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HY57V56420BLT-6

产品描述Synchronous DRAM, 64MX4, 5.4ns, CMOS, PDSO54, 0.875 X 0.400 INCH, 0.80 MM PITCH, TSOP2-54
产品类别存储    存储   
文件大小151KB,共12页
制造商SK Hynix(海力士)
官网地址http://www.hynix.com/eng/
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HY57V56420BLT-6概述

Synchronous DRAM, 64MX4, 5.4ns, CMOS, PDSO54, 0.875 X 0.400 INCH, 0.80 MM PITCH, TSOP2-54

HY57V56420BLT-6规格参数

参数名称属性值
厂商名称SK Hynix(海力士)
零件包装代码TSOP2
包装说明TSOP2, TSOP54,.46,32
针数54
Reach Compliance Codeunknown
ECCN代码EAR99
访问模式FOUR BANK PAGE BURST
最长访问时间5.4 ns
其他特性AUTO/SELF REFRESH
最大时钟频率 (fCLK)166 MHz
I/O 类型COMMON
交错的突发长度1,2,4,8
JESD-30 代码R-PDSO-G54
JESD-609代码e6
长度22.238 mm
内存密度268435456 bit
内存集成电路类型SYNCHRONOUS DRAM
内存宽度4
功能数量1
端口数量1
端子数量54
字数67108864 words
字数代码64000000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织64MX4
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码TSOP2
封装等效代码TSOP54,.46,32
封装形状RECTANGULAR
封装形式SMALL OUTLINE, THIN PROFILE
电源3.3 V
认证状态Not Qualified
刷新周期8192
座面最大高度1.194 mm
自我刷新YES
连续突发长度1,2,4,8,FP
最大待机电流0.001 A
最大压摆率0.24 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层TIN BISMUTH
端子形式GULL WING
端子节距0.8 mm
端子位置DUAL
宽度10.16 mm

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HY57V56420B(L)T
4 Banks x 16M x 4Bit Synchronous DRAM
DESCRIPTION
The HY57V56420B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large
memory density and high bandwidth. HY57V56420B is organized as 4banks of 16,777,216x4.
HY57V56420B is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized
with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage
levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated by
a single control command (Burst length of 1,2,4,8 or full page), and the burst count sequence(sequential or interleave). A burst of read or
write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst read or
write command on any cycle. (This pipelined design is not restricted by a `2N` rule.)
FEATURES
Single 3.3±0.3V power supply
All device pins are compatible with LVTTL interface
JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin
pitch
All inputs and outputs referenced to positive edge of system
clock
Data mask function by DQM
Internal four banks operation
Auto refresh and self refresh
8192 refresh cycles / 64ms
Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or Full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
Programmable CAS Latency ; 2, 3 Clocks
ORDERING INFORMATION
Part No.
HY57V56420BT-6
HY57V56420BT-K
HY57V56420BT-H
HY57V56420BT-8
HY57V56420BT-P
HY57V56420BT-S
HY57V56420BLT-6
HY57V56420BLT-K
HY57V56420BLT-H
HY57V56420BLT-8
HY57V56420BLT-P
HY57V56420BLT-S
Clock Frequency
166MHz
133MHz
133MHz
125MHz
100MHz
100MHz
166MHz
133MHz
133MHz
125MHz
100MHz
100MHz
Power
Organization
Interface
Package
Normal
4Banks x 16Mbits x 4
LVTTL
400mil 54pin TSOP II
Low power
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 1.1/Oct. 01
1

 
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