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL |
电源 | 3/5 V | 5 V | 3/5 V | 5 V | 3/5 V | 5 V | 3/5 V | 5 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
串行总线类型 | MICROWIRE | MICROWIRE | MICROWIRE | MICROWIRE | MICROWIRE | MICROWIRE | MICROWIRE | MICROWIRE |
最大待机电流 | 0.000005 A | 0.000015 A | 0.000005 A | 0.000015 A | 0.000005 A | 0.000015 A | 0.000015 A | 0.000015 A |
最大压摆率 | 0.002 mA | 0.002 mA | 0.002 mA | 0.002 mA | 0.002 mA | 0.002 mA | 0.002 mA | 0.002 mA |
表面贴装 | YES | YES | NO | YES | YES | YES | NO | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | AUTOMOTIVE | INDUSTRIAL | AUTOMOTIVE | AUTOMOTIVE | AUTOMOTIVE | AUTOMOTIVE | INDUSTRIAL | AUTOMOTIVE |
端子形式 | GULL WING | GULL WING | THROUGH-HOLE | GULL WING | GULL WING | GULL WING | THROUGH-HOLE | THROUGH-HOLE |
端子节距 | 0.65 mm | 1.27 mm | 2.54 mm | 1.27 mm | 1.27 mm | 1.27 mm | 2.54 mm | 2.54 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
写保护 | SOFTWARE | SOFTWARE | SOFTWARE | SOFTWARE | SOFTWARE | SOFTWARE | SOFTWARE | SOFTWARE |
厂商名称 | ST(意法半导体) | - | - | - | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) |
零件包装代码 | SOIC | SOIC | DIP | SOIC | SOIC | SOIC | - | DIP |
包装说明 | 0.169 INCH, TSSOP-8 | 0.150 INCH, PLASTIC, SO-8 | PLASTIC, DIP-8 | 0.150 INCH, PLASTIC, SOP-8 | 0.150 INCH, PLASTIC, SOP-8 | 0.150 INCH, PLASTIC, SOP-8 | - | DIP, DIP8,.3 |
针数 | 8 | 8 | 8 | 8 | 8 | 8 | - | 8 |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | - | EAR99 |
最大时钟频率 (fCLK) | 2 MHz | 2 MHz | 2 MHz | 2 MHz | 2 MHz | 2 MHz | - | 2 MHz |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | - |
长度 | 4.4 mm | 4.9 mm | 9.27 mm | 4.9 mm | 4.9 mm | 4.9 mm | - | 9.27 mm |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | - | 1 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | - | SYNCHRONOUS |
座面最大高度 | 1.2 mm | 1.75 mm | 5.33 mm | 1.75 mm | 1.75 mm | 1.75 mm | - | 5.33 mm |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | - | 5.5 V |
最小供电电压 (Vsup) | 2.5 V | 4.5 V | 2.5 V | 4.5 V | 2.5 V | 4.5 V | - | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | - | 5 V |
端子面层 | TIN LEAD | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | TIN LEAD | TIN LEAD | TIN LEAD | Tin/Lead (Sn/Pb) | - |
宽度 | 3 mm | 3.9 mm | 7.62 mm | 3.9 mm | 3.9 mm | 3.9 mm | - | 7.62 mm |
最长写入周期时间 (tWC) | 5 ms | 5 ms | 5 ms | 5 ms | 5 ms | 5 ms | - | 5 ms |
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