FFB2222A / FMB2222A / MMPQ2222A
FFB2222A
E2
B2
C1
FMB2222A
C2
E1
C1
MMPQ2222A
E2
B2
E3
B3
E4
B4
E1
B1
SC70-6
Mark: .1P
pin #1
C2
B1
E1
pin #1
B1
B2
E2
SOIC-16
Mark:
MMPQ2222A
pin #1
C1
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
SuperSOT
-6
Mark: .1P
Dot denotes pin #1
C2
C1
C3
C2
C4
C4
C3
NPN Multi-Chip General Purpose Amplifier
This device is for use as a medium power amplifier and switch requiring collector
currents up to 500 mA. Sourced from Process 19.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Collector-Emitter Voltage
T
A
= 25°C unless otherwise noted
Parameter
Value
40
75
5.0
500
-55 to +150
Units
V
V
V
mA
°C
4
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
T
A
= 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
FFB2222A
300
2.4
415
Max
FMB2222A
700
5.6
180
MMPQ2222A
1,000
8.0
125
240
Units
mW
mW/°C
°C/W
°C/W
°C/W
1998 Fairchild Semiconductor Corporation
FFB2222A / FMB2222A / MMPQ2222A
NPN Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 10
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 60 V, I
E
= 0
V
EB
= 3.0 V, I
C
= 0
40
75
5.0
10
10
V
V
V
nA
nA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V*
I
C
= 150 mA, V
CE
= 1.0 V*
I
C
= 500 mA, V
CE
= 10 V*
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
35
50
75
100
50
40
300
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage*
Base-Emitter Saturation Voltage*
0.3
1.0
1.2
2.0
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
C
ibo
NF
Current Gain - Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
I
C
= 20 mA, V
CE
= 20 V,
f = 100 MHz
V
CB
= 10 V, I
E
= 0, f = 100 kHz
V
EB
= 0.5 V, I
C
= 0, f = 100 kHz
I
C
= 100
µA,
V
CE
= 10 V,
R
S
= 1.0 kΩ, f = 1.0 kHz
300
4.0
20
2.0
MHz
pF
pF
dB
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
Delay Time
Rise Time
Storage Time
Fall Time
V
CC
= 30 V, V
BE(OFF)
= 0.5 V,
I
C
= 150 mA, I
B1
= 15 mA
V
CC
= 30 V, I
C
= 150 mA,
I
B1
= I
B2
= 15 mA
8
20
180
40
ns
ns
ns
ns
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
Spice Model
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6
Vtf=1.7 Xtf=3 Rb=10)
FFB2222A / FMB2222A / MMPQ2222A
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
500
V
CE
= 5V
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
0.4
β
= 10
0.3
400
300
200
25 °C
125 °C
0.2
25 °C
125 °C
100
- 40 °C
0.1
- 40 °C
0
0.1
0.3
1
3
10
30
100
I
C
- COLLECTOR CURRENT (mA)
300
1
10
100
I
C
- COLLECTOR CURRENT (mA)
500
V
BE(ON)
- BASE-EMITTER ON VOLTAGE (V)
V
BESAT
- BASE-EMITTER VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
β
= 10
- 40 °C
Base-Emitter ON Voltage vs
Collector Current
1
V
CE
= 5V
0.8
- 40 °C
25 °C
0.8
25 °C
125 °C
0.6
125 °C
0.6
0.4
4
25
0.4
1
I
C
10
100
- COLLECTOR CURRENT (mA)
500
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
500
100
10
1
0.1
V
CB
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
20
CAPACITANCE (pF)
16
12
C te
= 40V
f = 1 MHz
8
C ob
4
25
50
75
100
125
T
A
- AMBIENT TEMPERATURE (
°
C)
150
0.1
1
10
REVERSE BIAS VOLTAGE (V)
100
FFB2222A / FMB2222A / MMPQ2222A
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Turn On and Turn Off Times
vs Collector Current
400
I
B1
= I
B2
=
I
c
10
Switching Times
vs Collector Current
400
I
B1
= I
B2
=
320
V cc = 25 V
I
c
10
320
V cc = 25 V
TIME (nS)
240
160
t off
TIME (nS)
240
160
80
0
10
tf
td
ts
tr
80
t on
0
10
100
I
C
- COLLECTOR CURRENT (mA)
1000
100
I
C
- COLLECTOR CURRENT (mA)
1000
Power Dissipation vs
Ambient Temperature
P
D
- POWE R DIS SIPATION (W)
1
SOIC-16
0.75
SOT-6
0.5
SC70 -6
0.25
0
0
25
50
75
100
TE MPE RATURE (
°
C)
125
150
FFB2222A / FMB2222A / MMPQ2222A
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Common Emitter Characteristics
(f = 1.0kHz)
CHAR. RELATIVE TO VALUES AT I
C
= 10mA
CHAR. RELATIVE TO VALUES AT T
A
= 25
o
C
Common Emitter Characteristics
8
V
CE
= 10 V
T
A
= 25
o
C
Common Emitter Characteristics
2.4
2
1.6
1.2
0.8
0.4
0
V
CE
= 10 V
I
C
= 10 mA
h
re
h
ie
h
fe
h
oe
6
h
oe
4
h
re
2
h
fe
h
ie
0
0
10
20
30
40
50
I
C
- COLLECTOR CURRENT (mA)
60
0
20
40
60
80
T
A
- AMBIENT TEMPERATURE (
o
C)
100
CHAR. RELATIVE TO VALUES AT V
CE
= 10V
Common Emitter Characteristics
1.3
1.25
1.2
1.15
1.1
1.05
1
0.95
0.9
0.85
0.8
0.75
0
5
h
oe
10
15
20
25
30
V
CE
- COLLECTOR VOLTAGE (V)
35
h
re
h
ie
I
C
= 10 mA
T
A
= 25
o
C
h
fe
4
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