FFB3906 / FMB3906 / MMPQ3906
FFB3906
E2
B2
C1
FMB3906
C2
E1
C1
E1
MMPQ3906
E2
B2
E3
B3
E4
B4
B1
SC70-6
Mark: .2A
pin #1
C2
B1
E1
pin #1
B1
B2
E2
C2
C1
C3
C2
C4
C4
C3
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
SuperSOT
-6
Mark: .2A
Dot denotes pin #1
SOIC-16
Mark: MMPQ3906
pin #1
C1
PNP Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at collector currents of 10
µA
to 100 mA. Sourced
from Process 66.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
T
A
= 25°C unless otherwise noted
Parameter
Value
40
40
5.0
200
-55 to +150
Units
V
V
V
mA
°C
4
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3)
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
P
D
R
θJA
T
A
= 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
FFB3906
300
2.4
415
Max
FMB3906
700
5.6
180
MMPQ3906
1,000
8.0
125
240
Units
mW
mW/°C
°C/W
°C/W
°C/W
1998 Fairchild Semiconductor Corporation
FFB3906 / FMB3906 / MMPQ3906
PNP Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
C
= 10
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CE
= 30 V, V
BE
= 3.0 V
V
CE
= 30 V, V
BE
= 3.0 V
40
40
5.0
50
50
V
V
V
nA
nA
ON CHARACTERISTICS
h
FE
DC Current Gain *
I
C
= 0.1 mA, V
CE
= 1.0 V
MMPQ3906
I
C
= 1.0 mA, V
CE
= 1.0 V
MMPQ3906
I
C
= 10 mA, V
CE
= 1.0 V
MMPQ3906
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
60
40
80
60
100
75
60
30
300
V
CE(sat)
V
BE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.65
0.25
0.4
0.85
0.95
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
C
ibo
Current Gain - Bandwidth Product
Output Capacitance
Input Capacitance
(MMPQ3906 only)
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
V
CB
= 5.0 V, I
E
= 0,
f = 140 kHz
V
EB
= 0.5 V, I
C
= 0,
f = 140 kHz
200
4.5
10
MHz
pF
pF
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
NOTE:
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4
Xtf=6 Rb=10)
FFB3906 / FMB3906 / MMPQ3906
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
V
CESAT
- COLLECTOR EMITTER VOLTAGE (V)
h
F E
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
250
V
CE
= 1 .0V
125 °C
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25
0.2
0.15
0.1
125°C
25 °C
β
= 10
200
150
25 °C
100
- 40 °C
0.05
0
- 40 °C
50
0.1
0.2
0.5 1
2
5
10 20
I
C
- COLLECTOR CURRE NT (mA)
50
100
1
10
100
I
C
- COLLECTOR CURRENT (mA)
200
V
BE( ON)
- BASE EMITTER ON VOLTAGE (V)
V
BESAT
- BASE EM ITTE R VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
0.8
25 °C
Base Emitter ON Voltage vs
Collector Current
1
0.8
- 40 °C
β
= 10
- 40 °C
0.6
0.4
0.2
0
125 °C
0.6
0.4
0.2
0
0.1
25 °C
125 °C
V
CE
= 1V
4
25
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
200
1
10
I
C
- COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLE CTOR CURRENT (nA)
100
V
10
CB
Common-Base Open Circuit
Input and Output Capacitance
vs Reverse Bias Voltage
10
C obo
= 25V
CAPACITANCE (pF)
8
6
4
2
0
0.1
C ibo
1
0.1
0.01
25
50
75
100
T
A
- AMBIE NT TEMP ERATURE (
°
C)
125
1
REVERSE BIAS VOLTAGE (V)
10
FFB3906 / FMB3906 / MMPQ3906
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Noise Figure vs Frequency
6
V
CE
= 5.0V
NF - NOISE FIGURE (dB)
5
4
3
2
I C = 1.0 mA, R S = 200Ω
I C = 100
µA,
R S = 200Ω
Noise Figure vs Source Resistance
12
NF - NOISE FIGURE (dB)
10
8
6
4
I C = 100
µA
I C = 1.0 mA
V
CE
= 5.0V
f = 1.0 kHz
1
0
0.1
I C = 100
µA,
R S = 2.0 kΩ
2
0
0.1
1
10
f - FREQUENCY (kHz)
100
1
10
R
S
- SOURCE RESISTANCE (
kΩ
)
100
Switching Times
vs Collector Current
500
ts
Turn On and Turn Off Times
vs Collector Current
500
t off
I
c
t on
I
B1
=
10
100
TIME (nS)
100
TIME (nS)
tf
t on
10
I
B1
= I
B2
=
I
c
10
tr
10
V
BE(OFF)
= 0.5V
I
c
t off
I = I =
B1
B2
10
td
1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
1
1
I
10
- COLLECTOR CURRENT (mA)
100
Power Dissipation vs
Ambient Temperature
1
P
D
- POWER DISSIPATION (W)
SOIC-16
0.75
SOT-6
0.5
SC70-6
0.25
0
0
25
50
75
100
TEMPERATURE (º C)
125
150
FFB3906 / FMB3906 / MMPQ3906
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Voltage Feedback Ratio
100
Input Impedance
10
h
ie
- INPUT IMPEDANCE (k
Ω
)
V
CE
= 10 V
f = 1.0 kHz
_
h
re
- VOLTAGE FEEDBACK RATIO (x10
4
)
10
1
1
0.1
1
I
C
- COLLE CTOR CURRENT (mA)
10
0.1
0.1
1
I
C
- COLLECTOR CURRENT (mA)
10
Output Admittance
h
oe
- OUTPUT ADMITTANCE (
µ
mhos)
1000
V
CE
= 10 V
f = 1.0 kHz
h
fe
- CURRENT GAIN
1000
500
Current Gain
V
CE
= 10 V
f = 1.0 kHz
200
100
50
100
20
4
1
I
C
- COLLECTOR CURRENT (mA)
10
10
0.1
1
I
C
- COLLECTOR CURRENT ( mA)
10
10
0.1
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