PEMD16; PUMD16
NPN/PNP resistor-equipped transistors;
R1 = 22 k, R2 = 47 k
Rev. 3 — 28 June 2011
Product data sheet
1. Product profile
1.1 General description
NPN/PNP resistor-equipped transistors.
Table 1.
Product overview
Package
NXP
PEMD16
PUMD16
SOT666
SOT363
JEITA
-
SC-88
PNP/PNP
complement
PEMB16
PUMB16
NPN/NPN
complement
PEMH16
PUMH16
Type number
1.2 Features and benefits
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place cost
1.3 Applications
Low current peripheral driver
Control of IC inputs
Replacement of general-purpose transistors in digital applications
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
O
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min
-
-
15.4
1.7
Typ
-
-
22
2.1
Max
50
100
28.6
2.6
Unit
V
mA
k
NXP Semiconductors
PEMD16; PUMD16
NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 47 k
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
1
2
3
001aab555
TR1
R2
R1
R1
R2
TR2
Simplified outline
6
5
4
Graphic symbol
6
5
4
1
2
3
006aaa143
3. Ordering information
Table 4.
Ordering information
Package
Name
PEMD16
PUMD16
-
SC-88
Description
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 6 leads
Version
SOT666
SOT363
Type number
4. Marking
Table 5.
PEMD16
PUMD16
[1]
* = placeholder for manufacturing site code
Marking codes
Marking code
[1]
5H
D1*
Type number
PEMD16_PUMD16
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 28 June 2011
2 of 11
NXP Semiconductors
PEMD16; PUMD16
NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 47 k
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
V
I
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage TR1
positive
negative
input voltage TR2
positive
negative
I
O
I
CM
P
tot
output current
peak collector current
total power dissipation
SOT363
SOT666
T
stg
T
j
T
amb
Per device
P
tot
total power dissipation
SOT363
SOT666
[1]
[2]
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
-
-
-
-
Max
50
50
5
+40
7
+7
40
100
100
200
200
+150
150
+150
Unit
V
V
V
V
V
V
V
mA
mA
mW
mW
C
C
C
Per transistor; for the PNP transistor with negative polarity
T
amb
25
C
[1]
[1][2]
-
-
65
-
65
storage temperature
junction temperature
ambient temperature
T
amb
25
C
[1]
[1][2]
-
-
300
300
mW
mW
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
PEMD16_PUMD16
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 28 June 2011
3 of 11
NXP Semiconductors
PEMD16; PUMD16
NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 47 k
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT363
SOT666
Per device
R
th(j-a)
thermal resistance from
junction to ambient
SOT363
SOT666
[1]
[2]
Conditions
in free air
[1]
[1][2]
Min
Typ
Max
Unit
Per transistor
-
-
-
-
625
625
K/W
K/W
in free air
[1]
[1][2]
-
-
-
-
416
416
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol Parameter
I
CBO
I
CEO
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage
on-state input voltage
bias resistor 1 (input)
bias resistor ratio
collector capacitance
TR1 (NPN)
TR2 (PNP)
V
CB
=
10
V;
I
E
= i
e
= 0 A; f = 1 MHz
-
-
-
-
2.5
3
pF
pF
Conditions
V
CB
= 50 V; I
E
= 0 A
V
CE
= 30 V; I
B
= 0 A
V
CE
= 30 V; I
B
= 0 A;
T
j
= 150
C
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V; I
C
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA
V
CE
= 5 V; I
C
= 100
A
V
CE
= 0.3 V; I
C
= 2 mA
Min
-
-
-
-
80
-
-
2
15.4
1.7
Typ
-
-
-
-
-
-
0.8
1.1
22
2.1
Max
100
1
50
120
-
150
0.5
-
28.6
2.6
mV
V
V
k
Unit
nA
A
A
A
Per transistor; for the PNP transistor with negative polarity
I
EBO
h
FE
V
CEsat
V
I(off)
V
I(on)
R1
R2/R1
C
c
PEMD16_PUMD16
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 28 June 2011
4 of 11
NXP Semiconductors
PEMD16; PUMD16
NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 47 k
10
3
h
FE
006aaa174
10
3
006aaa175
(1)
(2)
(3)
V
CEsat
(mV)
10
2
10
2
(2) (1)
10
(3)
1
10
−1
1
10
I
C
(mA)
10
2
10
1
10
I
C
(mA)
10
2
V
CE
= 5 V
(1) T
amb
= 100
C
(2) T
amb
= 25
C
(3) T
amb
=
40 C
I
C
/I
B
= 20
(1) T
amb
= 100
C
(2) T
amb
= 25
C
(3) T
amb
=
40 C
Fig 1.
TR1 (NPN): DC current gain as a function of
collector current; typical values
Fig 2.
TR1 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
10
006aaa177
10
006aaa176
V
I(on)
(V)
(1)
V
I(off)
(V)
(1)
1
(2)
(3)
1
(2)
(3)
10
−1
10
−1
1
10
I
C
(mA)
10
2
10
−1
10
−2
10
−1
1
I
C
(mA)
10
V
CE
= 0.3 V
(1) T
amb
=
40 C
(2) T
amb
= 25
C
(3) T
amb
= 100
C
V
CE
= 5 V
(1) T
amb
=
40 C
(2) T
amb
= 25
C
(3) T
amb
= 100
C
Fig 3.
TR1 (NPN): On-state input voltage as a
function of collector current; typical values
Fig 4.
TR1 (NPN): Off-state input voltage as a
function of collector current; typical values
PEMD16_PUMD16
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 28 June 2011
5 of 11
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